Graphite piece and processing method thereof, single crystal growth equipment

Abstract

The invention provides a graphite piece, its processing method, and single crystal growth equipment. The treatment method comprises steps: 1) cleaning and drying the graphite piece; 2) attaching graphite paper matching the shape of the graphite piece on the surface of the dried stone grinding piece, and then curing; 3) coating the organic tantalum solution on the surface of the graphite paper , the coating amount of tantalum is 0.001g / mm 2 -10g / mm 2 , and then sequentially dried and sintered at a high temperature to obtain a cracked tantalum carbide layer on the surface of the graphite paper; the pressure of the high-temperature sintering is below 0.01mbar, the temperature is 1700°C-2500°C, and the high-temperature sintering time is 6h-15h; 4) the The graphite piece formed with the tantalum carbide layer is cooled and put into the silicon-containing material, and the graphite piece is baked for a predetermined time under a preset pressure and a preset temperature. Compared with the prior art, the present invention can ensure that the surface of the prepared graphite parts is not corroded when applied in a thermal field environment, and the prepared graphite parts have considerable strength, which can provide a certain structural support.

Description

technical field [0001] The invention belongs to the field of material preparation, in particular to a graphite piece and its processing method, and a single crystal growth equipment; the graphite piece treated by the method is especially suitable for growing single crystal silicon carbide by PVT method or carbonization by CVD method Epitaxial growth of silicon / gallium nitride etc. Background technique [0002] As the third-generation wide-bandgap semiconductor material, silicon carbide has an irreplaceable role and advantages in high-power and high-voltage scenarios. It has become an important research project for integrated circuit materials in the long-term goal outline, and has unlimited market prospects. At present, the most mainstream method of obtaining silicon carbide substrates at home and abroad is to use the PVT method to prepare single-crystal silicon carbide crystals, and relatively small liquid-phase or gas-phase chemical methods. However, no matter which metho...

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a treatment method for graphite parts, which is used to solve the problem that the graphite pretreatment method in the prior art cannot prevent the crystal from being corroded while preventing the graphite thermal field from being corroded. Problems such as stress caused by graphite or tantalum carbide layer extrusion

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