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A method for detecting the stability of chain pecvd coating process

A detection method and stability technology, which is applied in the field of detection of the stability of the chain PECVD coating process, can solve the problems of long time for detecting battery electrical parameters, increased production cost, and poor coating effect, so as to prevent the test results from being inconsistent. Accurate, cost-saving, improved accuracy and reliability effects

Active Publication Date: 2022-07-01
YINGLI ENERGY CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, regular maintenance of the coating equipment cannot intuitively monitor the actual effect of the coating. The reasons are as follows: 1) The coating effect may have deteriorated before the maintenance time. The film has been transferred to the next process, and the photoelectric conversion efficiency of the final solar cell is reduced, the number of unqualified products increases, and the production cost increases; 2) Although the maintenance time of the coating equipment may be reached, the coating effect is still very stable, which can extend the maintenance time of the equipment ,save costs
[0004] The measurement of the refractive index of the film thickness itself has a certain range requirement, has limitations, and cannot directly reflect the passivation effect of the coating; although the battery electrical parameters can directly reflect the coating effect, it takes a long time to detect the battery electrical parameters. After completion, the preparation of the subsequent process still needs to be circulated (such as figure 1 Shown), the final performance test of the solar cell can be done to obtain the battery electrical parameters. If the battery electrical parameters become worse, it means that the coating effect is poor. During this period, the coating process is still going on, which will lead to more unqualified products Generation, corresponding to the consumption of more high-cost auxiliary materials (such as silver paste used for printing electrode grid lines, etc.), which virtually increases the production cost

Method used

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  • A method for detecting the stability of chain pecvd coating process
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  • A method for detecting the stability of chain pecvd coating process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] The present embodiment provides a method for detecting the stability of a chain PECVD coating process, comprising the following steps:

[0072] S1, cashmere

[0073] Soak the silicon wafer in a mixed solution of potassium hydroxide and hydrogen peroxide at 75°C for 300s to remove the damage layer on the surface of the silicon wafer introduced by cutting, and then put the above-mentioned surface-treated silicon wafer into an aqueous solution of potassium hydroxide After soaking for 600 s, the silicon wafer is etched to generate a random pyramid structure, that is, the textured silicon wafer is obtained.

[0074] Among them, the mixed solution of potassium hydroxide and hydrogen peroxide is composed of 3wt% KOH solution, 3wt% H 2 O 2 The solution is mixed with deionized water at a volume ratio of 1:9:100; the aqueous potassium hydroxide solution is obtained by mixing a 3wt% KOH solution with deionized water at a volume ratio of 3:50.

[0075] S2. Diffusion

[0076] Pu...

Embodiment 2

[0092] This embodiment provides a method for detecting the stability of a chain PECVD coating process. This embodiment is similar to Embodiment 1, with the only difference being:

[0093] 1) During sintering, the coated silicon wafers completed in the 30th and 98th hours of a coating cycle in S4 are selected.

[0094] 2) During the test, the semi-finished products obtained by S5 are subjected to PL and J respectively. 0 The test conditions were the same as those in Example 1.

[0095] The specific test results are shown in Table 2:

[0096] Table 2 Test results

[0097]

[0098] Note: D 2 The light-induced decay rate measured for 98h and 30h.

[0099] It can be seen from the data in the above table that when the equipment runs for 98h, compared with 30h, D 2 less than 10%, J 0 The center and edge test values ​​did not increase by more than 5fA / cm relative to the 30h sampling sample test value 2 , Combined with the test results of uniform brightness in the PL picture,...

Embodiment 3

[0101] This embodiment provides a method for detecting the stability of a chain PECVD coating process. This embodiment is similar to Embodiment 1, with the only difference being:

[0102] 1) During sintering, the coated silicon wafers completed in the 30th, 90th, and 120h of a coating cycle in S4 are selected.

[0103] 2) During the test, the semi-finished product obtained by S5 was tested for PL and iVoc respectively, and the test conditions were the same as those in Example 1.

[0104] The specific test results are shown in Table 3:

[0105] Table 3 Test results

[0106]

[0107]

[0108] Note: D 2 is the light-induced decay rate measured at 90h and 30h, and D3 is the light-induced decay rate measured at 120h and 30h.

[0109] From the data in the above table, it can be seen that the sampling test is carried out at 90h, D 2 If it is less than 10%, the corresponding value of the iVoc test data center and edge does not decrease by more than 10mV compared with the tes...

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Abstract

The invention relates to a method for detecting the stability of a chain PECVD coating process. The detection method comprises the following steps: taking coated silicon wafers completed at different time points under the same coating process, and sintering them to obtain semi-finished products; respectively conducting PL and recessive open circuits on the semi-finished products. Voltage test, or PL and saturation current density test, or PL and recessive open circuit voltage, saturation current density test; evaluate the stability of the chain PECVD coating process at different time points according to the test results; The process of each process at the front end of the chip is consistent; at least one time point in different time points is selected from the 0-3 / 5 time period of the entire coating process cycle; the conditions for PL, recessive open circuit voltage, and saturation current density tests for each semi-finished product are consistent. . By testing the semi-finished product, the detection method can conveniently, quickly and intuitively reflect the stability of the chain PECVD coating process and save the production cost.

Description

technical field [0001] The invention belongs to the technical field of solar cell preparation, and in particular relates to a method for detecting the stability of a chain PECVD coating process. Background technique [0002] In the production process of solar cells, PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) is one of the important steps, its purpose is to form a layer of anti-reflection and passivation film on the surface of the silicon wafer. The effect of the thin film will directly affect the photoelectric conversion efficiency of the solar cell, thereby affecting the performance and reliability of the cell. [0003] In order to ensure the effect of PECVD coating, the current traditional method is to regularly maintain the coating equipment, or supplemented with film thickness refractive index measurement and battery electrical parameter fluctuation data. Among them, regular maintenance of coating equipment cannot...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/14H01L22/12H01L22/20
Inventor 王红芳徐卓赵学玲潘明翠陈志军田思李锋史金超李倩
Owner YINGLI ENERGY CHINA
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