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Preparation method of Ho-doped Bi2S3 nano-film

A nano-film, 3.5H2O technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of short preparation cycle, mild reaction conditions, etc., achieve stable photoelectric performance, short cycle, and improve the effect of photoelectric performance

Active Publication Date: 2021-06-11
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation process is simple and stable, the process parameters are easier to control, the reaction conditions are mild, and the preparation cycle is relatively short. 2 S 3 Thin films have been improved, but have not yet been reported

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] (1) 0.0243g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.

[0015] (2) 0.0360g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.

[0016] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.

[0017] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 100°C for 100 minutes at a heating rate of 10°C / min, and then washed with deionized water for three times and dried, namely Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 / FTO), to be u...

Embodiment 2

[0021] (1) 0.0728g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.

[0022] (2) 0.1080g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.

[0023] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.

[0024] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 300°C for 200 minutes at a heating rate of 10°C / min, and then washed with deionized water for three times and dried, that is, Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 / FTO), to be...

Embodiment 3

[0028] (1) 0.0339g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.

[0029] (2) 0.0420g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.

[0030] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.

[0031] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 150°C for 170 minutes at a heating rate of 10°C / min, and then washed with deionized water for three times and dried, namely Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 / FTO), to be u...

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Abstract

The invention discloses a preparation method of Ho-doped Bi2S3 nano-film. The preparation method comprises the following steps: soaking FTO in a glacial acetic acid solution containing Bi(NO3)<3>.5H2O and a methanol solution containing Na2S.9H2O respectively, taking out the FTO and drying each time, repeating the steps for three times, and annealing to obtain Bi2S3 / FTO; putting a reaction solution which is formed by mixing three substances, namely Bi(NO3)<3>.5H2O, Ho(NO3)<3>.6H2O and Na2S2O<3>.5H2O, and the pH value of which is adjusted to 4.8 with NaOH, into a high-pressure reaction kettle; inserting the Bi2S3 / FTO, and reacting in a drying oven to obtain pure Bi2S3 and Ho-doped Bi2S3(Ho-Bi2S3) nano-film of which the photovoltage value is 0.0747-0.2650 V. The method has low requirements on raw materials and instruments, the process is simple, the period is short, and the photoelectric property stability of the product is good.

Description

technical field [0001] The present invention relates to a kind of Ho-doped Bi 2 S 3 Preparation method of nano film. [0002] technical background [0003] Bismuth sulfide (Bi 2 S 3 ) is a direct semiconductor with a forbidden band width of 1.3eV~1.7eV. -1 It has a high absorption coefficient in the range, can absorb most of the visible light within 800nm ​​and transfer electrons, and can directly utilize sunlight. It has important development prospects in the fields of solar energy materials, photoelectric conversion materials, photocatalytic degradation materials and photolysis hydrogen production. . Bi 2 S 3 Due to its narrow band gap, holes and electrons are easily recombined and the carrier lifetime is low, resulting in low photoelectric conversion efficiency and quantum conversion efficiency, which greatly restricts the application. To improve Bi 2 S 3 Many researchers suppress the recombination of photogenerated charges and promote the transfer of photogenera...

Claims

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Application Information

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IPC IPC(8): C03C17/34H01L31/032
CPCC03C17/347H01L31/0321
Inventor 周威钟福新劳昌玲王家钰黎燕莫德清
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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