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Surface modification method for improving thermal conductivity of diamond/copper interface

A surface modification, diamond technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of poor interface microstructure characteristics, etc., to increase the interface area and interface adhesion, The effect of improving interface wettability and improving overall thermal conductivity

Active Publication Date: 2021-04-27
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

[0005] The above-mentioned existing technology for improving the thermal conductivity of the diamond / copper interface is mainly to form a sandwich interface structure of diamond / carbide layer / diamond by plating carbide-forming elements (W, Cr, etc.) on the diamond surface to eliminate the gap between diamond and copper. The non-wetting phenomenon between the diamonds can improve the thermal conductivity of the interface, and the effect of not paying attention to the microstructure of the interface of the diamond itself is not good.

Method used

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  • Surface modification method for improving thermal conductivity of diamond/copper interface
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  • Surface modification method for improving thermal conductivity of diamond/copper interface

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Embodiment 1

[0029] figure 1 It is the crystal phase electron microscope image of the obtained diamond / copper composite material, wherein b1 is a complete diamond particle, b2 is the 100 crystal plane of diamond, and b3 is the diamond 111 crystal plane; these two crystal planes are used in many experimental studies. The crystal planes have different reactivity, and in the contact process with copper, there will be different bonding strengths. The present invention selects a diamond sheet rich in diamond (100) planes, first uses argon ions to bombard its surface, and then magnetron sputtering Copper film is coated on its surface by means of radiation, so as to improve the thermal conductivity of the diamond / copper interface. The specific method is as follows:

[0030] (1) if figure 2 As shown, two very obvious strong diffraction peaks (400) and (111) can be seen, indicating that the purchased diamond substrate has good crystallinity. The reason why the (100) crystal plane is not observe...

Embodiment 2

[0043] The method is the same as that in Example 1, and the surface where the diamond (111) surface accounts for more than 50% of the area of ​​the entire surface to be treated is selected as the copper-plated film on the modified surface.

[0044] Such as Figure 7 As shown, the interface thermal conductivity of 100 and 111 diamond and copper film changes. When the interface is not modified, the interface thermal conductivity of 100 diamond and copper film is 55W / mk, and 111 is 48W / mk. 100 is greater than 111;

[0045] Through ion beam bombardment, the interface thermal conductivity of diamond and copper with two orientations of 100 and 111 is significantly improved. Among them, the interface thermal conductance of 100 is significantly greater than that of 111. When 100 diamond is bombarded for 20 minutes, the interface thermal conductance can reach 72W / mk, which is 31% higher than that of 111. After bombardment for 30 minutes, the interface thermal conductance is 62W / mk. mk...

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Abstract

The invention relates to a surface modification method for improving the thermal conductivity of a diamond / copper interface. The surface modification method comprises the following steps of: selecting a diamond sheet rich in diamond (100) surfaces, bombarding the surfaces of the diamond sheet by adopting argon ions, and plating a copper film on the surfaces of the diamond sheet in a magnetron sputtering manner. Compared with the prior art, the invention provides a low-cost and simple means for improving the thermal conductivity of the diamond / copper interface, so that the thermal conductivity of a diamond / copper composite material is improved, an intermediate layer structure does not need to be added, raw materials are saved, and process engineering is simplified.

Description

technical field [0001] The invention belongs to the technical field of diamond / copper composite materials, and relates to a surface modification method for improving the thermal conductivity of the diamond / copper interface. Background technique [0002] The functional requirements of various equipment in the fields of electronics, aerospace, military, industry, and medical treatment are getting higher and higher, and the power density of correlators (parts) is also increasing, which brings greater difficulty and difficulty to heat dissipation. higher challenge. Especially in the military and aerospace fields, devices with high power density or high assembly density emit a lot of heat when they work. If the heat is not dissipated in time, it will greatly increase the failure rate and failure rate of power devices. The next generation of heat dissipation materials---high thermal conductivity diamond / copper composite materials have broad application prospects in various field...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/18
CPCC23C14/35C23C14/022C23C14/185
Inventor 刘悦赵浩浩杨昆明范同祥
Owner SHANGHAI JIAO TONG UNIV
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