NbMoTaWAl refractory high-entropy alloy film and preparation method thereof

A technology of high-entropy alloy and thin film, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems that the mechanical properties cannot meet the requirements of use, and achieve the improvement of mechanical properties and oxidation resistance, and compact structure Effect

Pending Publication Date: 2021-07-23
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the mechanical properties of high-entropy alloys have obvious advantages over general materials, their mechanical properties still cannot meet the requirements of use under some specific conditions of use. Therefore, it is necessary to further improve the mechanical properties of high-entropy alloys.

Method used

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  • NbMoTaWAl refractory high-entropy alloy film and preparation method thereof

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preparation example Construction

[0031] The present invention also provides a method for preparing a NbMoTaWAl refractory high-entropy alloy film, comprising the following steps:

[0032] Step 1: Take the monocrystalline silicon substrate polished on one side, ultrasonically clean it in acetone and ethanol for 10 minutes, and then dry it to ensure that the surface of the substrate is clean and free of stains and dust. The surface roughness of the monocrystalline silicon substrate after ultrasonic cleaning is less than 0.8 nm, ultrasonic cleaning of the polished single crystal silicon substrate is beneficial to improve the bonding force between the film and the substrate.

[0033] Step 2: Fix the single-crystal silicon substrate after ultrasonic cleaning to the substrate, and send it into the magnetron sputtering coating chamber with automatic machinery, and vacuumize until the vacuum degree of the back and bottom is 4.0×10 -4 Below Pa, at Ar + Etching was carried out for 5 min under atmosphere, and the etchi...

Embodiment 1

[0039] Step 1: The single-crystal silicon substrate polished on one side is ultrasonically cleaned in acetone and ethanol for 10 minutes, and dried with a hair dryer.

[0040] Step 2: Fix the substrate on the substrate, and then mechanically and automatically send it into the vacuum coating chamber. Before deposition, the vacuum degree of the background should be lower than 4.0×10 -4 Pa, and etch for 5min, and the etching power is 200W.

[0041] Step 3: NbMoTaWAl refractory high-entropy alloy film was prepared by co-sputtering by magnetron sputtering.

[0042]Among them, the NbMoTaW alloy target with a purity of 99.9wt.% (Nb:Mo:Ta:W=1:1:1:1at.%) adopts a DC power supply with a power of 200W, and the Al target with a purity of 99.99wt.% adopts a radio frequency power supply with a power of 13W, the working pressure setting is 0.3Pa, the deposition temperature is 150°C, the substrate rotation speed is 15r / min, and the total deposition time is 10000s.

[0043] Step 4: After the...

Embodiment 2

[0046] Step 1: The single-crystal silicon substrate polished on one side is ultrasonically cleaned in acetone and ethanol for 10 minutes, and dried with a hair dryer.

[0047] Step 2: Fix the substrate on the substrate, and then mechanically and automatically send it into the vacuum coating chamber. Before deposition, the vacuum degree of the background should be lower than 4.0×10 -4 Pa, and etch for 5min, and the etching power is 200W.

[0048] Step 3: NbMoTaWAl refractory high-entropy alloy film was prepared by co-sputtering by magnetron sputtering.

[0049] Among them, the NbMoTaW alloy target with a purity of 99.9wt.% (Nb:Mo:Ta:W=1:1:1:1at.%) adopts a DC power supply with a power of 200W, and the Al target with a purity of 99.99wt.% adopts a radio frequency power supply with a power of 33W, the set value of the working pressure is 0.3Pa, the deposition temperature is 150°C, the rotation speed of the substrate is 15r / min, and the total deposition time is 10000s.

[0050] ...

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Abstract

The invention discloses a NbMoTaWAl refractory high-entropy alloy film and a preparation method thereof. The NbMoTaWAl refractory high-entropy alloy film comprises the following components of, in percentage by atom, 2.4 at.% - 19.4 at.% of Al, and the balance Nb, Mo, Ta, W with an equal atomic ratio. The NbMoTaWAl refractory high-entropy alloy film is prepared on a single-side polished monocrystalline silicon substrate by adopting a magnetron sputtering and co-sputtering method, wherein a NbMoTaW alloy target adopts a direct-current power supply, and an Al target adopts a radio-frequency power supply. According to the NbMoTaWAl refractory high-entropy alloy film and the preparation method thereof, the content of Al in the NbMoTaWAl high-entropy alloy film is adjusted by controlling the deposition power, so that the agglomeration and reverse sputtering phenomena of target material elements are not prone to be caused, and a microstructure is uniform; after deposition is finished, the substrate is fully cooled in a high-vacuum coating chamber to obtain the NbMoTaWAl refractory high-entropy alloy film, and the obtained film is uniform in component and compact in structure; and the mechanical property and the oxidation resistance of the NbMoTaWAl high-entropy alloy film can be effectively improved through proper addition of the Al.

Description

technical field [0001] The invention belongs to the field of metal surface modification, and specifically relates to a NbMoTaWAl refractory high-entropy alloy film and a preparation method thereof. Background technique [0002] As an emerging alloy concept, high-entropy alloys have received extensive attention in recent years and lead its development trend. The high entropy of mixing leads to low free energy and high phase stability, tending to form single-phase solid solutions, or single-phase alloys containing only a small amount of intermetallic phase and metastable particles. This multi-component solid solution has a large atomic solubility and can effectively inhibit the formation of intermetallic compounds, so it has high strength, excellent corrosion resistance, plasticity, high temperature oxidation resistance and radiation resistance, Can be applied in a wide temperature range. [0003] NbMoTaW refractory high-entropy alloy has a single-phase BCC structure, and ea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54C23C14/16C22C30/00
CPCC23C14/352C23C14/54C23C14/165C22C30/00
Inventor 杨冲李彤王亚强刘刚孙军
Owner XI AN JIAOTONG UNIV
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