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Additive and photoresist composition containing same

A composition and photoresist technology, applied in the field of photoresist, can solve problems such as affecting resolution, and achieve the effects of inhibiting corrosion, stabilizing performance and improving corrosion resistance

Pending Publication Date: 2022-03-01
陕西彩虹新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] With the continuous development of semiconductor and liquid crystal panel technology, in order to achieve high-precision transfer of graphics, higher requirements are put forward for the photoresist used, which is mainly reflected in the resolution of the photoresist, and high resolution is still the research area. The key direction: the higher the uniformity of the graphic edge, the higher the resolution, and the corrosion resistance of the photoresist plays a decisive role in the uniformity of the line edge. In order to obtain better lines, it is necessary to further improve the photoresist. Corrosion resistance, the existing photoresist has a certain side erosion phenomenon, the actual width of the metal line is often smaller than the width of the photoresist, when the side erosion phenomenon is serious, it will affect the resolution, so how to improve the corrosion resistance of the photoresist Sex becomes the key to R&D

Method used

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  • Additive and photoresist composition containing same
  • Additive and photoresist composition containing same
  • Additive and photoresist composition containing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The structure of compound 1 (5-hydroxyl-2-pyrazoline) is:

[0040]

[0041] 12% novolac resin (molecular weight 4500), 2% photosensitizer (trihydroxybenzophenone-diazonaphthoquinone sulfonate), 85% propylene glycol methyl ether acetate, 0.45% 1,1 , 1-tri-p-hydroxyphenylethane, 0.15% of polyether siloxane copolymer and 0.14% of compound 1 were mixed at room temperature to obtain a photoresist composition whose top etch (T) and bottom etch ( B) the ratio, as shown in Table 1.

Embodiment 2

[0045] The structure of compound 2 (3-propyl-5-hydroxyl-2-pyrazoline) is:

[0046]

[0047] 11.5% novolak resin (molecular weight 6700), 2.3% photosensitizer (trihydroxybenzophenone-diazonaphthoquinone sulfonate), 85% propylene glycol methyl ether acetate, 0.45% 1,1 , 1-tri-p-hydroxyphenylethane, 0.18% polyether siloxane copolymer and 0.10% compound 2 were mixed at room temperature to obtain a photoresist composition, the T / B ratio of which is shown in Table 1.

Embodiment 3

[0051] The structure of compound 3 (1-phenyl-5-hydroxy-2-pyrazoline) is:

[0052]

[0053] 13.8% novolac resin (molecular weight is 6700), 2.6% photosensitizer (tetrahydroxybenzophenone-diazonaphthoquinone sulfonate), 79% propylene glycol methyl ether acetate, 3.7% benzyl alcohol, 0.49% of 1,1,1-tri-p-hydroxyphenylethane, 0.18% of polyether siloxane copolymer and 0.23% of compound 3 were mixed at room temperature to obtain a photoresist composition whose T / B Such as shown in Table 1.

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PUM

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Abstract

The invention discloses an additive and a photoresist composition containing the additive, the additive is a pyrazoline compound and a five-membered heterocyclic compound composed of two connected nitrogen atoms and three carbon atoms, the additive has a double bond, the structure contains lone pair electrons, the lone pair electrons and metal atoms can form covalent bonds, and the metal atoms can form metal atoms. The pyrazoline compound is a very important organic heterocyclic compound; the photoresist composition disclosed by the invention comprises the linear phenolic resin, the photosensitizer, the solvent, the sensitizer, the flatting agent and the additive, and the additive can be adsorbed on the surface of metal to form a compact protective film, so that the corrosion of the metal is inhibited, the occurrence of side surface corrosion in the developing process is reduced, and the corrosion resistance of the photoresist is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of photoresist, in particular to an additive and a photoresist composition containing the additive. Background technique [0002] Photoresist is mainly used in the micro-processing of integrated circuits and semiconductor discrete devices in the electronics industry. It uses photochemical reactions to transfer the required micro-patterns from the mask to the substrate to be processed after exposure and development. Perform etching, diffusion, ion implantation, metallization and other processes. [0003] With the continuous development of semiconductor and liquid crystal panel technology, in order to achieve high-precision transfer of graphics, higher requirements are put forward for the photoresist used, which is mainly reflected in the resolution of the photoresist, and high resolution is still the research area. The key direction: the higher the uniformity of the graphic edge, the higher the resolution, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004
CPCG03F7/004
Inventor 杨欣崔淑杰李永强吕明高峰高昂冀涛李春
Owner 陕西彩虹新材料有限公司
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