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Se microtube/bromine-lead-cesium heterojunction and preparation method and photoelectric application thereof

A micron-tube, bromine-lead-cesium technology, applied in the field of Se microtube/bromide-lead-cesium heterojunction and its preparation, can solve the problems of limiting two-dimensional heterojunction research, complex stability, problems, etc., and achieve excellent photoelectric performance , long effective carrier lifetime, and high trap state density

Pending Publication Date: 2022-03-22
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the construction of most two-dimensional PN junctions can only obtain the P-type characteristics of materials through methods such as electric gate control, special metal contact and chemical doping. However, this method is relatively complicated and has stability problems, which to a certain extent limits the study of two-dimensional heterojunctions

Method used

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  • Se microtube/bromine-lead-cesium heterojunction and preparation method and photoelectric application thereof
  • Se microtube/bromine-lead-cesium heterojunction and preparation method and photoelectric application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Example 1: Preparation of SE Micron Tubes / CSPBBRs of 1D-2D P-N Structure 3 Triangular heterojunction

[0025] In the horizontal tubular furnace, high-purity argon (99.99%) as the carrier gas, first take the appropriate amount of SE powder in a clean quartz booon, will be placed in the level of SE powder into the constant temperature of the horizontal tube furnace Area. Then, the acetone, alcohol, deionized water was then cleaned, and the silicon-blown silicon-blown wafer was vertically placed in the quartz tube, and the quartz boat responded to 22cm. The growth temperature is 380 ° C, the growth time is 6 h, and the argon flow is 200cm. 3 / min, after the reaction is completed, stop heating, naturally fell to room temperature, to obtain a large number of SE micron tubes on the silicon wafer. High purity argon (99.999%) as carrier gas, high purity PBBR powder (99.999%) and CSBR 2 (99.999%) As the reactive source placement tubular furnace, a clean flexible polyester fiber s...

Embodiment 2

[0026] Example 2: Preparation of SE Micron Tubes / CSPBBR of 1D-1D P-N Structure 3 Nano-line heterojunction

[0027] In the horizontal tubular furnace, high-purity argon (99.99%) as the carrier gas, first take the appropriate amount of SE powder in a clean quartz booon, will be placed in the level of SE powder into the constant temperature of the horizontal tube furnace Area. Then, the acetone, alcohol, deionized water was then cleaned, and the silicon-blown silicon-blown wafer was vertically placed in the quartz tube, and the quartz boat responded to 22cm. The growth temperature is 380 ° C, the growth time is 6 h, and the argon flow is 200cm. 3 / min, after the reaction is completed, stop heating, naturally fell to room temperature, to obtain a large number of SE micron tubes on the silicon wafer. High purity argon (99.999%) as carrier gas, high purity PBBR powder (99.999%) and CSBR 2 (99.999%) As the reactive source placement tubular furnace, a clean flexible polyester fiber sub...

Embodiment 3

[0028] Example 3: Preparation of 1D-2D P-N Structure SE Micron Tube / CSPBBR3 Square heterojunction

[0029] In the horizontal tubular furnace, high-purity argon (99.99%) as the carrier gas, first take the appropriate amount of SE powder in a clean quartz booon, will be placed in the level of SE powder into the constant temperature of the horizontal tube furnace Area. Then, the acetone, alcohol, deionized water was then cleaned, and the silicon-blown silicon-blown wafer was vertically placed in the quartz tube, and the quartz boat responded to 22cm. The growth temperature is 380 ° C, the growth time is 6 h, and the argon flow is 200cm. 3 / min, after the reaction is completed, stop heating, naturally fell to room temperature, to obtain a large number of SE micron tubes on the silicon wafer. High purity argon (99.999%) as carrier gas, high purity PBBR powder (99.999%) and CSBR 2 (99.999%) As the reactive source placement tubular furnace, a clean flexible polyester fiber substrate c...

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PUM

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Abstract

The invention belongs to a Se microtube / bromine-lead-cesium heterojunction and a preparation method and photoelectric application thereof, and belongs to the technical field of semiconductor nanomaterials. According to the method, Se powder is used as a precursor, a length-controllable Se microtube is prepared through a chemical vapor deposition method, a Se microtube / bromine-lead-cesium heterojunction is prepared on a flexible substrate through the chemical vapor deposition method, and the Se microtube / bromine-lead-cesium heterojunction is obtained by adjusting a band gap through the thickness of bromine-lead-cesium. The Se microtube / bromine-lead-cesium heterojunction provided by the invention has higher quality in the application of a photoelectric detector.

Description

Technical field [0001] The present invention belongs to the technical field of semiconductor nanomaterials, in particular, refers to a SE micron tube / bromine-free heterojunction and a preparation method thereof and photoelectric applications. Background technique [0002] Photodel detectors have application needs in many fields, such as space exploration, biological analysis, environment sensing, communication, and imaging. The ideal photodetector typically desires high sensitivity, high detection rate, rapid response speed, high spectral selectivity, and high stability. The semiconductor material is an important part of the photodetector. Many semiconductor materials have been applied to photodetectors, including silicon, carbon nanotubes, III-V compounds, quantum points, etc., and in terms of improved photodetection performance and device structural design. Significant progress has been made. However, photoelectric detectors based on this conventional rigid silicon substrate ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/109C23C16/30C23C16/28
CPCH01L31/109H01L31/18C23C16/28C23C16/30Y02P70/50
Inventor 于平平段伟杜青阳姜岩峰
Owner JIANGNAN UNIV
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