Preparation method of vanadium dioxide film based on nitrogen-hydrogen mixed gas generation device

Abstract

The invention provides a preparation method of a vanadium dioxide film based on a nitrogen-hydrogen mixed gas generation device, and belongs to the technical field of vanadium dioxide film preparation. The PAD method is adopted for preparing the vanadium dioxide film. In view of the problem that the quality of a prepared vanadium dioxide film is affected due to the fact that the reducing atmosphere is prone to fluctuating in the heat treatment process, a set of reducing atmosphere generation device is arranged, so that a high-quality vanadium dioxide film can be obtained through reduction in a stable reducing atmosphere. A hydrogen concentration detector is arranged at the tube opening of a tubular furnace and connected with a voltage source of a hydrogen generation device, and the voltage of the voltage source can be automatically adjusted according to the concentration value change in the heat treatment process, so that the hydrogen generation speed is adjusted and the hydrogen concentration is controlled. When the external environment changes, the concentration of hydrogen in the furnace tube fluctuates in a small range, so that a stable heat treatment atmosphere is provided, the stoichiometric ratio of vanadium oxide is controlled, and a vanadium dioxide film with high repeatability and high quality is prepared.

Description

technical field [0001] The invention belongs to the technical field of vanadium dioxide thin film preparation, and in particular relates to a method for preparing vanadium dioxide thin film based on a nitrogen-hydrogen mixed gas generator. Background technique [0002] Vanadium dioxide has ultrafast, reversible and multi-stimuli-responsive phase transition properties, from monoclinic tetragonal phase to metallic phase can be completed by a variety of stimuli, including electrical, thermal, optical, electrochemical, mechanical and magnetic perturbations. A reversible metal-insulator (MIT) transition occurs at a critical temperature of 340K, and the resistance changes by 4 to 5 orders of magnitude during the transition, which is an oxide with strong electron-related properties. Below the transition temperature, VO 2 monoclinic structure And above the transition temperature, VO 2 is a tetragonal rutile structure Due to the unique phase transition properties, vanadium di...

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Problems solved by technology

[0006] Aiming at the problem in the background technology that when the vanadium dioxide film is prepared by the PAD method, the reducing atmosphere tends to fluctuate during the heat treatment process, thereby affecting the quality of the vanadium dioxide film. The purpose of the present invention is to provide a device based on nitrogen-hydrogen mixed gas generation The preparation method of the vanadium dioxide thin film

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