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Preparation method and application of gamma '-Fe4N magnetic porous membrane

A porous film, -fe4n technology, applied in the field of preparation of γ′-Fe4N magnetic porous film, can solve the problems of non-porosity, low specific surface area and high cost of the film, so as to facilitate reuse after recycling, improve catalytic efficiency, The effect of increasing the specific surface area

Pending Publication Date: 2021-10-12
甘肃省科学院传感技术研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] 1. Low purity, such as prepared γ′-Fe 4 N film is a mixed phase, mixed with Fe 3 N etc.;
[0007] 2. Low specific surface area, such as prepared γ′-Fe 4 N thin film is not porous;
[0008] 3. High cost, such as the use of high-cost MgO substrates

Method used

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  • Preparation method and application of gamma '-Fe4N magnetic porous membrane
  • Preparation method and application of gamma '-Fe4N magnetic porous membrane
  • Preparation method and application of gamma '-Fe4N magnetic porous membrane

Examples

Experimental program
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Effect test

Embodiment 1

[0036] A γ′-Fe 4 The preparation method of N magnetic porous film, comprises the following steps:

[0037] Step 1, the surface of the N-type silicon substrate is ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes, so that the surface of the silicon wafer is bright, clean, and hydrophobic, and then dried with a nitrogen gun to obtain the pretreated Silicon substrate;

[0038] Step 2, performing magnetron sputtering coating on the silicon substrate after the treatment, the process parameters of the magnetron sputtering coating are: the magnetron sputtering coating adopts Fe target material, when the magnetron sputtering coating starts The base pressure of the vacuum chamber is lower than 1×10 -5 Pa, reduce the oxygen content in the air, use nitrogen as the working gas, the gas flow rate is 20sccm, the sputtering pressure is 0.5Pa, the sputtering power is 45W, the sputtering rate is controlled at about 0.1nm / min, and the sputtering temperature is n...

Embodiment 2

[0044] A γ′-Fe 4 The preparation method of N magnetic porous film, comprises the following steps:

[0045] Step 1, the surface of the N-type silicon substrate is ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes, so that the surface of the silicon wafer is bright, clean, and hydrophobic, and then dried with a nitrogen gun to obtain the pretreated Silicon substrate;

[0046] Step 2, performing magnetron sputtering coating on the silicon substrate after the treatment, the process parameters of the magnetron sputtering coating are: the magnetron sputtering coating adopts Fe target material, when the magnetron sputtering coating starts The base pressure of the vacuum chamber is lower than 1×10 -5 Pa, reduce the oxygen content in the air, use nitrogen as the working gas, the gas flow rate is 10sccm, the sputtering pressure is 0.08Pa, the sputtering power is 45W, the sputtering rate is controlled at about 0.1nm / min, and the sputtering temperature is ...

Embodiment 3

[0051] A γ′-Fe 4 The preparation method of N magnetic porous film, comprises the following steps:

[0052] Step 1, the surface of the N-type silicon substrate is ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes, so that the surface of the silicon wafer is bright, clean, and hydrophobic, and then dried with a nitrogen gun to obtain the pretreated Silicon substrate;

[0053] Step 2, performing magnetron sputtering coating on the silicon substrate after the treatment, the process parameters of the magnetron sputtering coating are: the magnetron sputtering coating adopts Fe target material, when the magnetron sputtering coating starts The base pressure of the vacuum chamber is lower than 1×10 -5 Pa, reduce the oxygen content in the air, use nitrogen as the working gas, the gas flow rate is 20sccm, the sputtering pressure is 0.1Pa, the sputtering power is 45W, the sputtering rate is controlled at about 0.1nm / min, and the sputtering temperature is n...

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Abstract

The invention discloses a preparation method of a gamma '-Fe4N magnetic porous membrane. The preparation method comprises the following steps that 1, the surface of a silicon substrate to is cleaned and dried to obtain a pretreated silicon substrate; 2, the treated silicon substrate is subjected to magnetron sputtering coating, a Fe target material is adopted for magnetron sputtering coating, nitrogen serves as working gas, the sputtering temperature is normal temperature, a non-magnetic high-nitrogen-phase iron nitride film is obtained, and high-nitrogen-phase iron nitride in the non-magnetic high-nitrogen-phase iron nitride film is FexN; 3, magnetic annealing treatment is conducted on a non-magnetic high-nitrogen-phase iron nitride thin film material, specifically, the magnetic annealing treatment is vacuum magnetic annealing, heat preservation is conducted for preset time at the preset annealing temperature so that redundant nitrogen in the high-nitrogen-phase iron nitride can be released, holes can be formed, after cooling, a gamma '-Fe4N magnetic porous membrane is obtained, the purity of the nitrogen is 99.99% or above, and the purity of the Fe target material is 99.9 wt% or above.

Description

technical field [0001] The invention belongs to the technical field of inorganic materials, in particular to a γ'-Fe 4 Preparation method and application of N magnetic porous film. Background technique [0002] γ′-Fe 4 N has great application prospects in the field of magnetoelectronic devices due to its excellent magnetic properties, corrosion resistance, and high spin polarizability. In addition, iron nitride is also an excellent catalyst material in the ammonia synthesis industry. At present, γ′-Fe ​​can be prepared by molecular beam epitaxy, pulsed laser deposition and magnetron sputtering. 4 N film material. [0003] Chinese invention patent application (CN105925937A) discloses a method for preparing an oriented film, which uses pulsed laser deposition to control the phase structure of the film by controlling the magnetic field, deposition temperature and nitrogen gas pressure at the substrate, and then obtains a series of Iron nitride films with different phase co...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35C23C14/58H01F41/18H01L29/66B01J27/24B01J35/10
CPCC23C14/0641C23C14/0036C23C14/35C23C14/5806H01F41/18H01L29/66984B01J27/24B01J35/33B01J35/60
Inventor 卢启海韩根亮宋玉哲王向谦谢明玲
Owner 甘肃省科学院传感技术研究所
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