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Substrate for silicon-based MOSFET device and production method thereof

A substrate and device technology, which is applied in the substrate of silicon-based MOSFET devices and its preparation, can solve the problems of low withstand voltage of MOSFET devices, improve performance and stability, and solve the effects of low withstand voltage

Active Publication Date: 2022-02-18
JIHUA LAB
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the purpose of this application is to provide a substrate for silicon-based MOSFET devices and its preparation method, aiming to solve the problem of low withstand voltage of MOSFET devices made of existing Si substrates. question

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  • Substrate for silicon-based MOSFET device and production method thereof

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preparation example Construction

[0039] Specifically, the preparation method for the substrate of the silicon-based MOSFET device in the present application includes the following steps:

[0040] (1) Clean and dry the Si substrate.

[0041] In this step, the Si substrate may be cleaned and dried using an RCA standard cleaning process. The RCA standard cleaning process is a prior art and will not be repeated here. After cleaning and drying, put the Si substrate into chemical vapor deposition equipment.

[0042] (2) Etching the Si substrate.

[0043] In this step, the Si substrate is first etched, and the surface of the RCA-cleaned Si substrate will have an extremely thin layer of silicon oxide. Etching can remove the silicon oxide layer on the surface, which is beneficial to the subsequent film growth.

[0044] Specifically, step (2) includes the following steps:

[0045] Heat the Si substrate to 1000-1200°C, and pass in a flow rate of 3-5 slm of hydrogen (H 2 ) and hydrogen chloride (HCl) with a flow rate...

Embodiment 1

[0072] (1) RCA standard cleaning process is used to clean and dry the Si substrate with a thickness of 300 μm, and put the Si substrate into a high-temperature epitaxy furnace.

[0073] (2) Heating the Si substrate to 1200°C, passing H at a flow rate of 4 slm 2 and the mixed gas of HCl with a flow rate of 0.2 slm to etch the Si substrate for 10 min, and then turn off the gas source.

[0074] (3) Lower the temperature of the Si substrate to room temperature, and pass H at a flow rate of 4 slm 2 and C with a flow rate of 0.04slm 2 h 4 The mixed gas, the temperature of the Si substrate was raised to 1300°C within 1min, and kept for 1min, and a polycrystalline 3C-SiC buffer layer with a thickness of 15nm was grown on the surface of the Si substrate, and then the gas source was turned off.

[0075] (4) Raise the temperature of the Si substrate to 1350°C, and feed H at a flow rate of 4 slm 2 , SiH at a flow rate of 0.08 slm 4 and C with a flow rate of 0.04slm 2 h 4 A mixed ga...

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Abstract

The invention relates to the field of semiconductor devices, and discloses a substrate for a silicon-based MOSFET device and a production method thereof. The production method comprises the following steps: etching a Si substrate; growing a polycrystalline 3C-SiC buffer layer; growing a single crystal 3C-SiC epitaxial layer; growing a SiNx insulating layer, and wherein x is larger than 1; and carrying out annealing treatment on the Si substrate. By optimizing the process and combining the epitaxial layers, the problem of a low withstand voltage of the Si / SiO2 substrate is solved, and the performance and the stability of the Si-based MOSFET device are improved.

Description

technical field [0001] The present application relates to the field of semiconductor devices, and mainly relates to a substrate for a silicon-based MOSFET device and a preparation method thereof. Background technique [0002] Traditional silicon (Si)-based MOSFET devices generally use Si / SiO 2 Substrate, Si / SiO 2 The substrate is silicon dioxide (SiO2) formed on the Si surface through a thermal oxidation process on the Si substrate 2 )Insulation. However, using this type of SiO 2 The withstand voltage capability of the metal oxide semiconductor field effect transistor (MOSFET) device made of the Si substrate of the insulating layer is not high. [0003] Therefore, the prior art still needs to be improved and developed. Contents of the invention [0004] In view of the above-mentioned deficiencies in the prior art, the purpose of this application is to provide a substrate for silicon-based MOSFET devices and its preparation method, aiming to solve the problem of low wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L29/165
CPCH01L21/02381H01L21/02447H01L21/02513H01L21/02529H01L21/02598H01L29/165
Inventor 黄吉裕毛朝斌戴科峰仇礼钦高桑田罗骞
Owner JIHUA LAB
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