Two-component cleaning agent and preparation method and application thereof

Abstract

The invention provides a two-component cleaning agent and a preparation method and application thereof. The two-component cleaning agent comprises a component A and a component B, wherein based on the total mass of the component A being 100%, the component A comprises the following components: 1-3% of potassium hydroxide; 2-5% of a surfactant; 2-5% of a cosolvent; 1-3% of an organic base; 0.5-1% of sodium gluconate; 0.5-1% of an organic phosphate; and the balance of water. Based on the total mass of the component B being 100%, the component B comprises the following components: 3-18% of potassium hydroxide; 1-3% of a cosolvent; and the balance of water. The double-component cleaning agent provided by the invention has the cleaning capability equivalent to that of a commercially available cleaning agent, and has a relatively good removal effect on metal impurities.

Description

Technical field[0001]The invention belongs to the field of cleaning agents involving a two-component cleaning agent and a preparation method thereof, in particular, to a two-component silicon cleaning agent and a preparation method thereof.Background technique[0002]Diamond wire cutting crystal silicon is a new silicon film processing process developed in recent years. Compared with the cleaning of the sand, there is a significant cost advantage, mainly in the cutting capacity, small environmental pollution, and the loss of the sashimi of the sashimi, has developed into the mainstream slice process.[0003]Battery silicon wafers should be silver gray in front of which is not allowed to be laminated, black, oxidized, fingerprints, etc., and therefore, in the preparation process of highly efficient single crystal silicon solar cell wafer, you want to achieve high photoelectric conversion Efficiency, there must be a surface-cleaned silicon wafer, and surface metal pollution must be reduce...

AI Technical Summary

Problems solved by technology

CN101020866A discloses a solar silicon wafer cleaning agent, its components are by mass percentage, 10-30% sodium nitrilotriacetate complexing agent, 5-10% C 10 -C 13 Carbonyl isomer alcohol ethoxylate surfactant, 3-5% fatty alcohol alkoxylate surfactant, 0.05-2% hydroxide peroxide, 5-10% butyl glycol ether organic Solvent, 1-5% potassium hydroxide, the balance is deionized water or tap water; the cleaning agent provided by this patent does not contain toxic, harmful and polluting substances, but the removal effect of metal impurities is not good enough

CN107686779A discloses a semiconductor grinding disc cleaning agent and its preparation method, including 1-15% of surfactant, 3-5% of organic base, 2-10% of complexing agent, 3-10% of cosolvent and 60-80% of water %, the cleaning agent provided by this patent has simple operation and low cost for cleaning silicon wafers, but it still has the defect that the effect of removing metal impurities is not good

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