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Heterojunction solar cell and manufacturing method thereof

A solar cell and heterojunction technology, applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency and high cost of stacked cells, and achieve the goal of improving photoelectric conversion efficiency, excellent bipolar carrier transport characteristics, and improving collection efficiency Effect

Pending Publication Date: 2021-06-22
BEIJING JIAOTONG UNIV
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Problems solved by technology

[0004] However, the disadvantage of stacked cells is that the cost is high, and there is also the problem of low photoelectric conversion efficiency.

Method used

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  • Heterojunction solar cell and manufacturing method thereof
  • Heterojunction solar cell and manufacturing method thereof

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Embodiment Construction

[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] The invention provides a heterojunction solar cell, see figure 1 , the heterojunction solar cell specifically includes:

[0031] From top to bottom are: transparent front electrode, electron transport layer, perovskite layer, copper indium gallium selenide layer, molybdenum electrode layer and battery substrate.

[0032] In this embo...

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Abstract

The invention provides a heterojunction solar cell and a manufacturing method thereof. The heterojunction solar cell sequentially comprises a transparent front electrode, an electron transport layer, a perovskite layer, a copper indium gallium selenium layer, a molybdenum electrode layer and a cell substrate from top to bottom. The manufacturing method comprises the following steps: preparing the molybdenum electrode layer on the cell substrate by adopting a direct current magnetron sputtering method; depositing a copper-indium-gallium-selenium layer on the molybdenum electrode layer by adopting a three-step co-evaporation method; after the copper indium gallium selenium layer is spin-coated with the mixed solvent in a spin-coating mode, conducting heating for 10 min to 60 min under the condition of 80 DEG C to 150 DEG C, and obtaining a perovskite layer; preparing a zinc oxide layer on the perovskite layer by adopting a direct current magnetron sputtering method, wherein the zinc oxide layer is an electron transport layer; and preparing the AZO layer on the electron transport layer by adopting a direct-current magnetron sputtering method, wherein the AZO layer is a transparent front electrode. According to the invention, the electron collection efficiency can be improved, and the photoelectric conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a heterojunction solar cell and a manufacturing method thereof. Background technique [0002] Solar cells are components that directly convert light energy into electrical energy. Since the range of solar radiation spectrum (0-4eV) is very wide, according to the principle of photovoltaic effect, a single-junction solar cell composed of a single semiconductor material can only convert solar radiation spectrum Part of the light energy is converted into electrical energy, the effective utilization rate of solar energy is low, and the output voltage is low. At present, solar cell materials with different band gaps are matched with the energy width of sunlight to form an optical series structure, and multi-junction solar cells are constructed, and each junction in the cell is used to fully absorb photons in the solar spectrum band that matches its forbidden band width, so as to re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/48
CPCH10K71/00H10K71/12H10K85/30H10K30/10H10K2102/00Y02E10/549
Inventor 宋丹丹朱成皖刘武徐征赵谡玲乔泊
Owner BEIJING JIAOTONG UNIV