Supercharge Your Innovation With Domain-Expert AI Agents!

High-ductility high-performance semiconductor conjugated polymer and preparation method thereof

A conjugated polymer and semiconductor technology, applied in the field of high-performance semiconductor conjugated polymer materials, high-performance semiconductor conjugated polymers and their preparation, can solve the problems of short side chains and inability to form elastic regions, and achieve improved tensile strength. The effect of extensibility, high guiding significance and good electrical properties

Active Publication Date: 2021-06-01
HEFEI UNIV OF TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Heptamethyltrisiloxane, which is more traditionally used, has a short side chain and cannot form a strainable elastic region

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-ductility high-performance semiconductor conjugated polymer and preparation method thereof
  • High-ductility high-performance semiconductor conjugated polymer and preparation method thereof
  • High-ductility high-performance semiconductor conjugated polymer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Example 1: Synthesis of Polymer PTDPPTT-C 6 -Si 5 (m=6, p1=4, the main chain structure is DPP-thiophene)

[0061] 1. If figure 1 Shown, the synthetic method of the organosiloxane group of part semiconductor conjugated polymer in the method for the present invention is: with hexamethylcyclotrisiloxane (0.25mol) and chlorodimethylsilyl hydrogen ( 0.25mol) as a raw material, with acetonitrile (40ml) as a solvent, DMF (2ml) as a catalyst, react at room temperature for 72h to obtain chlorooctamethylsilylhydrogen; Add methylsilylhydrogen (0.045mol) into dry toluene (40ml), ice-bath for 3-5min, add pyridine (5ml), dropwise within 1-2min, dissolve trimethylsilanol in toluene, gradually within 15min Add it dropwise into the reaction flask, react at room temperature for 2-3 hours, and distill under reduced pressure to obtain organosiloxane (1,1,1,3,3,5,5,7,7,9,9-undecamethylpentasilicone oxane).

[0062] 2. Join K 2 CO 3 , DPP, and 6-bromo-1-hexene into a single-port react...

Embodiment 2

[0067] Example 2: Synthesis of polymer PTDPPTT-C 6 -Si 7 (m=6, p1=6, the main chain structure is DPP-thiophene)

[0068] 1. If figure 1 As shown, take hexamethylcyclotrisiloxane (0.25mol) and chlorodimethylsilyl hydrogen (0.25mol) as raw materials, acetonitrile (40ml) as solvent, DMF (2ml) as catalyst, react at room temperature 72h, to obtain chlorooctamethylsilylhydrogen; under the conditions of ice bath and nitrogen gas flow, add chlorooctamethylsilylhydrogen (0.045mol) into dry toluene (40ml), ice bath for 3-5min, add pyridine (5ml), the dropwise addition is completed within 1-2min, dissolve hexamethylsilanol in toluene, gradually add dropwise into the reaction bottle within 15min, react at room temperature for 2-3h, and distill under reduced pressure to obtain the final organosiloxane group (1,1,1,3,3,5,5,7,7,9,9-pentadecamethylpentasiloxane).

[0069] 2. Join K 2 CO 3 , DPP, and 6-bromo-1-hexene into a single-port reaction flask, add an appropriate amount of DMF to ...

Embodiment 3

[0074] Embodiment 3: synthetic polymer PTDPPSe-C 7 -Si 5 (m=7, p2=2, the main chain structure is monoselenophene, and the main chain and side chain structures are adjusted to obtain the optimal combination).

[0075] Such as figure 2 Shown, the bromination synthetic method of thiophene DPP monomer in the present embodiment is as follows:

[0076] Add 0.38mmol of unbrominated DPP monomer into a 100ml reaction bottle, add 15ml of chloroform to dissolve, add 0.1g of free radical scavenger (Tempo), then dissolve NBS (0.8mmol) in chloroform, and add to the reaction dropwise In the bottle, the dropwise addition was completed within 20 minutes, the reaction bottle was moved to room temperature, and reacted overnight; the reacted product was extracted twice with water, dried by adding anhydrous magnesium sulfate, and filtered to obtain a purple-red oily brominated monomer; The product was subjected to silica gel chromatography, using petroleum ether / ethyl acetate (100:1) as the elue...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-ductility high-performance semiconductor conjugated polymer and a preparation method thereof. The semiconductor conjugated polymer is a semiconductor conjugated polymer based on an accurately adjusted alkyl straight chain and an adjustable organosiloxane group as a side chain R, the structural general formula of the semiconductor conjugated polymer is shown in the specification, and in the structural general formula, A is an electron-deficient acceptor unit, and D is an electron-rich donor unit. An alkyl straight chain and an organosiloxane chain as a side chain are introduced to construct an elastic buffer area, stress dissipation in the stretching process is achieved through a deformable amorphous area, charge transmission in the chains and between the chains is connected through a semi-crystalline aggregate junction coated with the organosiloxane side chain, a conjugated skeleton structure can be adjusted in diverse ways, and the semiconductor conjugated polymer material with high ductility and high charge transfer characteristic is obtained. The conjugated polymer material disclosed by the invention can be used as a hole type charge transport material and is applied to the fields of flexible transistor devices and other organic stretchable electronics.

Description

technical field [0001] The invention belongs to the field of organic semiconductor conjugated polymers, and in particular relates to a highly extensible high-performance semiconductor conjugated polymer and a preparation method thereof. High ductility for the purpose of high performance semiconducting conjugated polymer materials. Background technique [0002] The future prospects of wearable and implantable devices have led to an in-depth study of stretchable organic semiconductors. At present, the most studied conjugated polymers are donor-acceptor (D-A) conjugated polymers. The semiconductor material itself has a certain degree of ductility. The traditional semiconductor conjugated polymer films with alkyl side chains are electrically conductive after stretching. The performance is poor, and there are limited types of intrinsically stretchable conjugated polymer materials reported in the literature. Therefore, there is an urgent need to develop highly ductile, high-perf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C08G61/12
CPCC08G61/126C08G2261/144C08G2261/124C08G2261/414C08G2261/3223C08G2261/3243C08G2261/3241C08G2261/354C08G2261/512C08G2261/92Y02E10/549
Inventor 邱龙臻赵丰胜徐晨寅丁亚飞王晓鸿
Owner HEFEI UNIV OF TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com