HEMT chip of silicon carbide-based graphene material and preparation method of HEMT chip

Abstract

The invention discloses an HEMT chip made of a silicon carbide-based graphene material and a preparation method of the HEMT chip. The chip comprises a substrate, a graphene layer, an ion implantation region, an S / D electrode region and a G electrode, the graphene layer is located above the substrate and is connected with the substrate; the ion implantation region is located in the center of the interior of the substrate and penetrates upwards to the upper surface of the graphene layer; the S / D electrode region is positioned above the graphene layer and is connected with the graphene layer; and the G electrode is positioned above the ion implantation region and is connected with the ion implantation region. According to the invention, a graphene material is used as a conductive channel to replace a traditional heterogeneous interface 2DEG, superspeed electron migration and conductive rate are realized, a Schottky barrier in contact with a metal semiconductor is used as a gate power supply to control the on-off of the whole transistor, SiC is used as a substrate material, and growth integration of different materials is realized through a semiconductor process. Therefore, a brand-new transistor with excellent characteristics is formed.

Description

technical field [0001] The invention relates to the technical field of semiconductor electronic information, and more specifically relates to a silicon carbide-based graphene material HEMT chip and a preparation method thereof. Background technique [0002] A general high electron mobility transistor HEMT (or heterojunction field effect transistor HFET, modulation doped field effect transistor MODFET) uses two materials with different energy gaps to form a heterojunction to provide a channel for carriers, like arsenic Gallium chloride and gallium-aluminum arsenide ternary compound semiconductors are optional materials for this device, and various other combinations can be made according to specific applications. The third-generation wide-bandgap semiconductor represented by gallium nitride (GaN), which has been developed in recent years, has a wide bandgap constant, higher electron mobility, strong radiation resistance, good breakdown electric field strength, and high temper...

AI Technical Summary

Problems solved by technology

[0004] At present, traditional HEMTs are based on heterojunction materials. Due to the difficulty of material growth, lattice defects will be caused, which will affect device performance. Especially for the third-generation wide bandgap semiconductors, it is very difficult for AlN / AlGaN / GaN to achieve higher material quality. , affecting device voltage and current characteristics, cut-off frequency and device reliability;

[0005] In addition, although the mobility of 2DEG of traditional high electron mobility devices is already relatively high, its upper limit rate is limited by the material itself and its own transmission characteristics. A breakthrough from the material itself will be a major solution

[0006] In order to achieve high voltage resistance and high mobility, compound semiconductors with large bandgap widths and different materials with large gaps in bandgap must be used, which requires more complicated and refined growth methods, production costs, and material costs, which are not conducive to Batch production limits its larger application scenarios and markets

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