Method for passivating perovskite thin film on surface by using multifunctional triphenylamine molecule

A triphenylamine and perovskite technology, applied in photovoltaic power generation, electrical components, electric solid devices, etc., can solve problems such as affecting the stability of PSCs PCE, affecting carrier transport, and reducing crystal quality.

Pending Publication Date: 2021-05-28
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
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Problems solved by technology

However, when the perovskite film is prepared by the solution method, there will be non-negligible defects at the grain boundary and interface.
The

Method used

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  • Method for passivating perovskite thin film on surface by using multifunctional triphenylamine molecule
  • Method for passivating perovskite thin film on surface by using multifunctional triphenylamine molecule
  • Method for passivating perovskite thin film on surface by using multifunctional triphenylamine molecule

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1. Preparation of Electron Transport Layer

[0024] Take 2 mL of deionized water and add 450 μL of SnO 2 solution (15% colloidal dispersion, water) and LiCl aqueous solution (4.25mg / mL) were stirred evenly, and it was spin-coated on a clean ITO glass surface. Sintered for 30 minutes to obtain SnO 2 electron transport layer.

[0025] 2. Preparation of perovskite layer

[0026] (1) Preparation of precursor solution: PbI 2 (559.6mg) was dissolved in 1mL DMF, heated and stirred at 70°C for 12 hours; FAI (60mg), MABr (6mg), MACl (6mg) were dissolved in 1mL isopropanol, stirred at room temperature for 1 hour;

[0027] (2) Put the hot PbI 2 spin-coated on SnO 2 On the surface of the electron transport layer, the rotation speed is 1500rpm / s, and the time is 30s. After the spin coating is completed, it is annealed on a hot stage at 70°C for 1 minute;

[0028] (3) When the temperature drops to room temperature, the FAI:MABr:MACl isopropanol solution is spin-coated on the P...

Embodiment 2

[0037] The modification steps of the second embodiment are basically the same as those of the first embodiment, except that the modification material is a TPA isopropanol solution with a concentration of 10 mM.

Embodiment 3

[0039] The modification steps of the third embodiment are basically the same as those of the first embodiment, except that the modification material is TPA-EABr isopropanol solution with a concentration of 10 mM.

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Abstract

The invention discloses a method for passivating a perovskite surface by using multifunctional triphenylamine molecules. N-(4-(N, N, N-triphenyl) phenethyl) ammonium bromide (TPA-PEABr) is used as a surface passivation molecule, so that the efficiency of perovskite solar cells (PSCs) can be improved to 18.15% from 16.69%, and the main reason is that the open-circuit voltage (Voc) after modification is improved to 1.09V from 1.02V. After the TPA-PEABr is introduced, the defect state density is reduced, and the orbital energy level of the TPA-PEABr is more matched with the energy level of a hole transport layer. In addition, due to the hydrophobicity of the TPA-PEABr, the stability of the PSCs passivated by the TPA-PEABr is greatly improved. Therefore, multifunctional TPA-PEABr molecules are inserted between a perovskite layer and a hole transport layer through a simple spin coating process, and PSCs with low defect density, more matched energy levels and better stability are obtained. The invention provides a new thought for designing the surface passivation molecules.

Description

technical field [0001] The invention relates to the field of development and utilization of perovskite solar cells, and specifically relates to a method for passivating the surface of perovskite through multifunctional triphenylamine molecules to improve the photoelectric conversion efficiency and stability of perovskite solar cells. Background technique [0002] The research on perovskite solar cells (PSCs) has achieved remarkable achievements in just ten years, and its photoelectric conversion efficiency (PCE) has exceeded 25%. This remarkable progress is due to the excellent optoelectronic properties of perovskite materials: excellent light absorption coefficient (≈10 5 cm -1 ), low exciton binding energy (<100m eV), long carrier diffusion length (>1μm), and a simple solution method for preparing PSCs. However, when the perovskite film is prepared by the solution method, there will be non-negligible defects at the grain boundary and interface. The existence of th...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46
CPCH10K85/00H10K30/10Y02E10/549
Inventor 李希友赵宝华闫新宇张腾
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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