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Different-band pumping 1550nm photon cascade VCSEL (vertical cavity surface emitting laser) and preparation method thereof

A technology of lasers and photons, which is applied in the direction of lasers, phonon exciters, laser components, etc., can solve the problems of low luminous intensity and luminous efficiency, achieve low luminous intensity and luminous efficiency, efficient use, and improve luminous efficiency Effect

Pending Publication Date: 2022-01-14
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem of low luminous intensity and luminous efficiency of existing VCSEL lasers, the present invention provides a photon cascaded VCSEL laser with out-of-band pumping of 1550 nm and a preparation method, which can realize efficient utilization of energy in the process of energy level transition and improve luminescence efficiency, and achieve 1550nm wavelength laser output

Method used

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  • Different-band pumping 1550nm photon cascade VCSEL (vertical cavity surface emitting laser) and preparation method thereof
  • Different-band pumping 1550nm photon cascade VCSEL (vertical cavity surface emitting laser) and preparation method thereof
  • Different-band pumping 1550nm photon cascade VCSEL (vertical cavity surface emitting laser) and preparation method thereof

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preparation example Construction

[0032] The invention provides a 1550nm out-of-band pumped photon cascaded VCSEL laser and its preparation method, which can realize efficient utilization of energy in the process of energy level transition, improve luminous efficiency, and realize laser output with a wavelength of 1550nm. The design basis is as follows:

[0033] Rare earth ions have the advantages of stable luminescence properties, long fluorescence lifetime, large anti-Stokes shift and sharp luminescence peaks, and are used in many laser materials, rare magnetic semiconductor materials, nonlinear optical materials and nano-luminescent materials. The active ions of the active ions, which are doped into the material as impurities, have an extremely important impact on the microstructure, electrical properties, and optical magnetic properties of the material; the rare earth element-doped working substance has the characteristics of high doping concentration and high quantum conversion efficiency. It can greatly r...

specific Embodiment 1

[0047] Such as figure 2 As shown, the present invention provides a method for preparing a bottom emission out-of-band pumped 1550nm photon cascade VCSEL laser, comprising:

[0048] Step 1. Growth of epitaxial structure

[0049] N-type semi-reflective DBR layer, N-type total reflection DBR layer, N-type waveguide layer, semiconductor quantum well layer, P-type waveguide layer, oxide layer, P-type total reflection DBR layer, P-type fully reflection DBR layer;

[0050] Step 2. Rare earth doping

[0051] After the epitaxial wafer is cleaned, it is blown dry with high-purity nitrogen protection, heated and dried, and 500nm SiO is deposited by PECVD technology. 2 As an implantation mask, spin-coat thick glue in the non-implantation area, then put the epitaxial wafer into the ion implanter for implantation, and implant multi-layers of erbium, erbium ytterbium, erbium ytterbium scandium, and Other lanthanide metal ions, forming GaAs, ErxAsz, YbyAsz (wherein x+y+z=1) or XyAsz (X i...

specific Embodiment 2

[0068] Such as image 3 Shown, the present invention provides a kind of preparation method of the photon cascade VCSEL laser of bottom emission 1550nm, comprising:

[0069] Step 1. Growth of epitaxial structure

[0070] Epitaxial growth of N-type semi-reflective DBR layer and N-type total reflection DBR layer on the surface of GaAs substrate in sequence;

[0071] Step 2. Epitaxial growth of rare earth ion doped layer

[0072] Using MBE technology to continue to grow multi-layer erbium, erbium ytterbium, erbium ytterbium scandium, and other lanthanide metal ions on the N-type total reflection DBR layer to form GaAs, ErxAsz, YbyAsz (wherein x+y+z=1) or XyAsz ( X is a rare earth ion-doped layer of a multilayer structure in which layers of lanthanide elements are alternately grown. Using MBE technology to continue to grow N-type waveguide layer, semiconductor quantum well layer, P-type waveguide layer, oxide layer, P-type total reflection DBR layer, P-type total reflection DBR ...

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Abstract

The invention discloses a different-band pumping 1550nm photon cascade VCSEL (vertical cavity surface emitting laser) and a preparation method. A VCSEL chip epitaxial structure on a substrate sequentially comprises an N-type DBR layer, an N-type total reflection DBR layer, a rare earth element doping layer, an N-type waveguide layer, a semiconductor quantum well layer, a P-type waveguide layer, an oxide layer, a P-type total reflection DBR layer and a P-type DBR layer from the substrate side to the top, wherein the N-type total reflection DBR layer, the N-type waveguide layer, the semiconductor quantum well layer, the P-type waveguide layer and the P-type total reflection DBR layer form a first laser resonant cavity, the N-type DBR layer, the rare earth element doping layer, the oxide layer and the P-type DBR layer form a second laser resonant cavity, and the first laser resonant cavity and the second laser resonant cavity form a photon cascade composite cavity. Efficient utilization of energy in the energy level transition process is achieved through the rare earth element doping layer, the light emitting efficiency is improved, and laser output with the wavelength of 1550 nm is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to an out-of-band pumped 1550nm photon cascaded VCSEL laser and a preparation method. Background technique [0002] Compared with edge-emitting semiconductor lasers, vertical cavity surface-emitting semiconductor lasers (VCSEL) have the advantages of small size, high coupling efficiency, low threshold current, high modulation rate, easy two-dimensional integration, single longitudinal mode operation, on-chip testing and manufacturing costs Low-level advantages, has become one of the most important semiconductor optoelectronic devices, widely used in many fields such as optical interconnection, optical storage, optical communication, laser printing, laser medical treatment, laser drilling, etc., in consumer electronics, 5G communication, wireless Human-machine and Internet of Things intelligent service systems also play an important role, becoming the basis of various se...

Claims

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Application Information

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IPC IPC(8): H01S5/183
CPCH01S5/183H01S5/18361
Inventor 王智勇代京京兰天李胜南
Owner BEIJING UNIV OF TECH