Gallium nitride wafer material containing insulating substrate and preparation and application thereof
A technology of gallium nitride wafers and insulating substrates, which is used in semiconductor/solid-state device manufacturing, electrical components, and electrical solid-state devices. Heat generation and power dissipation, the effect of reducing parasitic effects
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Embodiment 1
[0090] refer to figure 2 , prepare the GOI wafer material by the following steps:
[0091] Using the MOCVD method, a 500nm-thick undoped GaN buffer layer (growth conditions: 480°C, 40Torr) was sequentially grown on a sapphire substrate, with a thickness of 1.5μm and a Si doping concentration of 1×10 19 cm -3 GaN sacrificial layer (growth condition: 980°C, 40Torr), 500nm thick undoped single crystal GaN layer (growth condition: 980°C, 40Torr), to obtain the basic sample with epitaxial structure;
[0092] Weigh 4g of polyvinyl alcohol and mix it with 21ml of deionized water, stir magnetically for more than 8 hours to form PVA glue; apply the prepared PVA glue onto the Si substrate (substrate 1), and apply the PVA glue on the Si substrate The bottom is reversed to the upper surface (+c surface) of the single crystal GaN layer, and heated on a hot stage at 50°C for 10 minutes to complete the bonding;
[0093] The bonded sample was fixed to the anode of the electrolytic cell, a...
Embodiment 2
[0097] refer to image 3 , prepare the GOI wafer material by the following steps:
[0098] Using the MOCVD method, a 500nm-thick undoped GaN buffer layer (growth conditions: 480°C, 40Torr) was sequentially grown on a sapphire substrate, with a thickness of 1.5μm and a Si doping concentration of 1×10 19 cm -3 GaN sacrificial layer (growth condition: 980°C, 40Torr), 500nm thick undoped single crystal GaN layer (growth condition: 980°C, 40Torr), to obtain the basic sample with epitaxial structure;
[0099] Spin-coat a layer of photoresist with a thickness of 2 μm on the upper surface of the single crystal GaN layer to obtain a photoresist layer; expose the photoresist layer to the photoresist layer with a pattern mask designed in advance, and then put it into the developer Developing and drying to obtain a sample containing a graphic mask;
[0100] Using the pattern as a mask, the single crystal GaN layer was etched by ICP with an etching depth of 300nm, and the etched product...
Embodiment 3
[0108] The single crystal GOI wafer is prepared by the same process as in Example 1, the difference is that the substrate 1 uses a flexible substrate material, such as a polyethylene terephthalate substrate or a copper foil substrate, and simultaneously does not use The process of substrate 1 is used as a comparison, and can be obtained as attached Figure 5-6 The schematic diagram of the integrity of the single-crystal GaN layer is shown. It can be seen that the use of Si substrates or flexible substrates can effectively reduce the phenomenon of cracking, curling, and folding of the single-crystal GaN layer during the electrochemical corrosion process. The effect of the substrate is the best, and finally the best quality single crystal layer can be obtained, so that the product has excellent crystallinity and surface quality.
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Abstract
Description
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Application Information
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