AlN ultraviolet light-emitting diode based on nano pattern insertion layer, and preparation method thereof
A light-emitting diode and nano-pattern technology, applied in the field of microelectronics, can solve the problems of limited number of effective carriers, luminous efficiency of AlN ultraviolet LED devices less than 10%, application limitations, etc., so as to improve the probability of light output and improve light extraction. Efficiency, the effect of enhancing internal quantum efficiency
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Embodiment 1
[0022] See figure 1 , figure 1 It is a schematic structural diagram of an AlN ultraviolet light-emitting diode based on a nano-pattern insertion layer provided by an embodiment of the present invention. The AlN ultraviolet light-emitting diode includes from bottom to top: a patterned sapphire substrate, an AlN nano-pattern insertion layer, an AlN re-growth layer, n-type AlN layer, Al x Ga 1-x N / Al y Ga 1-y N multi-quantum well layer, Al z Ga 1-z N electron blocking layer, p-type AlN layer, p-type GaN contact layer, p-type electrode and n-type electrode; the surface of the AlN nano pattern insertion layer is covered with Ag first reflective layer and Ag second reflective layer.
[0023] Optionally, the patterned sapphire substrate is a C-plane patterned sapphire substrate; the thickness of the AlN nano-pattern insertion layer is 2-15um.
[0024] Optionally, the Ag first reflective layer and the Ag second reflective layer are metal materials; the thickness of the Ag first...
Embodiment 2
[0034] See figure 2 , figure 2 It is a schematic flow chart of a method for preparing an AlN ultraviolet light-emitting diode based on a nano-pattern insertion layer provided by an embodiment of the present invention, and the method includes:
[0035] Step 1: Perform heating and nitriding treatment on the patterned sapphire substrate in a preset reaction chamber based on pretreatment parameters, wherein the pretreatment parameters include preheating treatment parameters and nitriding treatment parameters.
[0036] Optionally, the patterned sapphire substrate is a C-plane patterned sapphire substrate.
[0037] Optionally, the step 1 includes:
[0038] Step 1-1: cleaning the patterned sapphire substrate.
[0039] Step 1-2: Preheating the cleaned patterned sapphire substrate based on the preheating parameters, wherein the preheating parameters include the vacuum degree of the reaction chamber, the first hydrogen flow rate, the first pressure of the reaction chamber, the subs...
Embodiment 3
[0086] Step 1: Perform heating and nitriding treatment on the patterned sapphire substrate in a preset reaction chamber based on pretreatment parameters, wherein the pretreatment parameters include preheating treatment parameters and nitriding treatment parameters.
[0087] Step 2: Based on the first growth parameter, grow the AlN nano-pattern insertion layer on the patterned sapphire substrate after nitriding treatment, wherein the first growth parameter includes the AlN layer growth parameter, the first thermal annealing parameter and the etching parameter .
[0088] The first growth parameter is set by those skilled in the art according to business needs, and it can be understood that the present invention does not make specific limitations thereto.
[0089] Optionally, the step 2 includes:
[0090] Step 2-1: Based on the AlN layer growth parameters, grow an AlN layer on the patterned sapphire substrate after nitriding treatment, wherein the AlN layer growth parameters inc...
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Abstract
Description
Claims
Application Information
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