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Thermoelectric-piezoelectric device based on tellurium nanowire vertical structure and manufacturing method

A technology of tellurium nanowires and vertical structures, which is applied in the preparation of directional growth nanomaterials and the preparation of pyroelectric and piezoelectric sensors, can solve the problems of multilayer structure robustness and systemic intrinsic characteristic damage, and complex sensor design, etc., to achieve Overcome the effects of damage to intrinsic characteristics, low manufacturing cost, and simple device structure

Pending Publication Date: 2022-03-18
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for dual sensors, the multi-electrode sensing structure often complicates the sensor design, and the robustness and systematicness of the multi-layer structure are easily damaged due to the intrinsic properties of the materials.

Method used

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  • Thermoelectric-piezoelectric device based on tellurium nanowire vertical structure and manufacturing method
  • Thermoelectric-piezoelectric device based on tellurium nanowire vertical structure and manufacturing method
  • Thermoelectric-piezoelectric device based on tellurium nanowire vertical structure and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] Step 1: Weigh 0.1g of tellurium powder with a purity of 99.99%, put it into a quartz boat, clean a flexible conductive substrate with alcohol for 30 minutes, dry it with an air gun, fix it on a 304 stainless steel sheet, and cover it mask frame. The quartz boat is placed in the heating zone of the tube furnace, and the stainless steel sheet is placed at a distance of 12cm from the quartz boat, which is close to the heat insulation area of ​​the tube furnace.

[0063] Step 2: Turn on the mechanical pump, pump it down to below 10Pa, then turn on the molecular pump, and wait until the molecular pump pumps to 5×10 -4 Below Pa, turn off the molecular pump. When the rotational speed of the molecular pump is zero, the air intake system is turned on, the flow rate is 40 sccm, and the pressure in the furnace is 23 Pa at this time. Keep the pressure in the furnace stable for 30 minutes without turning on the heating system.

[0064] Step 3: Set the heating curve and start the ...

Embodiment 2

[0069] Referring to the steps in Example 1, change the distance between the quartz boat and the stainless steel sheet to 10cm, change the heating rate to 20°C / min, and keep the other parameters the same, then the electronic scanning diagram of the generated vertical tellurium nanowires is as follows: Figure 5 shown.

Embodiment 3

[0070] Example 3: Sensing the temperature change from top to bottom

[0071] Put the thermoelectric-piezoelectric device based on the vertical structure of tellurium nanowires of the present invention on the surface of an object with a temperature difference between the upper and lower sides. One end is a water-cooled or copper radiator, and the upper end is a certain heating object. Due to the high Seebeck coefficient of tellurium, the surface of the sensor The temperature difference is generated on the surface, and the temperature difference voltage is output. Combined with the external acquisition circuit, the temperature change can be obtained and sensed.

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Abstract

The invention belongs to the field of sensor and material preparation, and relates to a thermoelectric-piezoelectric device based on a tellurium nanowire vertical structure and a preparation method, and the method is characterized in that tellurium nanowires with the length of hundreds of nanometers to dozens of micrometers are prepared on a flexible conductive substrate through a physical vapor deposition method, and the length-diameter ratio is controllable. PDMS spin coating is carried out on the flexible conductive substrate on which the tellurium nanowires grow, the spin coating time and the rotating speed are controlled, the tellurium nanowires can be partially coated with PDMS, PDMS is cured on a heating table, a flexible electrode plate is attached to the upper layer of the cured PDMS, and an upper electrode is formed. The vertical structure device has thermoelectric and piezoelectric dual-sensing effects, and compared with traditional piezoelectric and thermoelectric sensors, the dual-integrated device is more suitable for intelligent wearable electronic equipment. And the prepared tellurium nanowire is simple in process method and low in cost, does not need a complex chemical reaction method, has the characteristics of being green and environment-friendly, and can be prepared on a large scale.

Description

technical field [0001] The invention belongs to the technical field of preparation of directional growth nanometer materials and preparation of thermoelectric and piezoelectric sensors, and relates to a thermoelectric-piezoelectric device based on a tellurium nanowire vertical structure and a manufacturing method. Background technique [0002] Tellurium is a non-metallic element with very good heat transfer and electrical conductivity. Among all non-metallic companions, its metallicity is the strongest, with thickness-dependent bandgap, environmental stability, piezoelectric effect, high carrier mobility and photoresponse and many other excellent properties, in photodetectors, Electronic devices such as field effect transistors, thermoelectric devices, piezoelectric devices, modulators and energy harvesters have great potential for application. One-dimensional semiconductor nanowire structures have attracted much attention due to their excellent physical properties and pote...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L41/193H01L41/047B82Y30/00B82Y40/00H10N10/852H10N30/857H10N30/87
CPCB82Y30/00B82Y40/00H10N10/852H10N30/877H10N30/857
Inventor 邰凯平向征赵洋喻海龙胡振清徐明聂鹏程何娟
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI