Novel ion cleaning technology based on plating of hard alloy surface with ta-C film

A technology of ion cleaning and process, which is applied in metal material coating process, ion implantation plating, sputtering plating, etc., can solve the problems of improving the bonding force of the film base, limiting performance, and damaging the workpiece, so as to improve the deposition thickness and Hardness, improve the bonding force of the film base, and reduce the effect of damage to the workpiece

Active Publication Date: 2021-07-23
NORTHEASTERN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Coating ta-C film on the surface of cemented carbide improves the material properties to a large extent, making the material play a greater role, but the bonding force of the film base is slightly Poor, which limits the improvement of performance and does not achieve the expected effect
Improving the binding force of the membrane base has always been a difficult problem in this field, but the effect of improving the binding force of the membrane base by performing a simple ion cleaning process on the material is not good
The existing pretreatment process for depositing ta-C film is mainly to control the temperature and pressure, and to perform ion bombardment cleaning with the help of plasma cleaning excited by the arc electron flow. Some simple ion bombardment cleaning is not very good. Improve the bonding force of the film base. If the bias voltage is high, it may cause excessive bombardment and damage the workpiece

Method used

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  • Novel ion cleaning technology based on plating of hard alloy surface with ta-C film
  • Novel ion cleaning technology based on plating of hard alloy surface with ta-C film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] (1) Ultrasonic 30kHz to clean impurities on the surface of the plasma cemented carbide substrate, and install the furnace;

[0051] (2) Arc-enhanced argon ion bombardment in the vacuum coating equipment to remove impurities on the surface of the cemented carbide substrate;

[0052] (3) Vacuumize the vacuum chamber of the vacuum coating equipment, and the vacuum degree reaches 1.5×10 -3 Pa, and heated to 450°C;

[0053] (4) Turn on the circular arc enhancement source 1, use Ti as the target source, and generate a large amount of titanium ions Ti after turning on + and e - , titanium ions are splashed on the front baffle plate 3 of the target to prevent contamination of the workpiece on the material tray 4 to be cleaned by ions;

[0054] (5) At the same time, the two arc enhancement targets 2 on the opposite side of the circular arc enhancement source are connected to the positive pole of the power supply 150V to attract a large number of generated electrons;

[0055]...

Embodiment 2

[0061] (1) Ultrasonic 40kHz to clean impurities on the surface of the plasma cemented carbide substrate, and install the furnace;

[0062] (2) Arc-enhanced argon ion bombardment in the vacuum coating equipment to remove impurities on the surface of the cemented carbide substrate;

[0063] (3) Vacuumize the vacuum chamber of the vacuum coating equipment, and the vacuum degree reaches 4.5×10 -3 Pa, and heated to 370°C;

[0064] (4) Turn on the circular arc enhancement source 1, use Ti as the target source, and generate a large amount of titanium ions Ti after turning on + and e - , titanium ions are splashed on the front baffle plate 3 of the target to prevent the workpiece to be cleaned on the material tray 4 from being polluted;

[0065] (5) At the same time, the two arc enhancement target positions 2 on the opposite side of the circular arc enhancement source are connected to the positive pole of the power supply 80V to attract a large number of generated electrons;

[00...

Embodiment 3

[0072] (1) Ultrasonic 40kHz to clean impurities on the surface of the plasma cemented carbide substrate, and install the furnace;

[0073] (2) Arc-enhanced argon ion bombardment in the vacuum coating equipment to remove impurities on the surface of the cemented carbide substrate;

[0074] (3) Vacuumize the vacuum chamber of the vacuum coating equipment, and the vacuum degree reaches 4.5×10 -3 Pa, and heated to 550°C;

[0075] (4) Turn on the circular arc enhancement source 1, use Ti as the target source, and generate a large amount of titanium ions Ti after turning on + and e - , titanium ions are splashed on the front baffle plate 3 of the target to prevent the workpiece to be cleaned on the material tray 4 from being polluted;

[0076] (5) At the same time, the two arc enhancement target positions 2 on the opposite side of the circular arc enhancement source are connected to the positive pole 40V of the power supply to attract a large number of generated electrons;

[00...

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Abstract

The invention discloses a novel ion cleaning technology based on plating of a hard alloy surface with ta-C film. The technology comprises the following steps that 1, impurities on the surface of a plasma substrate are ultrasonically cleaned, and charging is performed; 2, arc light enhanced argon ion bombardment is carried out in vacuum coating equipment to remove the impurities on the surface of the substrate, arc ion plating is adopted as an ionization source, the density of provided electron flow can reach 10+19/m<3>, meanwhile, a columnar coating cathode opposite to the ionization source is converted into an anode in the process, the high-density electron flow is guided to pass through a cleaned workpiece area, Ar atoms are ionized, and the Ar<+> flow is used as an ion cleaning source for the workpiece; and 3, a vacuum plating technology step is started. According to the technology, the high-density ion flow can be provided for cleaning the workpiece, and it is guaranteed that all angles of the workpiece are fully cleaned; and under the condition that low bias voltage is used, excessive bombardment action of overhigh metal ion current on the precise workpiece can be prevented, and the workpiece is prevented from being damaged.

Description

technical field [0001] The invention relates to the technical field of material surface modification, in particular to a novel ion cleaning process based on ta-C coating on the surface of cemented carbide. Background technique [0002] Tetrahedral amorphous carbon film (referred to as ta-C film) is a diamond-like film with a low deposition temperature. Its ratio of sp2 to sp3 bonds is relatively high, and the proportion of sp3 hybrid bonds in the film layer is greater than 50%. It is different from other DLC coatings. Compared with the layer, it has the characteristics of high hardness, high elastic modulus, good lubricity, high resistivity and good chemical inertness, which can effectively reduce the friction coefficient. In the cutting process of the tool, in order to improve the cutting performance, the coating thickness of the tool needs to be as small as possible. Based on many characteristics of the ta-C film, coating the ta-C coating with excellent performance on the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/06
CPCC23C14/352C23C14/022C23C14/0605
Inventor 冯利民李建中张涛吴静怡于凯
Owner NORTHEASTERN UNIV
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