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Preparation method of PbSe thin film intermediate infrared detector based on interdigital electrode

A technology of infrared detectors and interdigitated electrodes, applied in the direction of electric radiation detectors, ion implantation plating, coatings, etc., can solve the problems of performance attenuation, expensive equipment, complexity, etc., achieve good performance, reduce preparation costs, and operate simple effect

Inactive Publication Date: 2022-01-18
ZHEJIANG UNIV CITY COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, mid-infrared detectors are mainly made of mercury cadmium telluride, indium antimonide and other materials; mid-infrared detectors often need to be equipped with a cooling system to work normally, and the equipment required for preparation is expensive and complicated, and the performance attenuation is serious at room temperature

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  • Preparation method of PbSe thin film intermediate infrared detector based on interdigital electrode
  • Preparation method of PbSe thin film intermediate infrared detector based on interdigital electrode

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1 of the present application provides a method for preparing a PbSe thin film mid-infrared detector based on interdigitated electrodes:

[0031] Step 1. Select a clean quartz sheet, wash the substrate of the quartz sheet with lotion, and dry the quartz sheet;

[0032] Step 2, preparing a PbSe thin film with a tube furnace;

[0033] Step 2.1, put PbSe powder in the test tube, connect several clean quartz sheets after step 1 end to end, and lay them in the test tube near the mouth of the tube; place the test tube flat on the tube furnace In the quartz tube, the PbSe powder is located at the heating center of the tube furnace; the tube furnace is closed, and the sealed quartz tube on the high-temperature tube furnace is evacuated to a vacuum by an air pump;

[0034] Step 2.2. Slowly heat the quartz tube with a tube furnace, and feed pure nitrogen into the quartz tube as a protective gas; control the air pressure in the quartz tube within the set range; slowly i...

Embodiment 2

[0042] On the basis of Embodiment 1, Embodiment 2 of the present application provides a method for preparing a PbSe thin film using CVD technology (chemical vapor deposition) and preparing an interdigitated electrode detector:

[0043] Step 1, preparing a PbSe thin film on the surface of the substrate.

[0044] Step 2. Place the substrate with the PbSe thin film obtained in step 1 in a vacuum coating machine to prepare an interdigitated electrode structure

[0045] Step 3. Package the sample with PCB.

[0046] (1) Preparation of PbSe thin film:

[0047] Clean the silicon wafer in an ultrasonic instrument for 5 minutes, then take it out and dry it for 120 minutes.

[0048] Add 0.9g of PbSe powder at the bottom of the test tube, and place the quartz plates end to end near the mouth of the test tube.

[0049] Put the quartz test tube into the quartz tube of the tube furnace, so that the PbSe powder is located in the heating center of the tube furnace, so as to control the heatin...

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Abstract

The invention relates to a preparation method of a PbSe thin film intermediate infrared detector based on an interdigital electrode. The method comprises the steps of selecting a clean quartz chip, cleaning a substrate of the quartz chip with a cleaning agent, and drying the quartz chip; preparing a PbSe film by using a tubular furnace; preparing an interdigital electrode structure by using a vacuum coating machine; and attaching a PbSe thin film quartz chip with the surface plated with a silver interdigital electrode structure to a PCB, using an enameled wire for communicating an electrode with a pin on the surface of the PCB, and manufacturing the interdigital electrode intermediate infrared detector with the PbSe thin film. The method has the beneficial effects that the PbSe material thin film is grown by adopting a chemical vapor deposition method, and the interdigital electrode is prepared to realize the high-performance intermediate infrared detector; and the adopted equipment is a vacuum coating machine and a tubular furnace, the used raw materials are PbSe and silver particles, the price is low, the operation is simple, the finished product can work at normal temperature and has better performance, and the preparation cost of the PbSe film intermediate infrared detector can be effectively reduced.

Description

technical field [0001] The invention belongs to the field of infrared detector preparation, in particular to a preparation method of a PbSe thin film mid-infrared detector based on an interdigitated electrode structure. Background technique [0002] PbSe is an ideal material for mid-infrared detectors. PbSe belongs to group IV-VI semiconductor materials. The preparation and growth technology of PbSe has a very important impact on mid-infrared detectors. [0003] At present, mid-infrared detectors are mainly made of mercury cadmium telluride, indium antimonide and other materials; mid-infrared detectors often need to be equipped with a cooling system to work normally, and the equipment required for preparation is expensive and complicated, and the performance attenuation is serious at room temperature . Contents of the invention [0004] The purpose of the present invention is to overcome the deficiencies in the prior art and provide a method for preparing a PbSe thin film...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/18C23C14/24G01J5/20
CPCC23C14/18C23C14/24G01J5/20
Inventor 毕岗张伯轩蔡春锋
Owner ZHEJIANG UNIV CITY COLLEGE