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High-resistance GaN-based HEMT device and preparation method thereof

A high-resistance, device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems that affect the leakage characteristics and withstand voltage of GaN-based HEMT devices, and increase the dislocation density of GaN-based epitaxial structures, etc. , to achieve the effect of simple and controllable process plan, improving crystal quality and optimizing process

Active Publication Date: 2022-02-08
JIHUA LAB
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of this application is to provide a high-resistance GaN-based HEMT device and its preparation method, aiming at solving the problem of increasing the dislocation density of the GaN-based epitaxial structure by MOCVD epitaxy in the prior art, Issues Affecting Leakage Characteristics and Withstand Voltage Capability of GaN-based HEMT Devices

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  • High-resistance GaN-based HEMT device and preparation method thereof
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  • High-resistance GaN-based HEMT device and preparation method thereof

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preparation example Construction

[0061] Specifically, the preparation method of the high-resistance GaN-based HEMT device of the present application includes the following steps:

[0062] (1) Substrate no-cleaning and high-temperature impurity removal.

[0063] In this application, a silicon substrate is selected as the substrate for GaN epitaxial structure growth.

[0064] In this application, the substrate does not need to be cleaned before use. Because the HF (Hydrofluoric Acid, hydrofluoric acid) solution or other acid-base solutions used for cleaning will have inconsistent corrosion rates at different positions on the surface of the silicon substrate and the process is uncontrollable. In addition, the impurities contained in the cleaning solution and human factors are very easy to introduce pollution sources, resulting in secondary pollution of the silicon substrate, which will have a negative impact on the subsequent controllable growth of high-quality AlN templates. Therefore, the traditional method o...

Embodiment 1

[0131] (1) Substrate no-cleaning and high-temperature impurity removal: At 1065°C, the pressure in the reaction chamber was maintained at 70torr, and the silicon substrate was treated at high temperature for about 2 minutes in a hydrogen atmosphere.

[0132] (2) Substrate nitriding treatment: at 1065°C, the pressure in the reaction chamber was maintained at 70torr, and NH 3 The flow rate is 0.4slm, and the processing time is 30S.

[0133] (3) Pre-coating Al: at 1075°C, the pressure of the reaction chamber was maintained at 70torr, and TMAl with a flow rate of 50sccm was introduced in a hydrogen atmosphere, and a layer of Al was deposited on the nitrided Si substrate, and the deposition time was 80s.

[0134] (4) Growth of AlN buffer layer:

[0135]At 1075°C, the pressure in the reaction chamber was maintained at 70torr, and the flow rate of 3slm NH 3 1. A first AlN buffer layer with a thickness of about 20 nm is grown by TMAl with a flow rate of 140 sccm to form three-dimens...

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Abstract

The invention relates to the field of semiconductor devices, and discloses a high-resistance GaN-based HEMT device and a preparation method thereof. The preparation method comprises the following steps of: carrying out nitriding treatment; pre-paving Al; growing AlN buffer layers: sequentially growing a first AlN buffer layer, a second AlN buffer layer and a third AlN buffer layer; growing AlGaN buffer layers: sequentially growing a first AlyGa<1-y>N buffer layer and a second AlyGa<1-y>N buffer layer; growing a self-doped carbon high-resistance GaN epitaxial layer; growing a GaN channel layer; growing an Al<y>Ga<1-y>N barrier layer; and growing a GaN cap layer. By optimizing the process, the dislocation density of the AlN buffer layers and the self-doped carbon high-resistance GaN epitaxial layer can be greatly reduced, and the crystal quality is improved.

Description

technical field [0001] The present application relates to the field of semiconductor devices, and mainly relates to a high-resistance GaN-based HEMT device and a preparation method thereof. Background technique [0002] With the increasing market demand for high-voltage conversion devices, silicon devices can no longer meet the requirements due to their own material limitations. GaN (Gallium Nitride, Gallium Nitride) based HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) devices have high electron saturation speed and breakdown voltage, which can meet the needs of radio frequency power devices for speed and high withstand voltage. It has received great attention from many international semiconductor device manufacturers and has become a new research hotspot. [0003] In the preparation process of GaN-based HEMT devices, one of the key core technologies is the growth of high-quality, high-resistance GaN-based epitaxial structures. Among the many s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/335H01L29/06H01L29/778
CPCH01L29/66462H01L29/7787H01L29/0684
Inventor 郭嘉杰吴帆王慧勇张南刘自然孔倩茵
Owner JIHUA LAB