Method for removing impurity peaks in quantum dot emission spectrum

A technology for quantum dots and impurity peaks is applied in the field of removing impurity peaks in the emission spectrum of quantum dots to avoid adverse effects.

Active Publication Date: 2021-10-22
合肥福纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Impurity peaks will cause various adverse effects during the later growth of the shell

Method used

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  • Method for removing impurity peaks in quantum dot emission spectrum
  • Method for removing impurity peaks in quantum dot emission spectrum
  • Method for removing impurity peaks in quantum dot emission spectrum

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preparation example Construction

[0049] Taking the preparation of CdSe quantum dots as an example, the quantum dot cation element provider can be cadmium oxide, the first ligand can be provided by octaester orthophosphate, tri-n-octylphosphine oxide or oleic acid (preferably octaester orthophosphate), and the solvent Can be provided by octadecene. Using octadecene as a solvent can raise the temperature of the mixed system of the above three substances to a higher temperature, such as 280-300°C. The quantum dot anion element provider can be selenium simple substance, and the second ligand can be tri-n-octylphosphine.

[0050] Specifically, refer to: add 1mmoL cadmium oxide (CdO), 2mmoL octadecyl orthophosphate (ODPA), and 20mL octadecene (ODE) to the three-necked flask, and blow with argon for 20 minutes at room temperature, and then Heat at 20°C / min to 110-180°C and keep warm for 30min. Afterwards, the temperature was raised to 300° C., and 1.5 mmoL of selenium element-tri-n-octylphosphine (Se-TOP) solution...

Embodiment 1

[0058] This embodiment provides a method for removing impurity peaks in the quantum dot emission spectrum, comprising the following steps:

[0059] Preparation of CdSe quantum dots: Add 1mmoL of cadmium oxide (CdO), 2mmoL of octadecyl orthophosphate (ODPA) and 20mL of octadecene (ODE) into the three-necked bottle, and purge with argon for 20min at room temperature, and then 20mL Heat at ℃ / min rate to 110℃ and keep warm for 30min. Afterwards, the temperature was raised to 300° C., and 1.5 mmoL of selenium element-tri-n-octylphosphine (Se-TOP) solution was quickly injected into the three-necked bottle under the liquid surface to form a reaction solution with CdSe quantum dot nanocrystal nuclei. Incubate until the wavelength shifts to 580nm and stop the reaction immediately. The CdSe quantum dots are then cleaned.

[0060] Cleaning the CdSe quantum dots: using absolute ethanol as the precipitant and n-hexane as the solvent, the quantum dot solution was subjected to the first pa...

Embodiment 2

[0064] Preparation of CdSe quantum dots: Add 1mmoL of cadmium oxide (CdO), 2mmoL of tri-n-octylphosphine oxide (TOPO) and 20mL of octadecene (ODE) into the three-necked flask, and purging with argon for 15min at room temperature, and then Heating at a rate of 18°C / min to 150°C and holding for 25min. Afterwards, the temperature was raised to 280° C., and 1.5 mmoL of simple selenium-tri-n-octylphosphine (Se-TOP) solution was quickly injected into the three-necked bottle under the liquid surface to form a reaction solution with CdSe quantum dot nanocrystal nuclei. Incubate until the wavelength shifts 600nm and stop the reaction immediately. The CdSe quantum dots are then cleaned.

[0065] Cleaning the CdSe quantum dots: using absolute ethanol as the precipitant and n-hexane as the solvent, the quantum dot solution was subjected to the first pass of centrifugal precipitation (centrifugal speed: 4000rmp / s). Subsequently, the precipitate was dispersed in a n-hexane solution to rem...

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Abstract

The invention discloses a method for removing impurity peaks in a quantum dot emission spectrum, and belongs to the technical field of semiconductors. The method comprises the following steps: freezing a quantum dot solution to precipitate quantum dots corresponding to impurity peaks, and then removing precipitates, wherein quantum dots in the quantum dot solution comprise at least one of II-VI group quantum dots and III-V group quantum dots, and a first ligand coordinated with quantum dot cation elements in the quantum dot solution comprises tri-n-octyl phosphine oxide, octadecyl ortho-phosphate or oleic acid. According to the method, impurity peaks in the quantum dot emission spectrum can be effectively removed, and later growth of quantum dots is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for removing impurity peaks in quantum dot emission spectra. Background technique [0002] Quantum dots (QDs), also known as semiconductor nanocrystals, are nanoparticles composed of II-VI or III-V elements, with a diameter of about 1-100 nm. Due to the small size of QDs, it has special small size effect, surface effect, quantum size effect and macroscopic quantum tunneling effect. Quantum dots exhibit unique optical properties, such as high quantum yield, long fluorescence lifetime, large extinction coefficient, strong light tolerance, narrow emission spectrum and wide excitation spectrum range, etc. The preparation and application of quantum dots have aroused widespread research interest, and have broad application prospects in the fields of biomedicine and optoelectronics. [0003] The quantum dots synthesized by the Cd-ODPA system usually have a narrow peak ...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/56B82Y20/00B82Y40/00
CPCC09K11/883C09K11/565B82Y20/00B82Y40/00
Inventor 孙培川宋斌梁凯旋
Owner 合肥福纳科技有限公司
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