Method for stabilizing interface between perovskite thin film and hole transport layer
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- XI'AN PETROLEUM UNIVERSITY
- Publication Date
- 2021-08-24
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of solar cells, and in particular relates to a method for stabilizing the interface between a perovskite thin film and a hole transport layer. Background technique
[0002] Energy depletion and environmental pollution have made people pay more and more attention to sustainable development. The development of new clean energy to alleviate current environmental and energy problems is an important connotation of sustainable development. As the source of all energy, solar energy is inexhaustible and inexhaustible, making the conversion and utilization of light energy into electrical energy a reliable and powerful energy supply method.
[0003] In recent decades, the results of scientific research have shown that photovoltaic devices, such as silicon solar cells, have great potential for low cost, easy manufacture and high conversion efficiency. After silicon solar cells, researchers have never stopped researchin...