Unlock instant, AI-driven research and patent intelligence for your innovation.

(InxGa1-x)2O3 solar-blind ultraviolet photoelectric detector and preparation method thereof

An electrical detector and ultraviolet light technology, applied in the field of solar-blind ultraviolet detection, can solve problems such as the inability to achieve high sensitivity and high detection rate performance, and achieve the effects of high development and application value, fast response speed, and improved photoelectric performance.

Pending Publication Date: 2022-01-11
XIAMEN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In prior art, Ga 2 o 3 Solar-blind photodetectors are mainly thin-film types and there are many related reports, but most of them are Ga 2 o 3 Solar-blind photodetectors still cannot achieve both high sensitivity and high detectivity (Xie, C.; Lu, X.T.; Ma, M.R.; Tong, X.W.; Zhang, Z.X.; Wang, L.; Wu, C.Y.; Yang, W.H.; Luo, L.B. Catalyst-free vapor-solid deposition growth of β-Ga2O3 nanowires for DUV photodetector and image sensor application. Adv. Opt. Mater. 2019, 7, 1901257., Qin, Y.; Long, S.B.; He, Q.M.; Dong, H.; Jian, G.Z.; Zhang, Y.; Hou, X.H.; Tan, P.J.; Adv.Electron.Mater.2019,5,1900389.), the overall performance still needs to be improved, which limits the realization of many application scenarios

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • (InxGa1-x)2O3 solar-blind ultraviolet photoelectric detector and preparation method thereof
  • (InxGa1-x)2O3 solar-blind ultraviolet photoelectric detector and preparation method thereof
  • (InxGa1-x)2O3 solar-blind ultraviolet photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] This embodiment is used to illustrate the present invention (In x Ga 1-x ) 2 o 3 Fabrication process of solar-blind ultraviolet photodetectors. Such as figure 1 As shown, the detector consists of c-Al from bottom to top 2 o 3 Substrate, (In x Ga 1-x ) 2 o 3 Thin film active layer and Au interdigitated electrodes.

[0048] (In this embodiment x Ga 1-x ) 2 o 3 The specific preparation method of solar-blind ultraviolet photodetector is as follows:

[0049] (1) Target synthesis: 0.027mol of Ga 2 o 3 powder and 0.003mol of In 2 o 3 Put the powder into a mortar and grind it evenly, then pour the evenly mixed powder into a stainless steel grinding tool, press it into a round cake with a diameter of 1 inch with a tablet press, and then put it into a high-temperature muffle furnace with a temperature of 1300 ℃ for 24 hours, the heating rate was 5°C / min, and the cooling rate was 10°C / min.

[0050] (2) A piece of 5×5mm single-sided polished c-Al 2 o 3 The sub...

Embodiment 2

[0056] Prepare the MSM sun-blind ultraviolet photodetector for comparison according to the same method as in Example 1, the difference is that 0.0264mol of Ga was weighed in step (1) target synthesis 2 o 3 powder and 0.0066mol of In 2 O, that is, the In content is 20%, and the thickness is 160nm (In 0.2 Ga 0.8 ) 2 o 3film.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an (InxGa1-x)2O3 solar-blind ultraviolet photoelectric detector and a preparation method thereof, the light sensitivity of the (InxGa1-x)2O3 solar-blind ultraviolet photoelectric detector reaches 108, the detection rate reaches 2*10<16>-5*10<16> Jones, the (InxGa1-x)2O3 solar-blind ultraviolet photoelectric detector comprises a c-Al2O3 substrate, an (InxGa1-x)2O3 film with the thickness of 0.1-0.5microm is formed on the c-Al2O3 substrate through PLD growth, and an interdigital electrode is arranged on the (InxGa1-x)2O3 film, wherein x is greater than or equal to 0.05 and less than or equal to 0.1. Ga2O3 and In2O3 are alloyed, the introduction of In effectively reduces the dark current of the device, improves the photoresponse of the device, greatly improves the photoelectric properties of the device, and realizes ultrahigh sensitivity and ultrahigh detection rate, so that the device prepared by the invention has extremely high sensitivity to solar-blind light, can identify extremely weak solar-blind ultraviolet signals, the detector is not influenced by visible light, and has all-weather solar-blind ultraviolet light detection capability.

Description

technical field [0001] The invention belongs to the technical field of solar-blind ultraviolet detection, and specifically relates to a (In x Ga 1-x ) 2 o 3 Solar-blind ultraviolet photodetector and its preparation method. Background technique [0002] The ozone layer in the atmosphere has a strong absorption of ultraviolet light with a wavelength of 200-280nm, and the ultraviolet light in this band is almost attenuated to zero near the surface, so this band is called the solar blind zone. This provides a good signal background for the solar-blind ultraviolet detection technology, which has the advantages of low background noise and high sensitivity. [0003] The application requirements of solar-blind ultraviolet detection technology at the national and market levels are of strategic significance. devices play an irreplaceable role. The application scenarios of solar-blind ultraviolet photodetectors also include flame detection, space communication, secure communicati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/032H01L31/0392H01L31/09H01L31/18C23C14/34
CPCH01L31/09H01L31/18H01L31/032H01L31/1864H01L31/0392C23C14/3407C23C14/3485Y02E10/50Y02P70/50
Inventor 张洪良陈文山徐翔宇况思良张佳业
Owner XIAMEN UNIV