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CuI/ZTO heterojunction ultraviolet detector and preparation method thereof

An ultraviolet detector and heterojunction technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of high binding energy, low cost, adverse effects on photoresponse performance, etc. Simple structure and the effect of improving visible light transmittance

Active Publication Date: 2022-03-25
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For n-type semiconductor materials, zinc oxide has the characteristics of wide band gap, large binding energy, and low cost, and is widely used in ultraviolet photodetection structures. However, there are often a large number of defect states in pure zinc oxide materials, which are detrimental to the photoresponse performance. influences

Method used

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  • CuI/ZTO heterojunction ultraviolet detector and preparation method thereof
  • CuI/ZTO heterojunction ultraviolet detector and preparation method thereof
  • CuI/ZTO heterojunction ultraviolet detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 1) Use acetone, ethanol and deionized water to ultrasonically clean the ITO conductive glass for 15 minutes respectively. After cleaning, dry the moisture remaining on the substrate surface with nitrogen gas, and put the cleaned ITO conductive glass into a plasma cleaner for 15 minutes. , to remove impurities and oxygen adsorption on the substrate surface, and complete the pretreatment of the substrate.

[0036] 2) Fix the ZTO target with a purity of 99.99% on the target stage in the chamber, fix the cleaned ITO substrate on the sample stage, separate the target from the substrate with a baffle, and adjust the target to the substrate The bottom distance is 6.0 cm. Close the chamber door and leak valve in sequence, turn on the mechanical pump and the molecular pump in sequence, and after about 2 hours, the required 10 -5 Pa vacuum. In the vacuum chamber, O 2 , Adjust the flowmeter to keep the air pressure in the chamber at 6Pa. Turn on the laser and adjust the laser ...

Embodiment 2

[0042] 1) Use acetone, ethanol and deionized water to ultrasonically clean the ITO conductive glass for 15 minutes respectively. After cleaning, dry the moisture remaining on the substrate surface with nitrogen gas, and put the cleaned ITO conductive glass into a plasma cleaner for 10 minutes. , to remove impurities and oxygen adsorption on the substrate surface, and complete the pretreatment of the substrate.

[0043] 2) Fix the ZTO target with a purity of 99.99% on the target stage in the chamber, fix the cleaned ITO substrate on the sample stage, separate the target from the substrate with a baffle, and adjust the target to the substrate The bottom distance is 6.0 cm. Close the chamber door and leak valve in sequence, turn on the mechanical pump and the molecular pump in sequence, and after about 2 hours, the required 10 -5 Pa vacuum. In the vacuum chamber, O 2 , Adjust the flowmeter to keep the air pressure in the chamber at 6Pa. Turn on the laser and adjust the laser ...

Embodiment 3

[0049] 1) Use acetone, ethanol and deionized water to ultrasonically clean the ITO conductive glass for 15 minutes respectively. After cleaning, dry the moisture remaining on the substrate surface with nitrogen gas, and put the cleaned ITO conductive glass into a plasma cleaner for 15 minutes. , to remove impurities and oxygen adsorption on the substrate surface, and complete the pretreatment of the substrate.

[0050] 2) Fix the ZTO target with a purity of 99.99% on the target stage in the chamber, fix the cleaned ITO substrate on the sample stage, separate the target from the substrate with a baffle, and adjust the target to the substrate The bottom distance is 6.0 cm. Close the chamber door and leak valve in sequence, turn on the mechanical pump and the molecular pump in sequence, and after about 2 hours, the required 10 -5 Pa vacuum. In the vacuum chamber, O 2 , Adjust the flowmeter to keep the air pressure in the chamber at 6Pa. Turn on the laser and adjust the laser ...

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Abstract

The invention discloses a CuI / ZTO heterojunction ultraviolet detector and a preparation method thereof, the ultraviolet detector sequentially comprises ITO conductive glass, a ZnSnO (ZTO) layer and a CuI layer from bottom to top, and Au electrodes are prepared on the ITO conductive glass and the CuI layer. The preparation method comprises the following steps: preparing a ZTO thin film on ITO conductive glass by adopting a pulsed laser deposition (PLD) method, spin-coating a prepared CuI precursor solution on the ZTO thin film for multiple times, annealing, and plating Au on the surfaces of CuI and ITO by electron beam evaporation to serve as electrodes, thereby completing the preparation of the ultraviolet detector. Compared with a traditional ultraviolet detector, the ultraviolet detector prepared by the method can realize high switch ratio and high response speed under zero bias voltage, is simple in structure and low in preparation cost, and has important application value in military, civil and some special fields.

Description

technical field [0001] The invention relates to an ultraviolet detector and a preparation method thereof, in particular to a CuI / ZTO heterojunction ultraviolet band detector and a preparation method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] Ultraviolet detection technology is a new type of military-civilian dual-use technology developed after infrared detection technology and laser technology. It has important application value in the fields of environmental and biological monitoring, spectral analysis, flame warning, and space communication. At present, the mainstream detector structure on the market is based on the p-n junction photodiode, which can use the built-in electric field to achieve self-driving performance under zero bias, obtain light-weight, energy-saving optoelectronic devices, and effectively reduce the dark current of the device , Improve device response speed. [0003] Traditional p-type semiconductor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/032H01L31/0376H01L31/109H01L31/20
CPCH01L31/109H01L31/20H01L31/0376H01L31/02963H01L31/032Y02P70/50
Inventor 潘新花刘云泽叶志镇
Owner ZHEJIANG UNIV