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Rapid laser preparation method for flexible gallium nitride photoelectric detector

A photodetector, gallium nitride technology, applied in laser welding equipment, circuits, manufacturing tools, etc., can solve the problems of low removal efficiency, complex process, weak detection ability of flexible photodetectors, etc., to optimize device performance, simplify Preparation process, the effect of enhancing light absorption and light responsiveness

Active Publication Date: 2021-12-10
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chemical solution etching is easy to cause environmental pollution, low removal efficiency, complex process, not suitable for mass production
The detection ability of the flexible photodetector produced by the traditional method is weak, and it often needs to be coated with nanoparticles to improve its detection performance by means of the plasmon enhancement effect.

Method used

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  • Rapid laser preparation method for flexible gallium nitride photoelectric detector

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Embodiment 1

[0020] see figure 1 , a laser rapid fabrication method for a flexible gallium nitride photodetector provided in this embodiment includes the following steps:

[0021] 1) Bond the thermal release tape flexible substrate with the sapphire gallium nitride thin film epitaxial wafer to obtain a sapphire substrate / gallium nitride thin film / thermal release tape flexible substrate structure;

[0022] 2) Place the sapphire substrate / gallium nitride film / thermal release tape flexible substrate structure described in step 1) on a processing table at a fixed height below the light outlet, and set the focal plane of the laser beam between the sapphire substrate and gallium nitride at the interface of the film. Since the thickness of the gallium nitride epitaxial layer used is 4 μm, and the thickness of the thermal release tape flexible substrate is 500 μm, the focus position is set to 504 μm on the processing table, and the beam is incident from the side of the sapphire substrate. At this...

Embodiment 2

[0028] see figure 1 , a laser rapid fabrication method for a flexible gallium nitride photodetector provided in this embodiment includes the following steps:

[0029] 1) Bonding the PET flexible substrate and the sapphire gallium nitride thin film epitaxial wafer to obtain a sapphire substrate / gallium nitride thin film / PET flexible substrate structure;

[0030] 2) Place the sapphire substrate / gallium nitride film / PET flexible substrate structure described in step 1) on a processing table at a fixed height below the light outlet, and set the focal plane of the laser beam at the distance between the sapphire substrate and the gallium nitride film on the interface. Since the thickness of the gallium nitride epitaxial layer used is 4 μm, and the thickness of the PET flexible substrate is 250 μm, the focus position is set to 254 μm on the processing table, and the beam is incident from the side of the sapphire substrate. At this time, the spot size is 10 μm;

[0031] 3) Due to th...

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Abstract

The invention provides a rapid laser preparation method for a flexible gallium nitride photoelectric detector. The rapid laser preparation method comprises the following steps of (1) attaching a flexible substrate to a gallium nitride epitaxial wafer; (2) adjusting the focal plane position of a light beam, and ensuring that the light beam enters from one side of a gallium nitride epitaxial wafer substrate; (3) enabling the light beam to perform scanning irradiation from the edge of a sample structure obtained in the step (1); (4) adjusting process parameters, and scanning and irradiating along the reverse direction of a path in the step (3); (5) taking down the original rigid transparent substrate of the epitaxial wafer to obtain a Ga metal nanoparticle / gallium nitride film / flexible substrate structure; and (6) preparing interdigital electrodes on the surfaces of the Ga metal nanoparticles obtained in the step (5). The flexible gallium nitride photoelectric detector with the Ga metal nanoparticle in-situ distribution detection surface is prepared in one step through a laser technology, the process is simplified, meanwhile, the surface of the detector is induced to form the SPR effect, the light absorption and light response performance is greatly enhanced, and the flexible gallium nitride photoelectric detector is suitable for industrial production.

Description

technical field [0001] The invention belongs to the field of preparation of photodetector devices, and in particular relates to a rapid laser preparation method of a flexible gallium nitride photodetector. Background technique [0002] Exposure is the most critical process link in chip manufacturing lithography technology, which requires a certain intensity of ultraviolet light to selectively irradiate the photoresist through the mask. The UV exposure dose will directly affect the surface and edge precision of the photoresist developed pattern, and ultimately affect the chip manufacturing quality. The ultraviolet photodetector can effectively monitor the ultraviolet exposure in the lithography process, and improve the lithography precision through feedback adjustment. The currently widely used non-flexible UV photodetectors are mainly silicon-based UV photocells and photomultiplier tubes, which are bulky and easily damaged. As a new generation of ultraviolet photodetection...

Claims

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Application Information

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IPC IPC(8): B23K26/0622B23K26/082B23K26/70H01L31/18B23K101/40
CPCB23K26/0624B23K26/082B23K26/702H01L31/1856H01L31/1852H01L31/1892B23K2101/40Y02P70/50H01L31/108H01L31/03044H01L31/1896
Inventor 季凌飞孙伟高
Owner BEIJING UNIV OF TECH
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