Regeneration processing method of substrate slice after SOI bonding process

Abstract

The invention belongs to the technical field of recycling and processing of monocrystalline silicon polished wafers of integrated circuits, and particularly relates to a regeneration processing method of a substrate slice after an SOI bonding process. The method comprises the following steps: demoulding and cleaning a recovered SOI substrate slice, polishing the front surface of the substrate slice, cleaning the substrate slice for the first time, testing the flatness uniformity and thickness of the substrate slice, and cleaning the substrate slice for the second time. According to the regeneration processing method disclosed by the invention, the recovery of the substrate slice after the SOI bonding process is realized, so that the substrate slice reaches a substrate silicon slice with a high surface quality level again, the substrate slice can be circularly used for multiple times in the SOI bonding process, and the processing cost is far lower than the price of purchasing a new substrate silicon slice.

Description

technical field [0001] The invention belongs to the technical field of recovery and processing of integrated circuit monocrystalline silicon polished wafers, and in particular relates to a regeneration processing method of substrate wafers after an SOI bonding process. Background technique [0002] Single crystal silicon polished wafer is a widely used semiconductor material, which can be used as a substrate for manufacturing SOI (Silicon-On-Insulator, silicon on insulating substrate) materials, SOI is a functional integrated circuit substrate It is a material in which a single crystal silicon film is grown on an insulating substrate, or a single crystal silicon film is separated from a silicon substrate by an insulating layer. It is an ideal material for manufacturing MOS transistors. With the development of ultra-large-scale integrated circuits, in order to reduce the cost of chip manufacturing, domestically mainly use polished single crystal silicon wafers with a diameter...

AI Technical Summary

Problems solved by technology

Since the front of the substrate is quite rough compared to the original silicon substrate, there will be some damage on the surface, and there is an oxide film growing on the entire back and front edge 2mm before bonding, which cannot be directly used for re-bonding

Due to technical limitations, the substrates have not been able to be effectively recycled in China, or the recycled substrates cannot meet the requirements for reuse. Therefore, the current domestic bonding cost is at least twice that of substrate silicon wafers.

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