a cr 3 Al/zr multilayer film and its preparation method

A multi-layer thin film and oxide film technology, which is applied in coating, metal material coating process, vacuum evaporation plating, etc., can solve the problems of lack of control process of interface structure, etc., and achieve less defects, faster deposition rate, better adhesion strong effect

Active Publication Date: 2021-12-28
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is currently a lack of systematic theoretical guidance on the regulation process of the interface structure, so it is necessary to study a preparation method of nano-multilayer films with different interface structures to fill the gap in this regard

Method used

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  • a cr <sub>3</sub> Al/zr multilayer film and its preparation method
  • a cr <sub>3</sub> Al/zr multilayer film and its preparation method
  • a cr <sub>3</sub> Al/zr multilayer film and its preparation method

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preparation example Construction

[0037] Above Cr 3 The preparation method of Al / Zr multilayer thin film, comprises the following steps:

[0038] Step 1), the polished silicon substrate is ultrasonically cleaned in acetone and absolute ethanol in sequence, and then dried, and the dried silicon substrate is eroded by hydrofluoric acid aqueous solution to remove the oxide film on its surface;

[0039] Specifically, the silicon substrate is polished on one side, then soaked in acetone and absolute ethanol successively, ultrasonically cleaned for at least 15 minutes, and then dried. Afterwards, the treated silicon substrate is soaked in a hydrofluoric acid aqueous solution with a concentration of 45 wt.%, corroded for about 1 min, and then dried.

[0040] Fix the silicon substrate on the substrate with conductive glue, and send it into the coating chamber, and pump the vacuum to 1.0×10 -4 Below Pa.

[0041] Step 2), in the high vacuum environment, at first utilize Ar + Ion etching to further remove impurities ...

Embodiment 1

[0046] Present embodiment 1 is implemented under the following implementation conditions and technical requirements:

[0047] First, acetone and absolute ethanol are used to remove impurities on the surface of the target and the substrate in sequence, and then the impurities and oxides on the surface of the target and the substrate are removed by hydrofluoric acid aqueous solution.

[0048] Then, use conductive glue to fix the substrate on the substrate, and mechanically and automatically send it into the magnetron sputtering vacuum coating chamber, and pump it until the vacuum degree of the back is 1.6×10 -4 Pa starts etching, the etching power is 200W, and the etching time is 5min.

[0049] Secondly, after the etching is completed, the formal sputtering starts: firstly, the argon gas is injected for 30s, and the pre-sputtering is performed for 10s, and then the Cr 3 Al / Zr multilayer film;

[0050] Among them, Cr 3 The power of Al target (purity 99.99wt.%) and Zr target (p...

Embodiment 2

[0054] This embodiment 2 is implemented under the following implementation conditions and technical requirements:

[0055] First, acetone and absolute ethanol are used to remove impurities on the surface of the target and the substrate in sequence, and then the impurities and oxides on the surface of the target and the substrate are removed by hydrofluoric acid aqueous solution.

[0056] Then, use conductive glue to fix the substrate on the substrate, and mechanically and automatically send it into the magnetron sputtering vacuum coating chamber, and pump it until the vacuum degree of the back is 2.4×10 -4 Pa starts etching, the etching power is 200W, and the etching time is 5min.

[0057] Secondly, after the etching is completed, the formal sputtering starts: firstly, the argon gas is injected for 30s, and the pre-sputtering is performed for 10s, and then the Cr 3 Al / Zr multilayer films, where Cr 3 The power of the Al target (purity 99.99wt.%) and the Zr target (purity 99.9...

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Abstract

The invention discloses a Cr 3 Al / Zr multilayer film and preparation method thereof, depositing Cr on clean silicon substrate by magnetron sputtering deposition method 3 Al / Zr multilayer films via Ar + Ions bombard the target (cathode) and sample (Cr 3 Al / Zr) atoms undergo elastic collisions, further generating a collision cascade, whereby the sample atoms are excited and reversely deposited onto the substrate. Cr 3 Al atoms and Zr atoms are deposited sequentially, alternately forming multi-layer films with different modulation periods and different interface structures, and high-density plasmas such as secondary electrons generated by sputtering are in the form of cycloids under the joint action of mutually perpendicular electromagnetic fields. Cyclic movement without contact with the substrate. Therefore, the ionization efficiency is high and the deposition rate is fast. The invention not only successfully prepares nanometer multilayer films with different interface structures, but also has uniform and dense films, clear interface structures and excellent comprehensive properties.

Description

technical field [0001] The invention belongs to the field of surface modification of materials, in particular to a Cr 3 Al / Zr multilayer film and its preparation method. Background technique [0002] Nano-multilayer films are a special kind of structural composite materials, which are composed of alternating nano-layers of different materials, and their properties depend on the properties of single layers, layer thicknesses, and interface structures between layers. Compared with single-layer films, nano-multilayer films have higher strength, ductility, and fracture toughness, and at the same time have special physical and chemical properties, such as radiation resistance, thermal stability, and electromagnetic properties, and are widely used in accident tolerance. Fuel system, MEMS, etc. have attracted extensive attention in the field of materials science and engineering. [0003] As one of the determinants of the properties of nanoscale multilayer films, the interface str...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/35C23C14/02
CPCC23C14/165C23C14/352C23C14/021
Inventor 张金钰安邦王亚强吴凯刘刚孙军
Owner XI AN JIAOTONG UNIV
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