Half-cell preparation method, half-cell and solar cell
A half-cell and transparent electrode technology, applied in the field of solar cells, can solve the problems of limiting the photovoltaic performance of all-inorganic perovskite solar cells, poor thermal stability of precursor films, unfavorable commercial application of perovskite solar cells, etc.
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[0034] In view of this problem, an embodiment of the present invention provides a method for preparing a half-cell to overcome the above problem. figure 1 It is a flowchart of a half-cell preparation method in a solar cell provided according to an embodiment of the present invention, such as figure 1 As shown, the method includes the following steps:
[0035] S100: Mix cadmium salt, dimethylamine lead iodide, cesium iodide, N,N-dimethylformamide, and dimethylsulfame to form a perovskite precursor;
[0036] S200: spin-coating the perovskite precursor solution on the transparent electrode covered with the first carrier transport layer, forming a perovskite precursor film on the first carrier transport layer;
[0037] S300: Annealing the transparent electrode loaded with the perovskite precursor film and the first carrier transport layer to obtain a half-cell; wherein the annealed perovskite precursor film is called a perovskite film. Among them, the perovskite film includes ca...
Embodiment 1
[0061] Step 1: Spread 35 μL of titanium isopropoxide solution with a concentration of 0.2 mol / L on the treated conductive glass, spin coating at a speed of 3000 rpm for 30 seconds, place the film on a hot stage at 130 ° C for 10 minutes, and then transfer to Annealed in a muffle furnace at 500°C for 2 hours to obtain TiO 2 electron transport layer.
[0062] Step 2: Weigh 444mg DMAPbI 3 , 182mg CsI and a certain amount of CdCl 2 , dissolved in 850 μL of DMF and 150 μL DMSO mixed solvent to form a perovskite precursor, in TiO 2 The electron transport layer was first rotated at a speed of 1500rpm for 10s, and then rotated at a speed of 4000rpm for 30s. The conductive glass, electron transport layer and perovskite layer were first heated on a 70°C heating stage for 3 minutes, and then heated on a 190°C heating stage in air for 9 minutes to obtain a half-cell, in which the annealed perovskite precursor film included CdCl 2 Doped CsPbI 3 Perovskite.
[0063] Step 3: Deposit a ...
Embodiment 2
[0066] Based on the embodiment in embodiment 1, the steps in embodiment 2 are exactly the same as in embodiment 1, only the CdCl in step 2 in embodiment 1 2 Replaced with the same concentration of CdBr 2 , the rest of the parameters are the same as those in Example 1, and the experimental parameters are listed in Table 2.
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