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Fluorine-free cleaning agent as well as preparation method and application thereof

A cleaning agent and water-based cleaning agent technology, applied in detergent compounding agents, detergent compositions, chemical instruments and methods, etc., can solve the problems of difficult to remove by-products, long cleaning time, wafer defects, etc., to reduce cleaning High temperature, high cleaning time, and improved weather resistance

Active Publication Date: 2022-04-12
TAN KAH KEE INNOVATION LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, fluorine-containing cleaning agents have the advantage of strong residue removal ability, but the existence of fluorine-containing compounds has a high risk of substrate corrosion, and the use of fluorine-containing cleaning agents is likely to cause wafer defects.
At the same time, in actual production, it is also found that after using a fluorine-containing cleaning agent, the wafer has the problem of poor weather resistance. This is because the surface of the wafer often remains after cleaning. Further reaction with the wafer substrate produces by-products such as aluminum fluoride, which are difficult to remove, resulting in reduced yield and some related chip quality issues
In addition, fluorine-containing cleaning agents have higher requirements for production safety and machine equipment, which has led to an increase in production costs to a certain extent
[0005] At present, many manufacturers have also developed fluorine-free cleaning agents, but the existing fluorine-free cleaning agents have disadvantages such as long cleaning time, high operating temperature, poor residue removal ability, and short service life, which cannot be applied to etching residues after multiple processes Removal of matter

Method used

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  • Fluorine-free cleaning agent as well as preparation method and application thereof
  • Fluorine-free cleaning agent as well as preparation method and application thereof
  • Fluorine-free cleaning agent as well as preparation method and application thereof

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preparation example Construction

[0053] The present invention also provides a preparation method of the above-mentioned fluorine-free cleaning agent, comprising: mixing water, an organic solvent, an amine compound with one or more of corrosion inhibitors, acids and alcohol compounds to obtain a fluorine-free cleaning agent agent.

[0054] The present invention has no special limitation on the sources of all raw materials, which can be commercially available. The water, organic solvents, amine compounds and corrosion inhibitors are all the same as those described above, and will not be repeated here.

[0055] The present invention also provides a kind of application of the above-mentioned fluorine-free cleaning agent in the integrated circuits including but not limited to the semiconductor field; further preferably, the application in cleaning after the semiconductor etching process; the semiconductor etching process can be metal Etching, dielectric material etching, and etching of inorganic media such as sil...

Embodiment 1

[0063] Containing 15wt% monoethanolamine, 15wt% diethylene glycol monobutyl ether, 1wt% D-sorbitol, 1wt% benzotriazole, 2wt% ethylene glycol and the rest of ultrapure water, the total amount of each chemical reagent is 100g, and add to the beaker one by one and shake well. Among them, the solid reagent can be weighed first, and then dissolved by adding a solvent.

Embodiment 2

[0065]Containing 25wt% monoethanolamine, 15wt% diethylene glycol monobutyl ether, 1wt% D-sorbitol, 1wt% benzotriazole, 2wt% ethylene glycol and the rest of ultrapure water, the total amount of each chemical reagent is 100g, and add to the beaker one by one and shake well. Among them, the solid reagent can be weighed first, and then dissolved by adding a solvent.

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Abstract

The invention provides a fluoride-free cleaning agent. The fluoride-free cleaning agent is a water-based cleaning agent; the fluoride-free cleaning agent comprises water, an organic solvent and an amine compound, the mass of the organic solvent is 15-85% of the mass of the fluoride-free cleaning agent; the mass of the amine compound is 5-50% of the mass of the fluoride-free cleaning agent; the corrosion inhibitor further comprises one or more of a corrosion inhibitor, an acid and an alcohol compound. Compared with the prior art, the fluoride-free cleaning agent provided by the invention also has better cleaning capacity under the condition of not containing fluorine element through the synergistic effect of the specific amine compound and one or more of the corrosion inhibitor, the acid and the alcohol, and meanwhile, the corrosion of the cleaning agent to metal can be reduced, the damage to a substrate medium is prevented, and the service life of the cleaning agent is prolonged. And the weather resistance of the cleaned wafer is improved. Compared with existing similar products, the fluoride-free cleaning agent provided by the invention has the obvious advantages that the cleaning temperature is reduced, the cleaning time is shortened, the cost performance is higher, and the like.

Description

technical field [0001] The invention belongs to the technical field of electronic industry, and in particular relates to a fluorine-free cleaning agent, its preparation method and application. Background technique [0002] Integrated circuit chip manufacturing is a key link in the downstream of the semiconductor industry chain. With the gradual shrinking of the critical dimensions of integrated circuits, the industry has higher and higher requirements for chip manufacturing processes. Among them, after all kinds of materials on the wafer are etched or ashed, the residues after etching on the wafer surface are removed, which is the key technology to keep the follow-up process stable and ensure the performance, yield and reliability of the finished chip. [0003] Etching is an important process for transferring patterns to metal or dielectric layers such as aluminum, silicon dioxide, and silicon nitride after photoresist development. After patterning is introduced, a large am...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/22C11D1/74C11D3/04C11D3/20C11D3/22C11D3/26C11D3/28C11D3/30C11D3/32C11D3/34C11D3/60C11D7/08C11D7/26C11D7/32C11D7/50C11D7/60H01L21/02
CPCC11D7/3218C11D7/263C11D7/261C11D7/3281C11D7/08C11D7/3209H01L21/02057
Inventor 张爱强陈婷马克·奈舍卢聪杰罗松松赖委舜
Owner TAN KAH KEE INNOVATION LAB
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