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Preparation method and application of nickel oxide-gold-zinc oxide coaxial nano array

A technology of zinc oxide nanowires and nanowire arrays, applied in nanotechnology, nanotechnology, nanotechnology for sensing, etc., can solve problems such as poor process stability, difficult large-area growth, and complex solution preparation environment, and achieve Excellent photoelectric performance, beneficial to light absorption, and the effect of promoting transport

Pending Publication Date: 2022-02-08
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For nickel oxide-gold-zinc oxide composite materials, the solution method is generally used to achieve a uniform and dense wrapping effect for the shell material, but the solution preparation environment is complex and the process stability is poor, it is difficult to grow in a large area, and the oxidation The zinc substrate is soaked in aqueous solution for many times or for a long time, this process will change the surface defect state of zinc oxide

Method used

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  • Preparation method and application of nickel oxide-gold-zinc oxide coaxial nano array
  • Preparation method and application of nickel oxide-gold-zinc oxide coaxial nano array
  • Preparation method and application of nickel oxide-gold-zinc oxide coaxial nano array

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preparation example Construction

[0029] like Image 6 The, according to the present invention, nickel oxide - gold - Preparation ZnO nanowire arrays coaxially; specific preparation steps are as follows:

[0030] (1), the conductive substrate pretreated into a magnetron sputtering device, evacuated by a mechanical pump and the degree of vacuum molecular pump chamber ≤7.0 × 10 -4 PA, then adjust RF system starter zinc oxide target, the first period of time that the pre-sputter clean the target surface, while allowing the system to stabilize and then into high purity oxygen and high purity argon gas, thereby obtaining an oxide sputtering zinc seed layer substrate;

[0031] (2), an equimolar preparation of zinc acetate [Zn (CH 3 COO) 2 · 2H 2 O] and hexamethylenetetramine [(CH 2 ) 6 N 4 ] Aqueous solution in step (1) in the resulting substrate, zinc acetate and hexamethylenetetramine aqueous solution was added to a hydrothermal reaction vessel, and then placed in an oven at 90-120 deg.] C the reaction 4-10h, with ultr...

Embodiment 1

[0047] (1), the FTO conductive glass was cut into 0.5 × 1.0cm 2 Pieces, which in turn is in ultra pure water, each ultrasonic acetone, ethanol, ultrapure water 10min, then washed with ultrapure water, dried soaked in absolute ethanol for standby;

[0048] (2), the first clean FTO conductive glass with a high temperature adhesive tape 0.5 × 0.5cm 2 Electrode area, placed in a magnetron chamber was then evacuated by a mechanical pump and molecular pump chamber reaches a vacuum degree 5.0 × 10 -4 PA, then adjust RF system starter zinc oxide target, the first period of time that the pre-sputter clean the target surface, while allowing the system to stabilize; when the chamber temperature is stabilized, while bubbling high purity oxygen and 50sccm high purity 5sccm argon, when the operating pressure is of 2 Pa, RF power of 50W, the sputtering time was 40min, to obtain a sputtering zinc oxide seed layer of a thickness of 12nm;

[0049] (3), and 0.219g of zinc acetate dissolved in 100mL ...

Embodiment 2

[0053] (1), the FTO conductive glass was cut into 0.5 × 1.0cm 2 Pieces, which in turn is in ultra pure water, each ultrasonic acetone, ethanol, ultrapure water 10min, then washed with ultrapure water, dried soaked in absolute ethanol for standby;

[0054] (2), the first clean FTO conductive glass with a high temperature adhesive tape 0.5 × 0.5cm 2 Electrode area, placed in a magnetron chamber was then evacuated by a mechanical pump and molecular pump chamber reaches a vacuum degree 6.0 × 10 -4 PA, RF system reconditioning zinc oxide target ignition, the first period of time that the pre-sputter clean the target surface, while allowing the system to stabilize; when the chamber temperature is stabilized, while 10sccm into high purity oxygen and high purity 100sccm argon pressure of 3Pa work, 200W of RF power, sputtering time was 40min, a thickness of the sputtering zinc oxide seed layer of 36nm;

[0055] (3), and 2.190g of zinc acetate dissolved in 100mL ultrapure water with a magne...

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Abstract

The invention discloses a preparation method and application of a nickel oxide-gold-zinc oxide coaxial nano array. The method belongs to the field of nano photoelectric functional materials, and comprises the following specific steps: 1, placing a pretreated conductive substrate in a magnetron sputtering instrument, and sputtering a zinc oxide target material in mixed gas of high-purity oxygen and high-purity argon to obtain a zinc oxide seed layer; 2, adding the zinc oxide nanowire array into an aqueous solution of zinc acetate and hexamethylenetetramine, and performing hydrothermal synthesis to obtain a zinc oxide nanowire array; 3, washing and drying the obtained product, and then carrying out plasma nanogold sputtering to obtain gold-zinc oxide nanowire array; and 4, finally, putting the gold-coated zinc oxide nanowire array (gold-zinc oxide nanowire array) into a magnetron sputtering instrument, and carrying out re-modification on nickel oxide to finally obtain the nickel oxide-gold-zinc oxide coaxial nanowire array. The nickel oxide-gold-zinc oxide coaxial nanowire array disclosed by the invention has the characteristics of controllable morphology, photoelectric synergy, good repeatability and the like.

Description

Technical field [0001] The present invention belongs to the field of nano photoelectric functional material, to a nickel oxide which can be used in photosensor - gold - Preparation ZnO nanowire arrays coaxially, the application of the photoelectric sensor. Background technique [0002] Nano optoelectronic material, in particular a semiconductor material, having a wide application prospect in the photodetection light emitting device, degradation of catalytic gas sensing and other fields. Nano optoelectronic material composition, morphology and size affect the performance of the application. So get a different composition, morphology and size of the nano-heterojunction attracting people's interest in research. As the transition metal oxide, zinc oxide and nickel oxide in the photodetection light emitting device, and degradation of the catalytic gas sensing fields have demonstrated superior performance. Compared with single component, zinc oxide, nickel oxide compounded with p-n het...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/02C23C14/18C23C14/58G01N27/26G01N27/30B82Y15/00B82Y30/00B82Y40/00
CPCC23C14/3457C23C14/35C23C14/086C23C14/022C23C14/58C23C14/185B82Y15/00B82Y30/00B82Y40/00G01N27/305G01N27/26
Inventor 徐春祥董秀秀王茹石增良
Owner SOUTHEAST UNIV
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