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Target material for semiconductor industry and preparation method thereof

An industrial and semiconductor technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as poor strength performance and poor target density.

Pending Publication Date: 2022-03-08
广州市尤特新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The raw materials used in the existing targets are relatively simple, and the prepared targets have poor density and poor strength properties, and further improvement is needed.

Method used

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  • Target material for semiconductor industry and preparation method thereof
  • Target material for semiconductor industry and preparation method thereof

Examples

Experimental program
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Effect test

preparation example Construction

[0043] The preparation method of described modified bentonite dispersant is:

[0044] S1: Put the bentonite into the hydrochloric acid solution with a mass fraction of 10-20% for stirring and dispersing treatment, the stirring speed is 100-500r / min, the stirring time is 10-20min, after the stirring is completed, wash with water, dry and set aside;

[0045] S2: Put the bentonite in S1 into a calcination furnace for calcination, the calcination temperature is 400-600°C, the calcination time is 10-20min, and then the calcination temperature is reduced to 200°C at a rate of 1-3°C / min, and continue Keep warm for 20-30min, and finally cool down to room temperature naturally;

[0046]S3: send the bentonite of S2 into a grinder for grinding, the grinding speed is 1000-1500r / min, the grinding time is 10-20min, and the grinding is completed to obtain the bentonite dispersant;

[0047] S4: Send the bentonite dispersant into the refiner for stirring treatment, the treatment speed is 500-...

Embodiment 1

[0072] A kind of target material for semiconductor industry in this embodiment includes the following raw materials in parts by weight:

[0073] 10 parts of germanium, 5 parts of tellurium, 4 parts of selenium, 1 part of modified bentonite dispersant, 1 part of modifier, 1 part of rare earth agent modified graphite powder, 30 parts of silicon powder;

[0074] The preparation method of described modified bentonite dispersant is:

[0075] S1: Put the bentonite into the hydrochloric acid solution with a mass fraction of 10% for stirring and dispersing treatment, the stirring speed is 100r / min, the stirring time is 10min, after the stirring is completed, wash with water, dry, and set aside;

[0076] S2: Put the bentonite in S1 into a calcination furnace for calcination. The calcination temperature is 400°C, and the calcination time is 10 minutes. Then, the calcination temperature is reduced to 200°C at a rate of 1°C / min, and the heat preservation is continued for 20 minutes, and f...

Embodiment 2

[0100] A kind of target material for semiconductor industry in this embodiment includes the following raw materials in parts by weight:

[0101] 20 parts of germanium, 10 parts of tellurium, 10 parts of selenium, 2 parts of modified bentonite dispersant, 6 parts of modifier, 3 parts of rare earth agent modified graphite powder, 40 parts of silicon powder;

[0102] The preparation method of described modified bentonite dispersant is:

[0103] S1: Put the bentonite into the hydrochloric acid solution with a mass fraction of 20% for stirring and dispersing treatment, the stirring speed is 500r / min, the stirring time is 20min, after the stirring is completed, wash with water, dry, and set aside;

[0104] S2: Put the bentonite in S1 into a calcination furnace for calcination, the calcination temperature is 600°C, the calcination time is 20min, then reduce the calcination temperature to 200°C at a rate of 3°C / min, continue to keep warm for 30min, and finally cool naturally to room te...

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Abstract

The invention discloses a target material for semiconductor industry. The target material comprises the following raw materials in parts by weight: 10-20 parts of germanium, 5-10 parts of tellurium, 4-10 parts of selenium, 1-2 parts of a modified bentonite dispersant, 1-6 parts of a modifier, 1-3 parts of rare earth agent modified graphite powder and 30-40 parts of silicon powder. In the preparation of the target material for the semiconductor industry, the target material is prepared from germanium, tellurium, selenium and other raw materials in proportion, the added modified bentonite dispersing agent and the rare earth agent modified graphite powder are treated by a modifier and then are applied to a product as a pretreatment additive, so that the performance of the product can be remarkably improved, and the density and the shrinkage degree of the raw materials are improved.

Description

technical field [0001] The invention relates to the technical field of target materials for the semiconductor industry, in particular to a target material for the semiconductor industry and a preparation method thereof. Background technique [0002] The coating target is a sputtering source that forms various functional thin films on the substrate by sputtering under appropriate process conditions through magnetron sputtering, multi-arc ion plating or other types of coating systems. To put it simply, the target is the target material bombarded by high-speed energetic particles. It is used in high-energy laser weapons. When lasers with different power densities, different output waveforms, and different wavelengths interact with different targets, they will produce different damages. effect. For example: evaporative magnetron sputtering coating is heating evaporation coating, aluminum film, etc. Different film systems (such as superhard, wear-resistant, anti-corrosion alloy...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22C30/00C22C32/00
CPCC23C14/3407C23C14/3414C22C30/00C22C32/00
Inventor 雷雨周志宏肖世洪刘芳
Owner 广州市尤特新材料有限公司
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