Semiconductor epitaxial wafer and method for manufacturing same

A technology of epitaxial wafers and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as insufficient, heavy metal pollution of semiconductor substrates, etc., and achieve the effect of high gettering capacity
CN113454756APending Publication Date: 2021-09-28SUMCO CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SUMCO CORP
Publication Date
2021-09-28

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Abstract

The present invention provides a method for manufacturing a semiconductor epitaxial wafer having higher gettering capability. This method for manufacturing a semiconductor epitaxial wafer 100 is characterized by having: a first step in which the surface 10A of a semiconductor wafer 10 is irradiated with cluster ions 12 including carbon, oxygen, and nitrogen as constituent elements, and a modification layer 14 is formed on the surface part of the semiconductor wafer 10, the modification layer 14 being such that the constituent elements of the cluster ions are in solid solution; and a second step in which an epitaxial layer 16 is formed on the modification layer 14 of the semiconductor wafer 10.
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Description

technical field

[0001] The invention relates to a semiconductor epitaxial wafer and a manufacturing method thereof. Background technique

[0002] Semiconductor epitaxial wafers formed with epitaxial layers on semiconductor wafers represented by silicon wafers are used to make MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), DRAMs (Dynamic Random Access Device substrates for various semiconductor devices such as dynamic random access memory (Dynamic Random Access Memory), power transistors, and back-illuminated solid-state imaging devices.

[0003] Among them, metal contamination is cited as a main factor deteriorating the characteristics of semiconductor devices. For example, in a back-illuminated solid-state imaging device, metal mixed into a semiconductor epitaxial wafer serving as a substrate of the device becomes a factor that increases the dark current of the solid-state imaging device, causing a defect called a white damage defect. The back-illuminated s...

Claims

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