Preparation method of Ho-doped Bi2S3 nano-film
A nano-film, 3.5H2O technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of short preparation cycle, mild reaction conditions, etc., achieve stable photoelectric performance, short cycle, and improve the effect of photoelectric performance
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Embodiment 1
[0014] (1) 0.0243g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.
[0015] (2) 0.0360g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.
[0016] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.
[0017] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 100°C for 100 minutes at a heating rate of 10°C / min, and then washed with deionized water for three times and dried, namely Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 / FTO), to be u...
Embodiment 2
[0021] (1) 0.0728g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.
[0022] (2) 0.1080g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.
[0023] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.
[0024] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 300°C for 200 minutes at a heating rate of 10°C / min, and then washed with deionized water for three times and dried, that is, Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 / FTO), to be...
Embodiment 3
[0028] (1) 0.0339g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.
[0029] (2) 0.0420g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.
[0030] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.
[0031] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 150°C for 170 minutes at a heating rate of 10°C / min, and then washed with deionized water for three times and dried, namely Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 / FTO), to be u...
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