A preparation method of a closed all-diamond microchannel heat sink

A diamond and closed technology, applied in the direction of cooling/ventilation/heating modification, modification through conduction heat transfer, semiconductor/solid-state device components, etc., can solve the problem of limited application range of heat conduction, and achieve easy organization of internal heat exchange, High-quality, high-quality results

Active Publication Date: 2021-12-31
UNIV OF SCI & TECH BEIJING +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the diamond heat sink is an open structure, and the application range of heat conduction is still limited

Method used

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  • A preparation method of a closed all-diamond microchannel heat sink

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Effect test

Embodiment 1

[0041] Using a graphite substrate with a diameter of 150mm coated with a titanium transition layer pretreated by diamond powder on the surface, a diamond thick plate was prepared by DC arc plasma jet CVD. Put the substrate into the vacuum chamber and pump it to the ultimate vacuum of 5×10 - 1 Pa, fill in argon gas gradually to 5.2kPa, set the arc ignition current of the plasma arc power supply to 135A, ignite the arc between the cathode and the anode, and fill in hydrogen gas (Ar:H 2 =0.8:1) The magnetic field coil is adjusted so that the arc rotates stably above the deposition substrate. At the same time, increase the plasma arc power supply current to 320A, so that the substrate temperature rises to 830°C, and CH is introduced according to the ratio of 8%. 4 Gas for diamond nucleation, the nucleation time is 30min, reducing CH 4 The gas ratio is increased to 5%, and the plasma arc power supply current is further increased so that the substrate temperature reaches 860°C, a...

Embodiment 2

[0043] Using a graphite substrate with a diameter of 120mm coated with a titanium transition layer pretreated by diamond powder on the surface, a diamond thick plate was prepared by DC arc plasma jet CVD. Put the substrate into the vacuum chamber and pump it to the ultimate vacuum of 5×10 - 1 Pa, fill in argon gas gradually to 5.2kPa, set the arc ignition current of the plasma arc power supply to 135A, ignite the arc between the cathode and the anode, and fill in hydrogen gas (Ar:H 2 =0.8:1) The magnetic field coil is adjusted so that the arc rotates stably above the deposition substrate. At the same time, increase the plasma arc power supply current to 320A, so that the substrate temperature rises to 830°C, and CH is introduced in proportion to 5%. 4 Gas for diamond nucleation, the nucleation time is 30min, reducing CH 4 The gas ratio is increased to 3%, and the plasma arc power supply current is further increased so that the substrate temperature reaches 880°C, and then e...

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Abstract

The invention discloses a method for preparing a closed all-diamond microchannel heat sink, which belongs to the field of heat dissipation of semiconductor devices. High-quality self-supporting diamond slabs prepared based on DC arc plasma jet CVD, which are engraved with high and low staggered fin structures by precise laser processing. Then molybdenum wire is placed on the low fins to fill the height difference between the low fins and the high fins and the lateral spacing of the high fins. Then diamond grows until it covers the entire diamond plate and has a certain thickness. Finally, the closed all-diamond microchannel heat sink is obtained by removing the molybdenum wire. The diamond thick plate used in the invention has fast growth speed, uniform and dense thick plate, and excellent quality. The closed all-diamond micro-channel has strong heat exchange capacity, which can greatly improve the heat dissipation performance of the heat sink component and the diversity of application scenarios, so as to achieve effective heat dissipation under extreme conditions such as high power, high heat flow, and space environment.

Description

Technical field: [0001] The invention belongs to the field of heat dissipation of high heat flux electronic devices, and in particular provides a method for preparing a closed all-diamond microchannel heat sink for ultrahigh heat flux heat dissipation. It is characterized by high-quality self-supporting diamond slabs prepared based on DC arc plasma jet CVD, which are carved with high and low staggered fin structures by precise laser processing. Then place the molybdenum wire on the low fins to fill the height difference between the high and low fins and the horizontal distance between the high fins. Then diamond grows until it covers the entire diamond plate and has a certain thickness. Finally, the closed all-diamond microchannel heat sink is obtained by removing the molybdenum wire. To achieve effective heat dissipation under extreme conditions such as high power, high heat flow, and space environment. [0002] technical background [0003] The heating problem of electro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/367H01L23/373H05K7/20
CPCH01L23/367H01L23/3732H05K7/2039
Inventor 郑宇亭李成明李世谕魏俊俊刘金龙陈良贤安康欧阳晓平
Owner UNIV OF SCI & TECH BEIJING
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