Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for stabilizing interface between perovskite thin film and hole transport layer

A hole transport layer and perovskite technology, applied in the field of solar cells, can solve the problems of poor stability of perovskite solar cells, instability of perovskite film and hole transport layer film, etc.

Active Publication Date: 2021-08-24
XI'AN PETROLEUM UNIVERSITY
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] One of the reasons for the poor stability of perovskite solar cells is the instability between the perovskite film and the hole transport layer film, which is due to the dissolution of the perovskite film by the precursor solution of the hole transport material during the preparation process. On the other hand, due to the interpenetration between the perovskite film and the hole transport layer in the later stage of battery power generation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for stabilizing interface between perovskite thin film and hole transport layer
  • Method for stabilizing interface between perovskite thin film and hole transport layer
  • Method for stabilizing interface between perovskite thin film and hole transport layer

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0040] A method for stabilizing the interface between a perovskite film and a hole transport layer, characterized in that: the preparation method comprises the following steps:

[0041] Step S1: ultrasonically clean the fluorine-doped tin oxide substrate with deionized water, acetone and ethanol for 30 min, and dissolve tetraisopropyl titanate in ethanol, acetylacetone and weakly acidic water solvent to prepare TiO 2 Precursor solution, place and age for 48h before use, spin-coat TiO on the cleaned fluorine-doped tin oxide substrate at 3000rpm 2 Precursor solution for 20s, after spin coating, sintering in a muffle furnace at 510°C for 30min.

[0042] Step S2: Step S2 includes the following steps,

[0043] S21: Prepare 1,4-dibromobenzene precursor solution, the solute of 1,4-dibromobenzene precursor solution is 1,4-dibromobenzene powder, the solvent is isopropanol, and the concentration of the prepared solution is 0.2-2mg / ml.

[0044] S22: configure CH 3 NH 3 PB 3 Precur...

Embodiment 1

[0051] A method for stabilizing the interface between a perovskite film and a hole transport layer, the preparation method comprising the following steps:

[0052] Step S1: ultrasonically clean the fluorine-doped tin oxide substrate with deionized water, acetone and ethanol for 30 min, and dissolve tetraisopropyl titanate in ethanol, acetylacetone and weakly acidic water solvent to prepare TiO 2 Precursor solution, place and age for 48h before use, spin-coat TiO on the cleaned fluorine-doped tin oxide substrate at 3000rpm 2 Precursor solution for 20s, after spin coating, sintering in a muffle furnace at 510°C for 30min.

[0053] Step S2: Step S2 includes the following steps,

[0054] S21: Prepare 1,4-dibromobenzene precursor solution, the solute of 1,4-dibromobenzene precursor solution is 1,4-dibromobenzene powder, the solvent is isopropanol, and the concentration of the prepared solution is 0.2mg / ml.

[0055] S22: configure CH 3 NH 3 PB 3 Precursor solution, CH 3 NH ...

Embodiment 2

[0064] A method for stabilizing the interface between a perovskite film and a hole transport layer, the preparation method comprising the following steps:

[0065] Step S1: ultrasonically clean the fluorine-doped tin oxide substrate with deionized water, acetone and ethanol for 30 min, and dissolve tetraisopropyl titanate in ethanol, acetylacetone and weakly acidic water solvent to prepare TiO 2 Precursor solution, place and age for 48h before use, spin-coat TiO on the cleaned fluorine-doped tin oxide substrate at 3000rpm 2 Precursor solution for 20s, after spin coating, sintering in a muffle furnace at 510°C for 30min.

[0066] Step S2: Step S2 includes the following steps,

[0067] S21: Prepare 1,4-dibromobenzene precursor solution, the solute of 1,4-dibromobenzene precursor solution is 1,4-dibromobenzene powder, the solvent is isopropanol, and the concentration of the prepared solution is 0.6mg / ml.

[0068] S22: configure CH 3 NH 3 PB 3 Precursor solution, CH 3 NH ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for stabilizing an interface between a perovskite thin film and a hole transport layer. The method comprises the following steps of S1, cleaning a fluorine-doped tin oxide substrate, spin-coating the fluorine-doped tin oxide substrate with a TiO2 precursor solution, and sintering after spin-coating; S2: S21: preparing a 1, 4-dibromobenzene precursor; (S22) preparing a CH3NH3PbI3 precursor; s23, preparing a hole transport layer precursor solution; S3, carrying out three steps of dropwise adding, spin coating and drying on the CH3NH3PbI3 precursor solution prepared in the step S22, and preparing a CH3NH3PbI3 thin film; S4: 1, spin-coating the CH3NH3PbI3 thin film with a 1,4-dibromobenzene precursor solution, and carrying out heat treatment; and S5, spin-coating the hole transport layer material on the surface of the perovskite thin film to obtain a stable interface of the perovskite thin film and the hole transport layer. According to the present invention, the 1,4-dibromobenzene hole transport material can prevent the precursor solution from dissolving the perovskite thin film, and interpenetration between the perovskite thin film and the hole transport layer in the later battery power generation process is avoided.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a method for stabilizing the interface between a perovskite thin film and a hole transport layer. Background technique [0002] Energy depletion and environmental pollution have made people pay more and more attention to sustainable development. The development of new clean energy to alleviate current environmental and energy problems is an important connotation of sustainable development. As the source of all energy, solar energy is inexhaustible and inexhaustible, making the conversion and utilization of light energy into electrical energy a reliable and powerful energy supply method. [0003] In recent decades, the results of scientific research have shown that photovoltaic devices, such as silicon solar cells, have great potential for low cost, easy manufacture and high conversion efficiency. After silicon solar cells, researchers have never stopped researchin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/48H01L51/44H01L51/46H01L51/42
CPCH10K71/10H10K71/311H10K85/00H10K30/10H10K30/87Y02E10/549
Inventor 李燕张家旭刘泽承弓斌王宇鹏
Owner XI'AN PETROLEUM UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com