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Light-emitting diode based on CsPbI3 material

A technology of light-emitting diodes and substrates, applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems of difficult large-area and flexible device preparation, short life, low efficiency, etc., to achieve light color stability, The preparation process is simple and the effect of improving luminous efficiency

Inactive Publication Date: 2021-08-20
BEIFANG UNIV OF NATITIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Traditional inorganic LED technology is relatively mature and has high luminous efficiency. It is widely used in the field of lighting, but the preparation process such as epitaxial growth limits its difficulty in the preparation of large-area and flexible devices.
Organic or quantum dot LEDs have the advantages of easy large-area film formation and flexibility, but the problems of low efficiency and short life under high brightness still need to be solved urgently

Method used

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  • Light-emitting diode based on CsPbI3 material
  • Light-emitting diode based on CsPbI3 material
  • Light-emitting diode based on CsPbI3 material

Examples

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Embodiment 1

[0029] see Figure 1-4 As shown, the present embodiment relates to a light-emitting diode based on CsPbI3 material, and the specific implementation steps are as follows:

[0030] Step 1: Carry out standardized cleaning of the transparent conductive glass substrate (first rinse with deionized water, then repeatedly ultrasonically clean three times with deionized water, acetone, and ethanol, and then dry for 20 minutes. Ultraviolet ozone pretreatment Time is 20min) after drying, prepare transparent conductive glass as the anode substrate;

[0031] Step 2, prepare the perovskite precursor solution, dissolve PEABr, NPABr2, CsBr and PbBr2 in the organic solution; use the spin coating method, the spin coating speed is 2000-6000rpm for coating, and the conductive glass is heated and kept at the required heat of 120 ℃, heat the perovskite precursor solution and spin-coat the substrate surface, then drop chlorobenzo and spin-coat to obtain the first perovskite layer, and anneal for 2 ...

Embodiment 2

[0034] Using the same process as in Example 1, the difference is that in step 2, CH3NH3PbI3 with a mass ratio of 2.5% and CH3NH3PbBr3 with a mass ratio of 1.25% can be used to mix two different systems of perovskite precursor solutions according to a molar ratio of 0.3:2.7 to obtain a Perovskite solution with yellow light.

Embodiment 3

[0036] The preparation method is the same as that in Example 1, the difference is that in step 3, in the perovskite precursor solution, the ratio of each component is adjusted to m=0.8, c=0, n=1.

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Abstract

The invention relates to a light-emitting diode based on a CsPbI3 material. The light-emitting diode based on the CsPbI3 material is prepared by the following steps: (1) carrying out standardized cleaning on a transparent conductive glass substrate, then drying, and preparing transparent conductive glass as an anode substrate; (2) preparing a perovskite precursor solution; and (3) transferring the conductive glass to a vacuum cavity, and sequentially forming an electron transport layer (POT2T), an electron injection layer (Liq) and a metal cathode electrode (Al) on the surface of the perovskite film through thermal evaporation. Compared with the prior art, the preparation process of the light-emitting diode made of the CsPbI3 material is simple, the light color of the prepared light-emitting diode made of the CsPbI3 material is stable, and a perovskite light-emitting layer is prepared by adopting a two-time spin-coating method, so that the light-emitting efficiency of the device is effectively improved.

Description

technical field [0001] The invention relates to the technical field of photoelectric devices, in particular to a light-emitting diode based on CsPbI3 material. Background technique [0002] In recent years, a light-emitting diode is a commonly used light-emitting device, which releases energy and emits light through the recombination of electrons and holes, and it is widely used in the field of lighting. Light-emitting diodes are referred to as LEDs for short. Made of compounds containing Gallium (Ga), Arsenic (As), Phosphorus (P), Nitrogen (N), etc. [0003] Light-emitting diodes can efficiently convert electrical energy into light energy, and have a wide range of uses in modern society, such as lighting, flat panel displays, medical devices, etc. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/56H01L51/54
CPCH10K71/12H10K50/85H10K71/00
Inventor 张正国刘海柯义虎
Owner BEIFANG UNIV OF NATITIES
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