Regeneration processing method of substrate slice after SOI bonding process

A processing method and a bonding technology, which are applied in the field of recycling and processing of integrated circuit single crystal silicon polished wafers, can solve problems such as roughness, surface damage, and ineffective recycling of substrate wafers, and achieve the effects of reducing costs and increasing yield
CN113192823AActive Publication Date: 2021-07-30MCL ELECTRONICS MATERIALS
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
MCL ELECTRONICS MATERIALS
Publication Date
2021-07-30

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Abstract

The invention belongs to the technical field of recycling and processing of monocrystalline silicon polished wafers of integrated circuits, and particularly relates to a regeneration processing method of a substrate slice after an SOI bonding process. The method comprises the following steps: demoulding and cleaning a recovered SOI substrate slice, polishing the front surface of the substrate slice, cleaning the substrate slice for the first time, testing the flatness uniformity and thickness of the substrate slice, and cleaning the substrate slice for the second time. According to the regeneration processing method disclosed by the invention, the recovery of the substrate slice after the SOI bonding process is realized, so that the substrate slice reaches a substrate silicon slice with a high surface quality level again, the substrate slice can be circularly used for multiple times in the SOI bonding process, and the processing cost is far lower than the price of purchasing a new substrate silicon slice.
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Description

technical field

[0001] The invention belongs to the technical field of recovery and processing of integrated circuit monocrystalline silicon polished wafers, and in particular relates to a regeneration processing method of substrate wafers after an SOI bonding process. Background technique

[0002] Single crystal silicon polished wafer is a widely used semiconductor material, which can be used as a substrate for manufacturing SOI (Silicon-On-Insulator, silicon on insulating substrate) materials, SOI is a functional integrated circuit substrate It is a material in which a single crystal silicon film is grown on an insulating substrate, or a single crystal silicon film is separated from a silicon substrate by an insulating layer. It is an ideal material for manufacturing MOS transistors. With the development of ultra-large-scale integrated circuits, in order to reduce the cost of chip manufacturing, domestically mainly use polished single crystal silicon wafers with a diameter...

Claims

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