Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal reinforced porous diamond film and preparation method thereof

A diamond film and metal strengthening technology, which is applied in metal material coating process, gaseous chemical plating, ion implantation plating, etc., can solve the problems of micro-cracks and small cavities, high equipment cost, and defect expansion, etc., to improve surface adsorption Performance, method simplicity, combined strength-enhancing effects

Active Publication Date: 2021-07-30
KUNMING UNIV OF SCI & TECH
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above-mentioned method has reported the processing method of porous diamond film, all adopts plasma beam sputtering etching to form porous diamond film on the porous processing method, and the equipment cost is high, not See related reports on the formation of porous diamond films by etching diamond films with ordinary plasma
Even when the diamond film is deposited by microwave chemical vapor deposition, there will be defects such as microcracks and tiny cavities inside. When the porous diamond film is prepared by calcination, the defects will further expand and even break.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal reinforced porous diamond film and preparation method thereof
  • Metal reinforced porous diamond film and preparation method thereof
  • Metal reinforced porous diamond film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Step 1: Pre-polish the silicon substrate, put the polished substrate into the diamond suspension and ultrasonically treat it for 30 minutes, then wash it with alcohol and deionized water in sequence, dry it with dry air, put it in Microwave chemical vapor deposition system, the pressure of the reaction chamber is pumped to 0.1KPa, and then 380sccm hydrogen gas is introduced. After the pressure reaches about 2KPa, the microwave system is turned on. After the plasma ball appears, the pressure is adjusted to 13KPa, the temperature is 850°C, and 11sccm hydrogen gas is introduced. Methane was deposited for 5 hours to obtain a diamond film with a thickness of 8 μm on the surface of the silicon substrate.

[0041] Step 2: Magnetron sputtering iron oxide with a thickness of 15 nm on the deposited diamond film to form a dense film.

[0042]Step 3: Put the diamond film with a layer of nano-oxide deposited on the surface obtained in step 2 into a microwave chemical vapor depositio...

Embodiment 2

[0047] Step 1: Pre-polish the silicon substrate, put the polished substrate into the diamond suspension and ultrasonically treat it for 20 minutes, then wash it with alcohol and deionized water in sequence, dry it with dry air, put it in Microwave chemical vapor deposition system, the pressure of the reaction chamber is pumped to 0.1KPa, and then 360sccm hydrogen gas is introduced. After the pressure reaches about 2KPa, the microwave system is turned on. After the plasma ball appears, the pressure is adjusted to 12KPa, the temperature is 850°C, and 10sccm is injected. Methane was deposited for 5 hours to obtain a diamond film with a thickness of 5.5 μm on the surface of the silicon substrate.

[0048] Step 2: Magnetron sputtering nickel oxide with a thickness of 5 nm on the deposited diamond film to form a dense film.

[0049] Step 3: Put the diamond film with a layer of nano-oxide deposited on the surface obtained in step 2 into a microwave chemical vapor deposition system, f...

Embodiment 3

[0054] Step 1: Pre-polish the silicon substrate, put the polished substrate into the diamond suspension and ultrasonically treat it for 40 minutes, then wash it with alcohol and deionized water in sequence, dry it with dry air, put it in Microwave chemical vapor deposition system, the pressure of the reaction chamber is pumped to 0.1KPa, and then 400sccm hydrogen gas is introduced. After the pressure reaches about 2KPa, the microwave system is turned on. After the plasma ball appears, the pressure is adjusted to 14KPa, the temperature is 850°C, and 12sccm is introduced. Methane was deposited for 5 hours to obtain a diamond film with a thickness of 10 μm on the surface of the silicon substrate.

[0055] Step 2: Magnetron sputtering cobalt oxide with a thickness of 40 nm on the deposited diamond film to form a dense film.

[0056] Step 3: Put the diamond film with a layer of nano-oxide deposited on the surface obtained in step 2 into a microwave chemical vapor deposition system,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a metal reinforced porous diamond film and a preparation method thereof, and belongs to the technical field of diamond films. According to the metal reinforced porous diamond film and the preparation method thereof, a nano or micron-sized diamond film is deposited by adopting a microwave chemical vapor deposition technology, a layer of oxide is sputtered on the surface of the diamond film by adopting a magnetron sputtering method, then the diamond film is put into a microwave chemical vapor deposition system, the diamond film is etched by using hydrogen argon or hydrogen plasma, then the diamond film is put into a sodium nitrate solution to be heated, the diamond film is further etched, non-diamond phases and metal nanoparticles generated during plasma etching are removed, platinum, gold and other precious metal elementary substances are subjected to magnetron sputtering again, finally, the diamond film is put into the microwave chemical vapor deposition system to disperse precious metal, and the metal reinforced porous diamond film with a good shape is obtained. The preparation method is simple and easy to operate, the surface of the prepared diamond film is of a porous structure, the filled precious metal is a good catalyst, and the diamond film has wide application prospects in the fields of chemical catalysis, sensors and the like.

Description

technical field [0001] The invention relates to the technical field of diamond membranes, in particular to a metal-reinforced porous diamond membrane and a preparation method thereof. Background technique [0002] The unique structure of diamond makes it have many excellent physical and chemical properties such as high hardness, good stability, and strong thermal conductivity. It has good application prospects in many high-tech fields such as energy, catalysis, sensors, aerospace, and precision machining. However, the content of natural diamond in nature is very small, and it is often in the form of a single particle, which is difficult to process and expensive, and is mostly used in luxury goods such as jewelry. At present, high-tech fields have special requirements for the dimension and microstructure of diamond materials. For example, the window materials of aerospace vehicles and high-power lasers require high-quality two-dimensional diamond films, and fields such as ene...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/27C23C16/511C23C16/02C23C14/35C23C14/16C23C14/08C23C14/58C23C28/00
CPCC23C16/511C23C16/274C23C14/35C23C14/5873C23C14/165C23C16/0254C23C14/085C23C28/34
Inventor 杨黎郭胜惠冯曙光高冀芸李思佳胡途
Owner KUNMING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com