Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of vanadium dioxide film based on nitrogen-hydrogen mixed gas generation device

A technology of nitrogen-hydrogen mixed gas and generating device, which is applied in the direction of mixing methods, chemical instruments and methods, mixers, etc., can solve the problems that the reducing atmosphere is prone to fluctuations and affects the quality of vanadium dioxide films, etc., and achieves low cost and repeatability Improved performance and better film quality

Active Publication Date: 2021-11-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem in the background technology that when the vanadium dioxide film is prepared by the PAD method, the reducing atmosphere tends to fluctuate during the heat treatment process, thereby affecting the quality of the vanadium dioxide film. The purpose of the present invention is to provide a device based on nitrogen-hydrogen mixed gas generation The preparation method of the vanadium dioxide thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of vanadium dioxide film based on nitrogen-hydrogen mixed gas generation device
  • Preparation method of vanadium dioxide film based on nitrogen-hydrogen mixed gas generation device
  • Preparation method of vanadium dioxide film based on nitrogen-hydrogen mixed gas generation device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A method for preparing a vanadium dioxide film based on the above device, comprising the following steps:

[0041] Step 1. adopt the PAD method to prepare the macromolecule precursor liquid containing vanadium ion, concrete process is: the polyetherimide (PEI) of 3.0g is dissolved in 60ml water, stirs the ethylenediaminetetraacetic acid (EDTA) of 3.0g after 30min EDTA), continue to stir until a uniform solution is formed, then add 1.2 g of ammonium metavanadate and stir in the solution for 30 minutes to form a transparent solution, and finally transfer the solution to an ultrafiltration device, adding 0.2 atmospheric pressure and magnetic stirring during filtration , to obtain the polymer precursor;

[0042] Step 2. Spin-coat the polymer precursor solution prepared in step 1 on the surface of the substrate, the specific process is; select crystal plane orientation as (10-10), sapphire (Al 2 o 3 ) as the substrate, the substrate was ultrasonically cleaned by acetone, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a vanadium dioxide film based on a nitrogen-hydrogen mixed gas generation device, and belongs to the technical field of vanadium dioxide film preparation. The PAD method is adopted for preparing the vanadium dioxide film. In view of the problem that the quality of a prepared vanadium dioxide film is affected due to the fact that the reducing atmosphere is prone to fluctuating in the heat treatment process, a set of reducing atmosphere generation device is arranged, so that a high-quality vanadium dioxide film can be obtained through reduction in a stable reducing atmosphere. A hydrogen concentration detector is arranged at the tube opening of a tubular furnace and connected with a voltage source of a hydrogen generation device, and the voltage of the voltage source can be automatically adjusted according to the concentration value change in the heat treatment process, so that the hydrogen generation speed is adjusted and the hydrogen concentration is controlled. When the external environment changes, the concentration of hydrogen in the furnace tube fluctuates in a small range, so that a stable heat treatment atmosphere is provided, the stoichiometric ratio of vanadium oxide is controlled, and a vanadium dioxide film with high repeatability and high quality is prepared.

Description

technical field [0001] The invention belongs to the technical field of vanadium dioxide thin film preparation, and in particular relates to a method for preparing vanadium dioxide thin film based on a nitrogen-hydrogen mixed gas generator. Background technique [0002] Vanadium dioxide has ultrafast, reversible and multi-stimuli-responsive phase transition properties, from monoclinic tetragonal phase to metallic phase can be completed by a variety of stimuli, including electrical, thermal, optical, electrochemical, mechanical and magnetic perturbations. A reversible metal-insulator (MIT) transition occurs at a critical temperature of 340K, and the resistance changes by 4 to 5 orders of magnitude during the transition, which is an oxide with strong electron-related properties. Below the transition temperature, VO 2 monoclinic structure And above the transition temperature, VO 2 is a tetragonal rutile structure Due to the unique phase transition properties, vanadium di...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/04C25B9/01C25B15/023C23C18/12B01F5/00B01F3/02B01F23/10
CPCC25B1/04C25B9/01C25B15/023C23C18/1216Y02E60/36
Inventor 高敏徐晨曦林媛路畅杨帆
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com