Organic electrode with stable water and oxygen as well as preparation method and application of organic electrode

An organic electrode and stable technology, applied in the field of organic electrodes and their preparation, can solve the problems of long-term stability threats of organic materials, performance degradation of electrode materials, loss of mobility, etc., to avoid free electrons, improve stability, and have good application prospects Effect

Active Publication Date: 2021-09-17
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the content of water and oxygen in organic materials is inseparable from its working process, even trace amounts of water and oxygen (at least 10ppm-20ppm) that are difficult to completely remove in ultra-dry solvents will pose a great threat to the long-term stability of organic materials (will form electron trap)
Studies have shown that the water oxygen around the organic material exists as a hydrated oxygen complex with an unknown structure, and its characteristic energy level is around -3.6eV, and the distribution width is about ±0.1eV. electrons, causing them to lose their mobility, which eventually leads to a decrease in the performance of the electrode material

Method used

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  • Organic electrode with stable water and oxygen as well as preparation method and application of organic electrode
  • Organic electrode with stable water and oxygen as well as preparation method and application of organic electrode
  • Organic electrode with stable water and oxygen as well as preparation method and application of organic electrode

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Embodiment 1

[0033] A kind of water-oxygen stable organic electrode, its preparation method comprises the following steps:

[0034] 1) Prepare the concentration of benzothiadiazole carbazole as 2.5×10 -4 mol / L, tetraethylammonium tetrafluoroborate concentration of 0.1mol / L electrolyte, the solvent in the electrolyte is made by mixing ultra-dry dichloromethane and ultra-dry acetonitrile according to the volume ratio of 3:2, and then glassy carbon Substrate as working electrode, platinum disk as counter electrode, Ag / Ag + The electrode is used as a reference electrode, and a cyclic voltammetry scan is performed under a nitrogen atmosphere. The potential range of the scan is -0.5V to 1.2V, the number of scan cycles is 8, and the scan speed is 100mV / s. The electrochemical polymerization curve is as figure 1 As shown, the glassy carbon substrate was rinsed with dichloromethane and acetonitrile respectively, and then placed in an oven at 120°C for 1 hour to obtain a glassy carbon substrate dep...

Embodiment 2

[0048] A kind of water-oxygen stable organic electrode, its preparation method comprises the following steps:

[0049] 1) The concentration of anthraquinone carbazole is prepared to be 2.5×10 -4 mol / L, the concentration of tetraethylammonium tetrafluoroborate is 0.1mol / L electrolyte, the solvent in the electrolyte is ultra-dry dichloromethane, then the glassy carbon substrate is used as the working electrode, the platinum disk is used as the counter electrode, Ag / Ag + The electrode is used as a reference electrode, and a cyclic voltammetry scan is performed under a nitrogen atmosphere. The potential range of the scan is -0.5V to 1.2V, the number of scan cycles is 15, and the scan speed is 100mV / s. The electrochemical polymerization of anthraquinone carbazole curve like image 3 As shown, the glassy carbon substrate was rinsed with dichloromethane and acetonitrile respectively, and then placed in an oven at 120°C for 1 hour to obtain a glassy carbon substrate deposited with ...

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Abstract

The invention discloses an organic electrode with stable water and oxygen as well as a preparation method and application of the organic electrode. The organic electrode is composed of an n-type organic semiconductor material of which the LUMO energy level is not lower than-3.6 eV and an n-type dopant of which the HOMO energy level is higher than-3.6 eV. The preparation method comprises the following steps: 1) preparing the n-type organic semiconductor material through electrochemical in-situ polymerization; and 2) realizing doping of the n-type organic semiconductor material by the n-type dopant through negative electrochemical scanning. The organic electrode is composed of an n-type organic semiconductor material of which the LUMO energy level is not lower than-3.6 eV and an n-type dopant of which the HOMO energy level is higher than-3.6 eV, the n-type dopant with low ionization energy can effectively capture electron traps formed by residual water oxygen in a solvent to inactivate the electron traps, and free electrons generated when the electrode material works are prevented from being captured by the n-type dopant; finally, the stability of the electrode material can be improved.

Description

technical field [0001] The invention relates to the technical field of organic semiconductors, in particular to a water-oxygen stable organic electrode and its preparation method and application. Background technique [0002] Organic materials have the characteristics of light weight, abundant sources, and good flexibility, and are widely used in optoelectronic fields such as organic light-emitting diodes, field-effect transistors, solar cells, supercapacitors, and secondary batteries. However, organic materials are prone to oxidation reactions, are sensitive to moisture and oxygen, and suffer from poor long-term stability, which limits their development and applications. [0003] In recent years, researchers have improved the stability of organic materials to a certain extent by inhibiting material dissolution, increasing chemical structure stability, and optimizing electrode morphology. However, the content of water and oxygen in organic materials is inseparable from its ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/30H01G11/86H01M4/04H01M4/60
CPCH01G11/30H01G11/86H01M4/602H01M4/04Y02E60/10
Inventor 张环环赵曼琳马於光
Owner SOUTH CHINA UNIV OF TECH
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