Formula of efficient silicon-boron system impregnant as well as preparation and application processes of efficient silicon-boron system impregnant
A technology of impregnating agent and silicon boron, which is applied in the field of impregnating agent for electrolytic aluminum anode carbon block, high-efficiency silicon boron system impregnating agent formula and its preparation and application process, which can solve the problem of unsatisfactory product purity, insufficient impregnation depth and long impregnation time to avoid inconsistent reaction rates, high dispersion stability, and easy access to raw materials
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Example Embodiment
[0029] Example 1
[0030] In this embodiment, a high-efficiency silicon boron system impregnation is a solution made of boron sand, sodium silicate and water. According to the mass fraction, the boron content is 2% in the solution, and the silicon content is 2%, the remaining amount is water.
[0031] The impregnating agent in this example is prepared and used when the electrolytic aluminum anode is replaced, and the specific preparation and application methods include the following steps:
[0032] A. As a proportion of boron sand and sodium silicate according to the proportion of the impregnant assembly, the first two are placed in the stirring vessel, dissolved in water, and mix well with 80 rpm agitation;
[0033] B. Record the impregnation of the previous step to the reserve;
[0034] C, placing the pre-baked anode carbon block in the impregnation tank and taking the vacuum treatment, so that the vacuum in the can is 300 Pa;
[0035] D. Implact the prepared impregnation liquid...
Example Embodiment
[0039] Example 2
[0040] The present embodiment differs from the first embodiment in that the high-efficiency silicon boron system impregnation in the present embodiment, the boron content is 2%, the silicon content is 4%, the remaining amount is water. The steps of specific preparation and application methods are the same as those of the examples.
[0041] The anode was carried out in the anode after the E steps of the E step in this example, and the residual rate was 97.6%, the dust content was 0.8%, and the loss rate was 1.6%.
Example Embodiment
[0042] Example 3
[0043] The present embodiment differs from the first embodiment in that the high-efficiency silicon boron system impregnation in the present embodiment, the boron content is 2%, the silicon content is 4%, the remaining amount is water. The steps of specific preparation and application methods are the same as those of the examples.
[0044] The anode was carried out in the anode after the E step of the E step in this example, and the residual rate was 98.5%, the dust content was 0.4%, and the loss rate was 1.1%.
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