Method for in-situ preparation of 100-surface diamond through microwave plasma-magnetron sputtering composite vapor deposition and equipment thereof

A magnetron sputtering composite and microwave plasma technology, applied in sputtering plating, ion implantation plating, chemical instruments and methods, etc., can solve the problems of cumbersome dispersion, affecting the preparation speed of diamond films, and long time consumption, and achieve Simplify the preparation process, increase the preparation speed, and enhance the effect of consistency

Active Publication Date: 2021-05-28
SHENZHEN RES INST OF WUHAN UNIVERISTY
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Problems solved by technology

The pretreatment of the substrate surface and the formation of the transition layer are cumbersome and time-consuming, which seriously affects the preparation speed of the diamond film.

Method used

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  • Method for in-situ preparation of 100-surface diamond through microwave plasma-magnetron sputtering composite vapor deposition and equipment thereof
  • Method for in-situ preparation of 100-surface diamond through microwave plasma-magnetron sputtering composite vapor deposition and equipment thereof

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Embodiment Construction

[0035] In order to make the technical means, creative features, work flow, usage method, purpose and effect of the present invention easy to understand, the present invention will be further described below in conjunction with the accompanying drawings.

[0036] The microwave plasma-magnetron sputtering composite vapor deposition method designed by the present invention prepares 100 face diamonds in situ, comprising the following steps:

[0037] S1: Use a ground and polished single crystal silicon or potassium tantalate substrate, and use reactive or inert gas plasma to etch the surface inorganic substances and surface defects on the silicon substrate;

[0038] S2: Use magnetron sputtering to sputter a layer of 2um Ir buffer layer and form SP3 bond of carbon element to promote the growth of diamond film;

[0039] S3: Start diamond 100-face bias enhanced nucleation;

[0040] S4: start heteroepitaxial diamond growth.

[0041] Wherein, the specific process of step S1 is as foll...

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Abstract

The invention relates to a method for in-situ preparation of 100-face diamond through microwave plasma-magnetron sputtering composite vapor deposition.and equipment thereof. The method comprises the following steps: etching inorganic matters and surface defects on the upper surface of a silicon substrate by using a ground and polished monocrystalline silicon or potassium tantalate substrate and using reaction or inert gas plasma; then forming a 2-micron Ir buffer layer through magnetron sputtering, and forming SP3 bonds of the carbon element to promote growth of the diamond film; then, starting diamond 100-face bias pressure enhanced nucleation; and starting heteroepitaxial diamond growth. The diamond preparation efficiency and preparation quality are improved.

Description

technical field [0001] The invention belongs to the technical field of single crystal diamond growth, and in particular relates to a method and equipment for in-situ preparation of 100-face diamond by microwave plasma-magnetron sputtering composite vapor deposition. Background technique [0002] Diamond has superior physical, chemical and mechanical properties, and has extremely broad application prospects. The Mohs hardness of diamond is 10, the new Mohs hardness is 15, and the microhardness is 10000kg / mm2. The microhardness is 1000 times higher than that of quartz and 150 times higher than that of corundum. It is the hardest substance known to exist naturally. Excellent material for components. And because of its non-magnetic, poor electrical conductivity, lipophilic hydrophobicity and triboelectricity, it is mostly used in space technology and cutting-edge industries. It is precisely because diamonds have so many excellent properties, and natural diamonds are rare in na...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B25/10C30B25/18C23C14/16C23C14/18C23C14/35C23C14/02C23C16/27C23C16/511
CPCC30B29/04C30B25/105C30B25/183C23C14/165C23C14/185C23C14/35C23C14/022C23C16/274
Inventor 李辉申胜男刘胜于大洋张磊聂思媛杜晨宇王浩丞
Owner SHENZHEN RES INST OF WUHAN UNIVERISTY
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