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Platinum film and preparation method and application of platinum film

A thin film and platinum technology, applied in the field of platinum thin film and its preparation, can solve problems such as product reliability, insufficient high temperature resistance, poor film uniformity, etc., to reduce poor uniformity, high reliability, improve consistency and stability Effect

Active Publication Date: 2021-07-30
上海铂源微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, the above-mentioned preparation method using alumina ceramics as a substrate combined with a magnetron sputtering process has the following problems: (1) due to poor control of the surface flatness of the substrate material alumina ceramics, the uniformity of the film is poor
(2) Insufficient high temperature resistance and insufficient long-term stability in high temperature applications
(3) The bonding force between the substrate material alumina ceramics and the platinum film is not enough, resulting in product reliability problems
(4) The effect of electron surface scattering and quantum size effect on the resistivity is not easy to control, which is also the biggest obstacle to domestic civilian industrialization

Method used

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  • Platinum film and preparation method and application of platinum film
  • Platinum film and preparation method and application of platinum film
  • Platinum film and preparation method and application of platinum film

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Embodiment 1

[0057] This embodiment provides a platinum thin film, such as image 3 As shown, the platinum thin film includes a circular sapphire substrate 1, and a 14nm transition layer, a 1000nm platinum film layer 3 and a 10nm protective layer that are sequentially arranged on the surface of the sapphire substrate 1;

[0058] The transition layer is an aluminum nitride layer 2 , and the protective layer is a titanium dioxide layer 4 .

[0059] The preparation method of the platinum thin film of the present embodiment comprises the steps:

[0060] (1) if figure 1 As shown, a 14nm thick aluminum nitride layer 2 is deposited on the surface of a circular C-Plane (0001) sapphire substrate 1 by metal-organic chemical vapor deposition (MOCVD), and the aluminum-containing substance used in the metal-organic chemical vapor deposition method trimethylaluminum (TMA), ammonia (NH 3 ) as nitrogen source, hydrogen H 2 and nitrogen N 2 As a carrier gas, perform MOCVD at 1150°C;

[0061] (2) if ...

Embodiment 2

[0066] This embodiment provides a platinum thin film, the platinum thin film includes a circular sapphire substrate, and a 10nm transition layer, an 800nm ​​platinum film layer and a 10nm protective layer sequentially arranged on the surface of the sapphire substrate;

[0067] The transition layer is an aluminum nitride layer, and the protection layer is an aluminum oxide layer.

[0068] The preparation method of the platinum thin film of the present embodiment comprises the steps:

[0069] (1) Deposit a layer of 10nm thick aluminum nitride on the surface of a circular sapphire substrate by metal organic chemical vapor deposition (MOCVD). The aluminum-containing substance used in the metal organic chemical vapor deposition method is trimethylaluminum, ammonia gas NH 3 As a nitrogen source, hydrogen and nitrogen are used as carrier gases, and MOCVD is carried out at 1150°C;

[0070] (2) Utilize the direct current magnetron sputtering method to deposit one deck platinum film l...

Embodiment 3

[0075] This embodiment provides a platinum thin film, the platinum thin film includes a circular sapphire substrate, and an 18nm transition layer, a 1000nm platinum film layer and a 15nm protective layer sequentially arranged on the surface of the sapphire substrate;

[0076] The transition layer is a titanium dioxide layer, and the protective layer is a titanium dioxide layer.

[0077] The preparation method of the platinum thin film of the present embodiment comprises the steps:

[0078] (1) Deposit a layer of titanium dioxide with a thickness of 18nm on the surface of a circular sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The titanium-containing substance used in the metal-organic chemical vapor deposition method is titanium isopropoxide, and oxygen is used as an auxiliary gas. , hydrogen and nitrogen as carrier gas, MOCVD at 850°C;

[0079] (2) Utilize DC magnetron sputtering method to deposit one deck platinum film layer on the surface of descr...

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Abstract

The invention provides a platinum film. A transition layer is adopted to connect a substrate and a platinum film layer, and aluminum nitride, silicon dioxide, silicon nitride or sapphire is selected as the substrate, so that compared with an original aluminum oxide ceramic substrate, the surface flatness is higher, the defect density is lower, and a more excellent substrate environment is provided. The uniformity of the prepared platinum film layer is better. Meanwhile, a protective layer is used for performing high-temperature protection on the platinum film layer, so that the high-temperature resistance of the platinum film is improved. According to the preparation method of the platinum film, metal organic chemical deposition, magnetron sputtering and atomic layer deposition methods are combined, the electron surface scattering effect and the high-temperature cluster effect can be effectively solved, the platinum film which is good in consistency and resistant to high temperature and has long-term stability is prepared, and the platinum film can be well applied to the field of sensors.

Description

technical field [0001] The invention relates to the technical field of sensor preparation, in particular to a platinum thin film and its preparation method and application. Background technique [0002] Platinum thin films are mainly used as electrical conductors and resistors, and are key components of platinum thin film temperature sensors. However, at present, the preparation of high-performance high-temperature resistant platinum thin films has always been a technical problem, which requires platinum thin films to have suitable electrical conductivity and a specific temperature coefficient (TCR). [0003] The difficulty in making high-performance high-temperature resistant platinum thin films is mainly caused by the following two reasons: [0004] The first is structural defects, that is, when the platinum film is formed, the gas phase undergoes a sharp phase transition to form a solid phase. In this special process, structural defects are caused. In addition to the usu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C28/00C23C16/40C23C16/34C23C14/18C23C14/35
CPCC23C28/322C23C28/34C23C28/345C23C28/3455C23C16/403C23C16/301C23C16/405C23C14/185C23C14/35
Inventor 邓道安
Owner 上海铂源微电子有限公司