Single crystal film doped with methylamine lead iodine at lead position, and preparation method thereof

A single crystal thin film, methylamine lead iodine technology, applied in-situ doping methylamine lead iodine single crystal thin film and its preparation field, can solve the problems of inability to separate dopant precursors, slow crystallization speed, mixing of impurities into the host lattice, etc. problems, to achieve the effects of easy control of the preparation process, reduced toxicity, and high repeatability

Active Publication Date: 2021-11-02
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are many limitations and challenges in heterogeneous doping-related crystal growth techniques. For example, the use of anti-solvent vapor-assisted crystallization requires the selection of solvent-anti-solvent combinations suitable for all precursors. In addition, crystal grow

Method used

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  • Single crystal film doped with methylamine lead iodine at lead position, and preparation method thereof
  • Single crystal film doped with methylamine lead iodine at lead position, and preparation method thereof
  • Single crystal film doped with methylamine lead iodine at lead position, and preparation method thereof

Examples

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preparation example Construction

[0028]The preparation method of the lead position doped methylamine lead iodine single crystal thin film of the present invention comprises the following steps:

[0029] Step 1, the methyl ammonium iodide (CH 6 IN), lead iodide (PbI 2 ) and iodides of doping elements (SmI 3 , LaI 3 , or PrI 2 ) according to the molecular formula of the obtained single crystal film, using N,N-dimethylformamide (DMF) or γ-butyrolactone (GBL) as a solvent, stirring and heating on a hot stage at 60°C and 1000r / min for 12 Hour. After filtering and cleaning with a 0.20 μm polytetrafluoroethylene filter, the resulting solution was placed in an oil bath at 100° C. for heating and growing for 3 hours to obtain a precursor solution containing methylamine lead iodide crystals.

[0030] Step 2: Preheat the substrate (polyimide PI) to 75°C, spread the precursor solution obtained in step 1 evenly on the clean substrate and let it stand for 15 seconds, then spin-coat to obtain a film, in which the cloth...

Embodiment 1

[0033] A lead-doped methylamine-lead-iodide single crystal thin film and a preparation method thereof, the molecular formula of the single crystal thin film is CH 3 NH 3 Pb 0.994 La 0.004 I 3 , the specific preparation steps are as follows:

[0034] Step 1, the methyl ammonium iodide (CH 6 IN), lead iodide (PbI 2 ) and lanthanum iodide (LaI 3 ), and using N,N-dimethylformamide (DMF) as a solvent, stirred on a hot stage at 60° C. and 1000 rpm for 12 hours. Use a 0.20 μm polytetrafluoroethylene filter to filter and clean the solution with a concentration of 0.5 mol / L. Put the solution into an oil bath at 100° C. and heat it for growth for 3 hours to obtain a precursor solution containing methylamine lead iodide crystals.

[0035] Step 2: preheat the substrate to 75°C, the substrate is preferably polyimide (PI). Spread the precursor solution evenly on a clean substrate and let it stand for 15 seconds before spin-coating to obtain a uniform lead-doped methylamine-lead-iod...

Embodiment 2

[0040] The lead-doped methylamine-lead-iodine single crystal thin film of this example and its preparation method are the same as those of Example 1, except that γ-butyrolactone (GBL) is used as a solvent in step 1 of this example.

[0041] The important parameter conditions involved in this embodiment are shown in Table 1, including doping elements, doping amount, precursor solution concentration and growth time. The saturation polarization is 14.2μC / cm 2 , the remnant polarization is 8.7μC / cm 2 , the piezoelectric coefficient d measured along the (100) direction 33 is 4.3pm / V, and the hole mobility is 44.72cm 2 V -1 the s -1 , with a hole mobility of 70.55 cm 2 V -1 the s -1 ,As shown in table 2.

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Abstract

The invention discloses a single crystal film doped with methylamine lead iodine at the lead position, and a preparation method thereof. The single crystal film takes CH3NH3PbI3 as a matrix, La is doped at the lead position to obtain the single crystal film with the molecular formula of CH3NH3Pb1-xLa2x/3I3 (x = 0.005-0.19), Sm is doped at the lead position to obtain the single crystal film with the molecular formula of CH3NH3Pb1-ySm2y/3I3 (x = 0.005-0.19), and Pr is doped at the lead position to obtain the single crystal film with the molecular formula of CH3NH3Pb1-zPrzI3 (z = 0.005-0.27). By doping La, Sm and Pr elements, the saturation polarization intensity, remanent polarization intensity, piezoelectric coefficient and mobility of carriers are effectively improved, the photoelectric property is greatly improved through lead site substitution, the toxicity caused by heavy metal lead is reduced, the process is simple, the preparation process is easy to control, and repeatability is high.

Description

technical field [0001] The invention belongs to the technical field of halogen perovskites, and relates to a single crystal thin film doped with methylamine lead iodine and a preparation method thereof. Background technique [0002] The special resistance configuration of rare earth ions determines its unique spectral behavior, which is also the internal reason for the formation of the physicochemical and electromagnetic properties of rare earth elements. La, Pr and Sm have many excellent properties as three doped rare earth elements. In 2019, Shkir et al. successfully fabricated a high-quality Pr:CdS film-based photodetector through a simple spray pyrolysis method. The responsivity (R), specific detection (D*), and external Both quantum efficiency values ​​(EQE) and photoelectric switching properties were enhanced, making Pr:CdS a high-quality photodetector (M Shkir, et al. A Noticeable Effect of Pr Dopingon Key Optoelectrical Properties of CdS Thin Films Prepared Using Sp...

Claims

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Application Information

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IPC IPC(8): C30B29/54C30B19/00
CPCC30B29/54C30B19/00
Inventor 曾寿信赵泽恩袁国亮
Owner NANJING UNIV OF SCI & TECH
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