Unlock instant, AI-driven research and patent intelligence for your innovation.

Laminated cell based on back contact and preparation method thereof

A stacked battery and back contact technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of poor cost performance and high unit price of low-temperature silver paste consumption, so as to prevent leakage and parasitic parallel resistance, reduce the cost of electricity, The effect of reducing consumption

Inactive Publication Date: 2021-12-10
南京日托光伏新能源有限公司
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] HIT (Heterojunction with Intrinsic Thinfilm) battery, also known as HJT battery, has the advantages of high conversion efficiency, low temperature coefficient, low attenuation, and good low light performance, but at present, the consumption of low-temperature silver paste and its unit price are relatively high, occupying the highest BOM cost Ratio, relatively poor cost performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laminated cell based on back contact and preparation method thereof
  • Laminated cell based on back contact and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0079] The invention provides a kind of MWT type perovskite HJT laminated battery product, refer to figure 1 with figure 2 , which includes from top to bottom: front gate electrode, front TCO, top electrode buffer layer, electron transport layer, perovskite light absorbing layer, hole transport layer, tunneling layer (ITO), N+ type doped amorphous Silicon layer n+-Si(a), first intrinsic amorphous silicon passivation layer i-Si(a), N-type single crystal silicon substrate n-Si(c), second intrinsic amorphous silicon passivation layer i-Si(a), p-type doped amorphous silicon layer p-Si(a), back TCO layer, back gate wire electrode.

Embodiment 2

[0081] The invention provides a kind of MWT type perovskite HJT laminated battery product, refer to figure 1 with figure 2 , which includes from top to bottom: front grid electrode, front TCO, top electrode buffer layer, electron transport layer, perovskite light absorbing layer, hole transport layer, tunneling layer (In 2 o 3 ), N+-type doped amorphous silicon layer n+-Si(a), the first intrinsic amorphous silicon passivation layer i-Si(a), N-type single crystal silicon substrate n-Si(c), the second Intrinsic amorphous silicon passivation layer i-Si(a), p-type doped amorphous silicon layer p-Si(a), back TCO layer, and back gate electrode.

Embodiment 3

[0083] The invention provides a kind of MWT type perovskite HJT laminated battery product, refer to figure 1 with figure 2 , which includes from top to bottom: front gate electrode, front TCO, top electrode buffer layer, electron transport layer, perovskite light-absorbing layer, hole transport layer, tunneling layer (p+ / n+ double-layer silicon film composition Tunneling junction), N+ type doped amorphous silicon layer n+-Si(a), first intrinsic amorphous silicon passivation layer i-Si(a), N-type single crystal silicon substrate n-Si(c ), a second intrinsic amorphous silicon passivation layer i-Si(a), a p-type doped amorphous silicon layer p-Si(a), a back TCO layer, and a back gate line electrode.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a laminated cell based on back contact and a preparation method thereof, and relates to the technical field of solar cell production. MWT, perovskite and HJT cell technologies are combined. The laminated cell comprises an HJT bottom cell and a perovskite top cell which are stacked. The HJT bottom cell sequentially comprises an N + type doped amorphous silicon layer, a first intrinsic amorphous silicon passivation layer, an N type monocrystalline silicon substrate, a second intrinsic amorphous silicon passivation layer, a P type doped amorphous silicon layer, a back TCO layer and a back grid line electrode from top to bottom. The perovskite top cell sequentially comprises a front grid line electrode, a front TCO layer, a top electrode buffer layer, an electron transport layer, a perovskite light absorption layer and a hole transport layer from top to bottom. According to the invention, MWT, perovskite and HJT cell technologies are combined, and the advantage that the perovskite-HJT laminated cell can expand the absorption spectrum is fully exerted, so that the efficiency limitation of a single-junction cell is broken.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a structural design and preparation method of a MWT type perovskite heterojunction laminated cell. Background technique [0002] A perovskite solar cell is a solar cell that uses a perovskite-type organic metal halide semiconductor as a light-absorbing material. From the principle of absorption, because the band gap of perovskite material is higher than that of silicon material, and the height is adjustable, it can more effectively use high-energy ultraviolet and blue-green visible light, and silicon solar cells can effectively use perovskite. Infrared light that is not absorbed by materials. Therefore, if these high-efficiency single cells can be combined by stacking, the theoretical efficiency limit of traditional silicon photovoltaic cells can be broken, and the efficiency of silicon photovoltaic cells will be further improved. [0003] The MWT (Metal Wrap Thro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/30H01L31/0224H01L31/0747H01L51/42H01L51/44
CPCH01L31/02245H01L31/0747H10K30/57H10K30/151H10K30/81H10K30/00Y02E10/549
Inventor 王飞王伟吴仕梁张凤鸣
Owner 南京日托光伏新能源有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More