Silicon-based tunable filter, laser and optical module
A filter and laser technology, which is applied in the field of optical communication, can solve problems affecting laser adjustment and stability, and achieve low power consumption, convenient adjustment, and good stability
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Embodiment 1
[0072] Such as figure 2As shown, the tunable laser of the present application includes a semiconductor optical amplifier (Semiconductor Optical Amplifer, SOA) 100 and a silicon optical integrated chip 200, where the semiconductor optical amplifier 100 is a reflective semiconductor optical amplifier (Reflective Semiconductor Optical Amplifer, RSOA), Usually, it is a gain chip made of III-V material, and the RSOA achieves high-efficiency coupling with the external cavity provided on the silicon optical integrated chip 200 through a coupler to form an external cavity tunable laser. The above-mentioned silicon photonics integrated chip 200 is provided with a first coupler 10, a phase adjuster 20 and a tunable filter. The semiconductor optical amplifier 100 has opposite first end faces and second end faces. The second end face of the semiconductor optical amplifier 100 passes through the second end face. A coupler 10 is coupled with the silicon photonics integrated chip 200, and t...
Embodiment 2
[0083] Such as Figure 12 As shown, the difference from Embodiment 1 is that in this embodiment a ring mirror 90 is used as the partial reflection end of the laser external cavity, and the 1×2 coupler and the first optical splitter in Embodiment 1 are omitted. Here, the loop mirror 90 includes a 2×2 coupler 91 disposed on the silicon photonics integrated chip 200 and a ring waveguide 92 connecting two ports on one side of the 2×2 coupler 91, and the 2×2 coupler 91 is another The two ports on one side are an input port 911 and an output port 912 respectively, and the output port 912 is used as a laser output port for outputting laser light. That is, one end face of the reflective semiconductor optical amplifier 100 constitutes the reflective end face of the laser resonator, and the ring mirror 90 formed by the 2×2 coupler 91 and the ring waveguide 92 constitutes a part of the reflective end face of the laser resonator. Here, the ring waveguide 92 refers to a waveguide that con...
Embodiment 3
[0089] Such as Figure 14 As shown, the difference from Embodiment 1 or 2 is that in this embodiment, the reflective semiconductor optical amplifier 100 is connected to the first coupler on the silicon optical integrated chip 200 through a photonic wire bonding (Photonic Wire Bonding, PWB) 300 10 optical connections. Such as Figure 15 As shown, during assembly, the semiconductor optical amplifier 100 and the silicon photonics integrated chip 200 are installed on a substrate 400. Due to differences in chip thickness and waveguide positions, it is difficult to align the semiconductor optical amplifier 100 and the silicon photonics integrated chip 200. Bonding 300 for optical connection has relatively low requirements on the assembly position and alignment accuracy of the reflective semiconductor optical amplifier 100 and the silicon optical integrated chip 200, which reduces the difficulty of assembling the reflective semiconductor optical amplifier 100 and the silicon optical...
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