Preparation method of Ho-doped Bi2S3 nano-film

A nano-film, 3.5H2O technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of short preparation cycle, mild reaction conditions, etc., achieve stable photoelectric performance, short cycle, and improve the effect of photoelectric performance

Active Publication Date: 2021-06-11
GUILIN UNIVERSITY OF TECHNOLOGY
10 Cites 0 Cited by

AI-Extracted Technical Summary

Problems solved by technology

The preparation process is simple and stable, the process parameters are easier to control, the reaction conditions are m...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Abstract

The invention discloses a preparation method of Ho-doped Bi2S3 nano-film. The preparation method comprises the following steps: soaking FTO in a glacial acetic acid solution containing Bi(NO3)<3>.5H2O and a methanol solution containing Na2S.9H2O respectively, taking out the FTO and drying each time, repeating the steps for three times, and annealing to obtain Bi2S3/FTO; putting a reaction solution which is formed by mixing three substances, namely Bi(NO3)<3>.5H2O, Ho(NO3)<3>.6H2O and Na2S2O<3>.5H2O, and the pH value of which is adjusted to 4.8 with NaOH, into a high-pressure reaction kettle; inserting the Bi2S3/FTO, and reacting in a drying oven to obtain pure Bi2S3 and Ho-doped Bi2S3(Ho-Bi2S3) nano-film of which the photovoltage value is 0.0747-0.2650 V. The method has low requirements on raw materials and instruments, the process is simple, the period is short, and the photoelectric property stability of the product is good.

Application Domain

Semiconductor devices

Technology Topic

Thin membraneMethanol +6

Examples

  • Experimental program(8)

Example Embodiment

[0013] Example 1:
[0014] (1) 0.0243g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.
[0015] (2) 0.0360g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.
[0016] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.
[0017] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 100°C for 100 minutes at a heating rate of 10°C/min, and then washed with deionized water for three times and dried, namely Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 /FTO), to be used.
[0018] (5) Weigh 0.0485g Bi (NO 3 ) 3 ·5H 2 O was sonicated in 15 mL of deionized water for 5 minutes, and then 0.0744 g of Na was weighed 2 S 2 O 3 ·5H 2 O was dissolved in the above solution; the pH of the solution was adjusted to 4.8 using a 1 mol/L NaOH solution, and the volume was adjusted to 20 mL, and then poured into the reaction kettle.
[0019] (6) by step (4) gained Bi 2 S 3 /FTO is placed in the reaction kettle of step (5), the conductive surface is facing down, the reaction kettle is placed in a 120 ° C oven for 4 hours, cooled, and the Bi 2 S 3 /FTO and washed three times with an aqueous ethanol solution with a concentration of 50% by mass, dried with nitrogen, and then placed in a muffle furnace. At a heating rate of 5°C/min at 150°C, the temperature was maintained for 90 minutes to obtain Bi with a photovoltage value of 0.0747V. 2 S 3 nanofilm.

Example Embodiment

[0020] Example 2:
[0021] (1) 0.0728g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.
[0022] (2) 0.1080g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.
[0023] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.
[0024] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 300°C for 200 minutes at a heating rate of 10°C/min, and then washed with deionized water for three times and dried, that is, Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 /FTO), to be used.
[0025] (5) Weigh 0.9700g Bi(NO 3 ) 3·5H 2 O was sonicated in 15 mL of deionized water for 5 minutes, and then 1.4890 g of Na was weighed 2 S 2 O 3 ·5H 2 O was dissolved in the above solution; the pH of the solution was adjusted to 4.8 using a 1 mol/L NaOH solution, and the volume was adjusted to 20 mL, and then poured into the reaction kettle.
[0026] (6) by step (4) gained Bi 2 S 3 /FTO is placed in the reaction kettle of step (5), the conductive surface is facing down, the reaction kettle is placed in a 200 ℃ oven for 12 hours, cooled, and the Bi 2 S 3 /FTO and washed three times with an ethanol aqueous solution with a concentration of 50% by mass, dried with nitrogen, and put into a muffle furnace. The temperature was heated at a rate of 5°C/min at 350°C and kept for 210 minutes to obtain Bi with a photovoltage value of 0.0982V. 2 S 3 nanofilm.

Example Embodiment

[0027] Example 3:
[0028] (1) 0.0339g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.
[0029] (2) 0.0420g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.
[0030] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.
[0031] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 150°C for 170 minutes at a heating rate of 10°C/min, and then washed with deionized water for three times and dried, namely Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 /FTO), to be used.
[0032] (5) Weigh 0.1213g Bi (NO 3 ) 3 ·5H 2 O was sonicated in 15 mL of deionized water for 5 minutes, and then weighed 0.1801 g of Na 2 S 2 O 3 ·5H 2 O was dissolved in the above solution; the pH of the solution was adjusted to 4.8 using a 1 mol/L NaOH solution, and the volume was adjusted to 20 mL, and then poured into the reaction kettle.
[0033] (6) by step (4) gained Bi 2 S 3 /FTO is placed in the reaction kettle of step (5), the conductive surface is facing down, the reaction kettle is placed in a 150 ° C oven for 5 hours, cooled, and the Bi 2 S 3 /FTO and washed three times with an ethanol aqueous solution with a concentration of 50% by mass, dried with nitrogen, and then placed in a muffle furnace. At a heating rate of 5°C/min at 200°C, the temperature was maintained for 120 minutes to obtain Bi with a photovoltage value of 0.1119V. 2 S 3 nanofilm.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

no PUM

Description & Claims & Application Information

We can also present the details of the Description, Claims and Application information to help users get a comprehensive understanding of the technical details of the patent, such as background art, summary of invention, brief description of drawings, description of embodiments, and other original content. On the other hand, users can also determine the specific scope of protection of the technology through the list of claims; as well as understand the changes in the life cycle of the technology with the presentation of the patent timeline. Login to view more.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Similar technology patents

Mn-doped CISe-ZnSe core-shell structure quantum dot as well as preparation method and application of Mn-doped CISe-ZnSe core-shell structure quantum dot

PendingCN114561214AImprove stabilityImprove photoelectric performanceLight-sensitive devicesLuminescent compositionsPhotoelectrochemical cellQuantum dot
Owner:YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE HUZHOU

Photodiode matrix with isolated cathodes

InactiveUS20180254300A1High quantum yieldImprove photoelectric performanceSolid-state devicesDiodeIndium phosphideAnode
Owner:NEW IMAGING TECH

Preparation method of BVO/CN/Co photo-anode sensor

ActiveCN113740399AImprove photoelectric performanceReduce surface stateMaterial analysis by electric/magnetic meansColor/spectral properties measurementsBismuth vanadateMaterials science
Owner:XIDIAN UNIV

Heterocyclic organic electroluminescent material with chrysene as center structure, and preparation method and application thereof

InactiveCN109897626ANot easy to crystallizeImprove photoelectric performanceOrganic chemistrySolid-state devicesOrganic electroluminescenceChemistry
Owner:VALIANT CO LTD

Organic material and application thereof in OLED device

ActiveCN112961142AImprove photoelectric performanceHigh triplet energy levelOrganic chemistrySolid-state devicesPhysicsOrganic electroluminescence
Owner:北京燕化集联光电技术有限公司

Classification and recommendation of technical efficacy words

  • Raw materials and equipment requirements are not high
  • Improve photoelectric performance

Method for preparing Cu2O nanofilm by hydrothermal method

ActiveCN108374167AGood photoelectric performanceRaw materials and equipment requirements are not highNanotechnologyMetallic material coating processesNanometreEthanol
Owner:GUILIN UNIVERSITY OF TECHNOLOGY

Preparation method for epitaxial wafer of GaN-based light emitting diode

ActiveCN106057988AImprove growth qualityImprove photoelectric performanceSemiconductor devicesLattice mismatchMultiple stress
Owner:HC SEMITEK SUZHOU

Beta-Gallium oxide nanowire array film and preparation method thereof

InactiveCN105826433AImprove photoelectric performanceSimple preparation processMaterial nanotechnologyFinal product manufactureMetalSpin coating
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2023 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap