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Method for wrapping copper powder with graphene

A technology for wrapping graphene and copper powder, applied in transportation and packaging, gaseous chemical plating, coating, etc., can solve problems such as unfavorable wrapping of graphene, loss of copper powder properties, affecting copper powder performance, etc., to improve anti-oxidation Improved performance, antioxidant capacity, high repeatability

Inactive Publication Date: 2021-06-04
姜达
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Compared with copper in other forms (such as copper foil, copper film, copper wire, etc.), copper powder has certain congenital defects. When copper powder gathers together, it is easy to sinter into copper block at high temperature and lose its unique copper powder. Properties, while the temperature required to grow graphene by CVD is higher, which is more likely to cause agglomeration of copper powder, which is not conducive to wrapping graphene and affecting the performance of copper powder

Method used

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  • Method for wrapping copper powder with graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] S1, put the mixed powder of copper powder and magnesium oxide powder in figure 1 In the U-shaped quartz tube shown (the mixed powder is in the tube of the storage part 42 under the action of gravity), the U-shaped quartz tube is placed in the center of the substrate holder in the middle of the heat-resistant tube; 300 SCCM Ar and 500 SCCM H 2 After 30 minutes of ventilation, start heating the furnace body 1, so that the temperature of the substrate support in the furnace body reaches 1000 ° C, and anneal at this temperature for 30 minutes;

[0048] S2. After annealing, feed 50 SCCM methane into the heat-resistant tube as the carbon source gas, and keep the heat-resistant tube at normal pressure 1 atm at the same time, and the reaction starts; stop feeding methane after 10 minutes of reaction, and continue feeding 300 SCCM Ar and 500 SCCM SCCM H 2 After the temperature in the furnace is slowly cooled (at a rate of about 1°C / s) to room temperature, the sample is taken out...

Embodiment 2

[0052] S1, put the mixed powder of copper powder and magnesium oxide powder in figure 1 In the U-shaped quartz tube shown, the U-shaped quartz tube is placed in the center of the substrate holder in the middle of the heat-resistant tube; the air in the heat-resistant tube is pumped out with a vacuum pump and 300 SCCM Ar and 500 SCCM H are introduced 2 After 30 minutes of ventilation, start to heat the furnace body 1, so that the temperature of the substrate support in the furnace body reaches 800 ° C, and anneal at this temperature for 60 minutes;

[0053] S2. After annealing, pass 50 SCCM acetylene into the heat-resistant tube as the carbon source gas, and keep the heat-resistant tube at normal pressure 1atm at the same time, and the reaction starts; stop feeding acetylene after 10 minutes of reaction, and continue to pass 300 SCCM Ar and 500 SCCM H 2 After the temperature in the furnace cools down (at a rate of about 5°C / s) to room temperature, take out the sample;

[0054...

Embodiment 3

[0057] S1, put the mixed powder of copper powder and magnesium oxide powder in figure 1 In the U-shaped quartz tube shown, the U-shaped quartz tube is placed in the center of the substrate holder in the middle of the heat-resistant tube; the air in the heat-resistant tube is pumped out with a vacuum pump and 300 SCCM Ar and 500 SCCM H are introduced 2 After 30 minutes of ventilation, start heating the furnace body 1, so that the temperature of the substrate support in the furnace body reaches 1000 ° C, and anneal at this temperature for 30 minutes;

[0058] S2. After annealing, feed 60 SCCM methane into the heat-resistant tube as a carbon source gas, and keep the heat-resistant tube at a low pressure of 0.1 Torr at the same time, and the reaction starts; stop feeding methane after 0.1 minutes of reaction, and continue feeding 300 SCCM Ar and 500 SCCM h 2 After the temperature in the furnace cools down (at a rate of about 100°C / s) to room temperature, take out the sample;

[...

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Abstract

The invention discloses a method for wrapping copper powder with graphene. The method for wrapping the copper powder with the graphene is characterized by comprising the following steps of S1, uniformly mixing the copper powder and magnesium oxide powder with different particle sizes, and annealing the obtained mixed powder at 500 to 1000 DEG C in the atmosphere of non-oxidizing gas and protective gas; S2, introducing carbon-containing gas into the mixed copper powder and magnesium oxide powder, and conducting reaction for 0.1 to 9999 min under 0.1 to 760 torr, so that the surface of the copper powder is reacted and wrapped with a graphene film; stopping introducing the carbon-containing gas, and cooling to room temperature; and S3, separating the copper powder wrapped with the graphene from the magnesium oxide powder, and obtaining the copper powder wrapped with the graphene. The method is simple and easy to implement and high in repeatability, and the oxidation resistance of the copper powder wrapped with the graphene is obviously enhanced.

Description

technical field [0001] The invention belongs to the technical field of copper powder performance improvement, and relates to a method for wrapping graphene on copper powder to enhance the oxidation resistance of copper powder. Background technique [0002] Copper powder is widely used in powder metallurgy, electric carbon products, electronic materials, metal coatings, chemical catalysts, filters, heat pipes and other electromechanical parts and electronic aviation fields. However, copper powder will be oxidized quickly in the air environment, called copper oxide or cuprous oxide, which greatly affects its application. Therefore, preventing the oxidation of copper powder is the premise to ensure its wide application. [0003] Graphene is made of sp 2 The hexagonal honeycomb two-dimensional inorganic crystal material composed of hybrid carbon atoms has only one carbon atom layer and the thickness is only 0.335nm. Graphene has the property of blocking the passage of almost ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/26B22F1/02B22F1/00
CPCC23C16/4417C23C16/26B22F1/142B22F1/16
Inventor 姜达
Owner 姜达
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