Preparation method of Ho-doped Bi2S3 nano-film

A nano-film, 3.5H2O technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of short preparation cycle, mild reaction conditions, etc., achieve stable photoelectric performance, short cycle, and improve the effect of photoelectric performance

Active Publication Date: 2021-06-11
GUILIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

The preparation process is simple and stable, the process parameters are easier to control, the reaction conditions are m...
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Abstract

The invention discloses a preparation method of Ho-doped Bi2S3 nano-film. The preparation method comprises the following steps: soaking FTO in a glacial acetic acid solution containing Bi(NO3)<3>.5H2O and a methanol solution containing Na2S.9H2O respectively, taking out the FTO and drying each time, repeating the steps for three times, and annealing to obtain Bi2S3/FTO; putting a reaction solution which is formed by mixing three substances, namely Bi(NO3)<3>.5H2O, Ho(NO3)<3>.6H2O and Na2S2O<3>.5H2O, and the pH value of which is adjusted to 4.8 with NaOH, into a high-pressure reaction kettle; inserting the Bi2S3/FTO, and reacting in a drying oven to obtain pure Bi2S3 and Ho-doped Bi2S3(Ho-Bi2S3) nano-film of which the photovoltage value is 0.0747-0.2650 V. The method has low requirements on raw materials and instruments, the process is simple, the period is short, and the photoelectric property stability of the product is good.

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Technology Topic

Examples

  • Experimental program(8)

Example Embodiment

[0013] Example 1:
[0014] (1) 0.0243g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.
[0015] (2) 0.0360g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.
[0016] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.
[0017] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 100°C for 100 minutes at a heating rate of 10°C/min, and then washed with deionized water for three times and dried, namely Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 /FTO), to be used.
[0018] (5) Weigh 0.0485g Bi (NO 3 ) 3 ·5H 2 O was sonicated in 15 mL of deionized water for 5 minutes, and then 0.0744 g of Na was weighed 2 S 2 O 3 ·5H 2 O was dissolved in the above solution; the pH of the solution was adjusted to 4.8 using a 1 mol/L NaOH solution, and the volume was adjusted to 20 mL, and then poured into the reaction kettle.
[0019] (6) by step (4) gained Bi 2 S 3 /FTO is placed in the reaction kettle of step (5), the conductive surface is facing down, the reaction kettle is placed in a 120 ° C oven for 4 hours, cooled, and the Bi 2 S 3 /FTO and washed three times with an aqueous ethanol solution with a concentration of 50% by mass, dried with nitrogen, and then placed in a muffle furnace. At a heating rate of 5°C/min at 150°C, the temperature was maintained for 90 minutes to obtain Bi with a photovoltage value of 0.0747V. 2 S 3 nanofilm.

Example Embodiment

[0020] Example 2:
[0021] (1) 0.0728g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.
[0022] (2) 0.1080g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.
[0023] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.
[0024] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 300°C for 200 minutes at a heating rate of 10°C/min, and then washed with deionized water for three times and dried, that is, Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 /FTO), to be used.
[0025] (5) Weigh 0.9700g Bi(NO 3 ) 3·5H 2 O was sonicated in 15 mL of deionized water for 5 minutes, and then 1.4890 g of Na was weighed 2 S 2 O 3 ·5H 2 O was dissolved in the above solution; the pH of the solution was adjusted to 4.8 using a 1 mol/L NaOH solution, and the volume was adjusted to 20 mL, and then poured into the reaction kettle.
[0026] (6) by step (4) gained Bi 2 S 3 /FTO is placed in the reaction kettle of step (5), the conductive surface is facing down, the reaction kettle is placed in a 200 ℃ oven for 12 hours, cooled, and the Bi 2 S 3 /FTO and washed three times with an ethanol aqueous solution with a concentration of 50% by mass, dried with nitrogen, and put into a muffle furnace. The temperature was heated at a rate of 5°C/min at 350°C and kept for 210 minutes to obtain Bi with a photovoltage value of 0.0982V. 2 S 3 nanofilm.

Example Embodiment

[0027] Example 3:
[0028] (1) 0.0339g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 10 mL of analytical grade glacial acetic acid to obtain A solution.
[0029] (2) 0.0420g Na 2 S·9H 2 O was dissolved in 10 mL of anhydrous methanol to obtain B solution.
[0030] (3) Put the FTO cut piece vertically into the solution A obtained in step (1) and soak it for 30 seconds, absorb the bottom water droplets with filter paper, put it upright in a 50°C oven to dry for 2 minutes, take it out and cool it and put it into step (2) ) Soaked in the obtained B solution for 30 seconds, absorbed the bottom water droplets with filter paper, and placed it upright in a 50° C. oven to dry for 2 minutes.
[0031] (4) After the process of step (3) is repeated three times, the treated FTO pieces are put into a muffle furnace and annealed at 150°C for 170 minutes at a heating rate of 10°C/min, and then washed with deionized water for three times and dried, namely Bi can be grown on FTO 2 S 3 Seed (Bi 2 S 3 /FTO), to be used.
[0032] (5) Weigh 0.1213g Bi (NO 3 ) 3 ·5H 2 O was sonicated in 15 mL of deionized water for 5 minutes, and then weighed 0.1801 g of Na 2 S 2 O 3 ·5H 2 O was dissolved in the above solution; the pH of the solution was adjusted to 4.8 using a 1 mol/L NaOH solution, and the volume was adjusted to 20 mL, and then poured into the reaction kettle.
[0033] (6) by step (4) gained Bi 2 S 3 /FTO is placed in the reaction kettle of step (5), the conductive surface is facing down, the reaction kettle is placed in a 150 ° C oven for 5 hours, cooled, and the Bi 2 S 3 /FTO and washed three times with an ethanol aqueous solution with a concentration of 50% by mass, dried with nitrogen, and then placed in a muffle furnace. At a heating rate of 5°C/min at 200°C, the temperature was maintained for 120 minutes to obtain Bi with a photovoltage value of 0.1119V. 2 S 3 nanofilm.
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