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Preparation method of quantum dot ink and quantum dot film

A technology of quantum dots and quantum dot materials, which can be used in the preparation of quantum dot films and the field of quantum dot inks, which can solve problems to be improved, etc.

Pending Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the current preparation methods of quantum dot inks and quantum dot films still need to be improved.

Method used

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  • Preparation method of quantum dot ink and quantum dot film
  • Preparation method of quantum dot ink and quantum dot film
  • Preparation method of quantum dot ink and quantum dot film

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preparation example Construction

[0056] Correspondingly, as attached image 3 As shown, the embodiment of the present invention also provides a method for preparing a quantum dot film, including the following steps: providing a substrate; depositing the above-mentioned quantum dot ink on the substrate, and then performing drying treatment to obtain the quantum dot film .

[0057] The preparation method of the quantum dot film provided in the embodiment of the present invention is obtained by depositing the above-mentioned quantum dot ink on the substrate, and then performing drying treatment. Because the above-mentioned quantum dot ink has the characteristics of good dispersion stability of quantum dot materials, suitable viscosity, surface tension and boiling point, after the quantum dot ink is deposited, a quantum dot film with a pixel lattice is formed, and the quantum dot film can be used as a quantum dot light-emitting diode. Quantum dot luminescent layer. The uniformity of the film layer of the quantu...

Embodiment 1

[0074] A quantum dot ink and a quantum dot luminescent layer, comprising the steps of:

[0075] ① While stirring, add 10wt% oleylamine-stabilized red CdSe / ZnS quantum dots, 60wt% decahydronaphthalene solvent with a purity greater than 99.9%, and 30wt% cresyl glycidyl ether with a purity greater than 99.9% to 500mL In a single-necked flask, stir for 30 minutes to obtain a quantum dot ink.

[0076] ②Use an inkjet printer to print a red quantum dot layer with a size of 20×30um and a resolution of 200×200ppi.

[0077] ③Heat to 155°C on a hot plate, vacuum 1×10 -4 Volatilize and dry under Torr for 30 minutes to obtain a monochromatic quantum dot light-emitting layer.

Embodiment 2

[0079] A quantum dot ink and a quantum dot luminescent layer, comprising the steps of:

[0080] 1. Under stirring, green CdZnSe / CdZnS quantum dots stabilized by 10wt% oleylamine, 50wt% hexadecane with a purity greater than 99.9%, 40wt% p-sec-butylphenol glycidyl ether with a purity greater than 99.9%, Add it into a 500mL one-necked flask, and stir for 30 minutes to obtain a quantum dot ink.

[0081] ②Use an inkjet printer to print a green quantum dot layer with a size of 20×30um and a resolution of 200×200ppi.

[0082] ③Heating to 180°C on a hot plate, volatilizing and drying under nitrogen flow for 30 minutes to obtain a monochromatic quantum dot light-emitting layer.

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Abstract

The invention belongs to the technical field of quantum dots, and particularly relates to quantum dot ink, which comprises at least one quantum dot material and at least one phenyl glycidyl ether organic solvent, and the structural general formula of the phenyl glycidyl ether organic solvent is shown in the following formula I, and R is selected from at least one of hydrogen, substituted or unsubstituted alkyl and substituted or unsubstituted cycloalkyl. The quantum dot material in the quantum dot ink has proper viscosity, surface tension, dispersion stability and volatility, can meet the technology of ink-jet printing and the like, is good in film forming uniformity and free of solvent residues, can be deposited to form a quantum dot light-emitting layer with a pixel dot matrix, high resolution and electro-excitation, and is compact in quantum dot arrangement, the charge transfer efficiency between quantum dot materials is improved, the threshold voltage is reduced, and the energy efficiency is improved, so that the overall photoelectric property of the quantum dot light-emitting diode prepared from the quantum dot ink is improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, in particular to a preparation method of quantum dot ink and quantum dot film. Background technique [0002] In recent years, quantum dot (QD) luminescent materials have played a great role in LED lighting, liquid crystal display and other fields. Quantum dots replace traditional phosphors, effectively improving the color gamut of LED and liquid crystal display. Recently, quantum dot light-emitting diodes (QLEDs), which use quantum dot luminescent materials as the light-emitting layer, have broad application prospects in the fields of solid-state lighting and flat panel display, and have attracted extensive attention from academia and industry. [0003] The solution processing characteristics of quantum dots make the quantum dot light-emitting layer can be prepared by various methods such as spin coating, scraping coating, spraying, inkjet printing, pad printing and so on. Compared with spi...

Claims

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Application Information

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IPC IPC(8): C09D11/36C09D11/38
CPCC09D11/36C09D11/38
Inventor 李雪
Owner TCL CORPORATION