Target material assembly as well as preparation method and application thereof

A target and component technology, which is applied in the field of sputtering targets, can solve the problems of low bonding strength, cracking, and brittle joints between the target and the back plate, and achieve good industrial application prospects, simple process flow, and reduced difficulty. Effect

Active Publication Date: 2021-10-01
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, as an active metal, titanium-aluminum alloy has many problems in the welding process: (1) titanium-aluminum alloy has a high affinity with oxygen, and a stable oxide film is easily formed on the surface, which affects the wetting and spreading of the solder; ( 2) Titanium-aluminum alloy has a tendency to adsorb hydrogen, oxygen and nitrogen during heating, and the higher the temperature, the more serious the adsorption, so that its plasticity and toughness decrease sharply; (3) Titanium-aluminum alloy can occur with most solders Chemical reaction produces brittle compounds, causing the joint to become brittle; (4) Titanium-aluminum alloy will undergo phase transformation and grain coarsening when heated, and the higher the temperature, the more serious the coarsening; (5) If the titanium-aluminum alloy target Direct hot isostatic welding with the back plate, the titanium-aluminum alloy target is prone to cracking under high pressure, and the bonding strength between the target and the back plate will not be high under low pressure, when the target component is sputtered on the sputtering machine There is a risk of desoldering and dropping
This method needs to make a pure aluminum cover plate with matching size in the early stage, and it needs to be removed after the welding is completed in the later stage, which increases the production cost and is not suitable for industrial production.

Method used

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  • Target material assembly as well as preparation method and application thereof
  • Target material assembly as well as preparation method and application thereof
  • Target material assembly as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] This embodiment provides a target assembly and its preparation method, the schematic diagram of the front view structure of the target assembly is as follows figure 1 As shown, the enlarged picture of circle A is shown in figure 2 shown.

[0076] The target assembly includes a target body 1, an intermediate layer 2, and a target back plate 3 connected to the target body 1 through the intermediate layer 2; the target body 1 is titanium with an electrical conductivity of 3 ms / m Aluminum alloy (Ti-50at%Al) with a diameter of 454mm; the middle layer 2 is A1060 aluminum, and the target back plate 3 is A6061 aluminum with a conductivity of 24ms / m, with a diameter of 524mm.

[0077] The target body 1 includes a sputtering surface 4, a main body side 6 connected to the sputtering surface 4 through a first chamfer 5, a main body sandblasting surface connected to the main body side 6 through a second chamfer 7, and The welding surface opposite to the sputtering surface 4; the ...

Embodiment 2

[0087] This embodiment provides a target assembly and its preparation method. The target assembly includes a target body 1, an intermediate layer 2, and a target back plate 3 connected to the target body 1 through the intermediate layer 2. The target body 1 is titanium-aluminum alloy (Ti-50at%Al) with a conductivity of 5ms / m and a diameter of 454mm; the middle layer 2 is A1060 aluminum, and the target back plate 3 is A6061 with a conductivity of 26ms / m Aluminum with a diameter of 524mm.

[0088] The target body 1 includes a sputtering surface 4, a main body side 6 connected to the sputtering surface 4 through a first chamfer 5, a main body sandblasting surface connected to the main body side 6 through a second chamfer 7, and The welding surface opposite to the sputtering surface 4; the radius of the first chamfer 5 is 1.2mm, and the radius of the second chamfer 7 is 0.8mm;

[0089] The edge of the sputtering surface 4 of the target body 1 is provided with a radially outward a...

Embodiment 3

[0098] This embodiment provides a target assembly and its preparation method. The target assembly includes a target body 1, an intermediate layer 2, and a target back plate 3 connected to the target body 1 through the intermediate layer 2. ; The target body 1 is titanium-aluminum alloy (Ti-50at%Al) with a conductivity of 4ms / m and a diameter of 454mm; the middle layer 2 is A1060 aluminum, and the target back plate 3 is A6061 with a conductivity of 25ms / m Aluminum with a diameter of 524mm.

[0099] The target body 1 includes a sputtering surface 4, a main body side 6 connected to the sputtering surface 4 through a first chamfer 5, a main body sandblasting surface connected to the main body side 6 through a second chamfer 7, and The welding surface opposite to the sputtering surface 4; the radius of the first chamfer 5 is 1.7mm, and the radius of the second chamfer 7 is 1.2mm;

[0100] The edge of the sputtering surface 4 of the target body 1 is provided with a radially outward...

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Abstract

The invention provides a target material assembly as well as a preparation method and application thereof. The target material assembly comprises a target material main body, a middle layer and a target material back plate connected with the target material main body through the middle layer, wherein the target material main body comprises a sputtering surface, a main body side surface connected with the sputtering surface through a first chamfer, a main body sand blasting surface connected with the main body side surface through a second chamfer, and a welding surface opposite to the sputtering surface; a thread is arranged on the welding surface; one surface, connected with the middle layer, of the target material back plate is a front surface; a groove concentric with the target material back plate is formed in the front surface of the target material back plate; a thread is arranged at the bottom of the groove; and the middle layer is arranged in the groove. According to the target material assembly, the overall structure is optimized, the welding combination law and the welding combination strength between the target material body and the target material back plate are improved, the situation that the titanium-aluminum alloy target material cracks in the welding process is reduced, and industrial production is facilitated.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, and in particular relates to a target component and its preparation method and application. Background technique [0002] Nowadays, the demand for mobile data is showing an explosive growth trend. The existing mobile communication systems and equipment are difficult to meet the huge demand in the future. Therefore, the development of a new 5G communication technology is imminent. New communication technologies have higher requirements for the integrated circuit industry. Metal thin films are strategic materials that play a core supporting role in the electronic information industry, and sputtering targets are key source materials for preparing metal thin films, which are mainly used in electronics and information industries, such as integrated circuits, information storage, liquid crystal displays, Laser memory, electronic control devices, etc. As a kind of magnetron sputtering targe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23P15/00C23C14/34
CPCB23P15/00C23C14/34
Inventor 姚力军边逸军潘杰王学泽章丽娜
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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