Preparation method of Ho-doped Bi2S3 nano-film
A nano-film, 3.5H2O technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of short preparation cycle, mild reaction conditions, etc., achieve stable photoelectric performance, short cycle, and improve the effect of photoelectric performance
Active Publication Date: 2021-06-11
GUILIN UNIVERSITY OF TECHNOLOGY
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The invention discloses a preparation method of Ho-doped Bi2S3 nano-film. The preparation method comprises the following steps: soaking FTO in a glacial acetic acid solution containing Bi(NO3)<3>.5H2O and a methanol solution containing Na2S.9H2O respectively, taking out the FTO and drying each time, repeating the steps for three times, and annealing to obtain Bi2S3/FTO; putting a reaction solution which is formed by mixing three substances, namely Bi(NO3)<3>.5H2O, Ho(NO3)<3>.6H2O and Na2S2O<3>.5H2O, and the pH value of which is adjusted to 4.8 with NaOH, into a high-pressure reaction kettle; inserting the Bi2S3/FTO, and reacting in a drying oven to obtain pure Bi2S3 and Ho-doped Bi2S3(Ho-Bi2S3) nano-film of which the photovoltage value is 0.0747-0.2650 V. The method has low requirements on raw materials and instruments, the process is simple, the period is short, and the photoelectric property stability of the product is good.
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