Metal phthalocyanine nanowire array and preparation method and application thereof
A technology of nanowire array and metal phthalocyanine, which is applied in the direction of nanotechnology, nanotechnology, metal material coating technology, etc., can solve the problems of many surface defects of nanowires and high degree of disorder of nanowire arrays, so as to improve the quality of crystallization and promote Effect of nanowire extension and cost reduction
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Embodiment 1
[0131] A method for preparing a metal phthalocyanine nanowire array, comprising the steps of:
[0132] (I) Using the M-face sapphire single crystal wafer as the raw material, put it into acetone and wash it with an ultrasonic cleaner for 10 minutes to remove surface oil. The cleaned sapphire wafer was taken out from the acetone, and the surface was blown dry with dry nitrogen to remove residual organic solvent. Then put it into a high-temperature box-type furnace, raise it to 1600°C at a rate of 10°C / min, keep the temperature constant for 10 hours, and finally cool it down to about 25°C with the furnace, then take it out for use. The surface of the treated wafer has a horizontal groove along the direction. Cut the wafer into a size of 1cm×1cm with a diamond pen, and then use ethanol, acetone, ethanol, distilled water, and ethanol to clean it ultrasonically for 10 minutes, and dry it with a nitrogen gun for later use. Sapphire substrate (I).
[0133] (II) Use a pipette to mea...
Embodiment 2
[0137] A method for preparing a metal phthalocyanine nanowire array, comprising the steps of:
[0138](I) Using the M-face sapphire single crystal wafer as the raw material, put it into acetone and wash it with an ultrasonic cleaner for 10 minutes to remove surface oil. The cleaned sapphire wafer was taken out from the acetone, and the surface was blown dry with dry nitrogen to remove residual organic solvent. Then put it into a high-temperature box-type furnace, raise it to 1600°C at a rate of 10°C / min, keep the temperature constant for 10 hours, and finally cool it down to about 25°C with the furnace, then take it out for use. The surface of the treated wafer has a horizontal groove along the direction. Cut the wafer into a size of 1cm×1cm with a diamond pen, and then use ethanol, acetone, ethanol, distilled water, and ethanol to clean it ultrasonically for 10 minutes, and dry it with a nitrogen gun for later use. Sapphire substrate (I).
[0139] (II) Use a pipette to meas...
Embodiment 3
[0143] A method for preparing a metal phthalocyanine nanowire array, comprising the steps of:
[0144] (I) Using the M-face sapphire single crystal wafer as the raw material, put it into acetone and wash it with an ultrasonic cleaner for 10 minutes to remove surface oil. The cleaned sapphire wafer was taken out from the acetone, and the surface was blown dry with dry nitrogen to remove residual organic solvent. Then put it into a high-temperature box-type furnace, raise it to 1600°C at a rate of 10°C / min, keep the temperature constant for 10 hours, and finally cool it down to about 25°C with the furnace, then take it out for use. The surface of the treated wafer has a horizontal groove along the direction. Cut the wafer into a size of 1cm×1cm with a diamond pen, and then use ethanol, acetone, ethanol, distilled water, and ethanol to clean it ultrasonically for 10 minutes, and dry it with a nitrogen gun for later use. Sapphire substrate (I).
[0145] (II) Use a pipette to mea...
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