PECVD coating method of efficient heterojunction solar cell

A solar cell and heterojunction technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of polluting the surface of silicon wafers, affecting the passivation effect, and affecting the stability of the battery process, so as to reduce the saturation dark current and improve Passivation effect, effect suitable for industrial production

Pending Publication Date: 2021-07-30
GOLD STONE (FUJIAN) ENERGY CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Existing PECVD processes all adopt I / N-I / P or I / P-I / N processes. Although the chambers of PECVD deposition equipment I / N / P are completely separated to avoid cross-contamination between chambers, the I / P process The carrier plate is shared, and the residual boron on the surface of the carrier plate will pollute the surface of the silicon wafer, affect the passivation effect of the subsequent intrinsic I layer, and affect the process stability of different batches of cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • PECVD coating method of efficient heterojunction solar cell
  • PECVD coating method of efficient heterojunction solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The content of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments of the description:

[0017] A PECVD coating method for a high-efficiency heterojunction solar cell, which includes a gradual deposition I-layer method; the gradual deposition I-layer method is to use the PECVD method to decompose the reaction gas for intrinsic I-type amorphous silicon deposition, and the reaction gas As the hydrogen content gradually increases, the deposition rate of intrinsic type I amorphous silicon decreases gradually.

[0018] The pressure of the reaction gas is 30-150Pa, and the gas partial pressure of the hydrogen is gradually increased from 0-10Pa to 80Pa-150Pa; the intrinsic I-type amorphous silicon deposition rate is gradually reduced to

[0019] The reactive gases include silane and hydrogen.

[0020] The thickness of the intrinsic type I amorphous silicon film is

[0021] The PECVD coating method of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a PECVD coating method of an efficient heterojunction solar cell. The PECVD coating method comprises a gradient I layer deposition method. According to the gradient type I layer deposition method, a PECVD method is used for decomposing reaction gas to conduct intrinsic I type amorphous silicon deposition, the hydrogen content in the reaction gas is gradually increased, and the intrinsic I type amorphous silicon deposition rate is gradually reduced. According to the PECVD coating method for the efficient heterojunction solar cell provided by the invention, the passivation effect can be improved, and the performance of an intrinsic I-type amorphous silicon film can be optimized to the greatest extent.

Description

technical field [0001] The invention relates to a PECVD coating method for high-efficiency heterojunction solar cells. Background technique [0002] Due to its unique double-sided symmetrical structure, the heterojunction solar cell has good passivation effect of the amorphous silicon layer, high photoelectric conversion efficiency and double-sidedness, low temperature coefficient, almost no light-induced attenuation, and simple process flow. With a large space for cost reduction and a good prospect for grid parity, it has become the industry-recognized ultimate solution for future battery technology, and is known by the industry as one of the candidate technologies for next-generation commercial photovoltaic production. [0003] Heterojunction solar cells use n-type silicon wafers as substrates, intrinsic I-layer amorphous silicon to passivate the surface of crystalline silicon, boron-doped p-type amorphous silicon films as emitters, and phosphorus-doped The N-type amorpho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/20H01L31/0747C23C16/24C23C16/50C23C16/52
CPCC23C16/24C23C16/50C23C16/52H01L31/0747H01L31/1804H01L31/1868H01L31/202Y02E10/547Y02P70/50
Inventor 庄辉虎黄辉明黄金文
Owner GOLD STONE (FUJIAN) ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap