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Preparation method of microwave thin film integrated circuit

A microwave thin film and integrated circuit technology, applied in the manufacture of circuits, electrical components, semiconductors/solid devices, etc., can solve the problems of copper etching layer corrosion penetration, reduce circuit adhesion, process limitations, etc., to overcome circuit adhesion , broaden the applicability, the effect of wide applicability

Pending Publication Date: 2022-04-12
CHENGDU YAGUANG ELECTRONICS
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0005] There are currently several limitations in the way of electroplating to form a graphic anti-etching layer: ①During the electroplating process with glue, there will be electroplating gold penetration due to environmental electroplating solutions and other problems, which will lead to the scrapping of the substrate
②Because the etching gold solution will react slowly to the anti-etching layer such as copper, the thickness of the patterned copper plating directly affects the etching effect, which often leads to the phenomenon of corrosion penetration of the copper etching layer
④Due to the high stress of electroplated copper and other metals, electroplating on the gold layer will greatly reduce the adhesion of the circuit, and it is not suitable for metallization on polished ceramic substrates
⑤Because it is necessary to remove the anti-etching layer on the surface, an etching solution capable of corroding copper must be used, and the etching solution for copper will cause damage to the nickel film. Therefore, the process of using electroplating copper as an anti-etching layer is limited to TaN / TiW / Au This composite film is not suitable for Ni-containing composite films of TaN / TiW / Ni / Au or TiW / Ni / Au, or other influential composite film structures
To sum up, although the etching of copper as an anti-etching layer can meet some production requirements, due to process limitations, production control is more difficult and the process breadth is not high.

Method used

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  • Preparation method of microwave thin film integrated circuit
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  • Preparation method of microwave thin film integrated circuit

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preparation example Construction

[0058] The invention provides a method for preparing a microwave thin film integrated circuit, comprising the following steps:

[0059] S1. Carry out metallization treatment on the surface of the ceramic substrate to form a metal composite film layer;

[0060] In the metal composite film layer, the bottom layer is in contact with the surface of the ceramic substrate, and the surface layer is away from the ceramic substrate;

[0061] The surface layer of the metal composite film layer is an Au film layer;

[0062] S2. Attach photoresist on the surface of the metal composite film layer, and remove the photoresist in the circuit pattern area to expose the metal composite film layer in the circuit pattern area, and keep the photoresist in the non-circuit pattern area;

[0063] S3, electroplate the circuit board obtained in step S2, and form a gold-plated layer on the surface of the metal composite film layer exposed in the circuit pattern area;

[0064] S4. Carry out vacuum sput...

Embodiment 1

[0118] S1, with polishing 99 alumina as ceramic substrate 101 (thickness is 0.381mm), first remove the pollutant on the surface of ceramic substrate 101 with cleaning agent, then, utilize vacuum sputtering again on the surface of ceramic substrate 101 (comprising the front and the back) sequentially form a TaN layer-TiW layer-Ni layer-Au layer to obtain a metal composite film layer.

[0119] see figure 2 , wherein 101 is a ceramic substrate, 102-105 are metal composite film layers, 102 is a TaN layer, 103 is a TiW layer, 104 is a Ni layer, and 105 is an Au layer. In 102 to 105, the thickness of each layer is 0.3 μm.

[0120] S2, with AZP4620 type positive photoresist: the solution of acetone=1mL: 10mL is photoresist solution, this photoresist solution is sprayed on the metal composite film layer surface of ceramic substrate front, spray glue temperature is 85 ℃, spray The flow rate of the glue is 1.2mL / min, the number of times of glue spraying is 4 times, and then baked at ...

Embodiment 2

[0129] S1-S3: same as embodiment 1. Afterwards, the obtained circuit board was placed in an environment with a humidity of 75% and a temperature of 28° C. for 10 minutes.

[0130] S4, electroplating with glue: specifically operate according to step S4 in embodiment 1, the result is as follows Figure 10 as shown, Figure 10 It is a schematic structural diagram of the circuit after step S4 in Example 2; wherein, 109 is the part of gold infiltration, that is, the infiltration and plating phenomenon has occurred.

[0131] S5, sputtering anti-etching TiW mask protective layer 108: specifically operate according to step S5 in Example 1, the result is as follows Figure 11 as shown, Figure 11 It is a schematic structural diagram of the circuit processed in step S5 in embodiment 2. It can be seen that the anti-etching TiW mask protection layer is not formed in the non-pattern area, and there is no mask layer on the surface of the gold-infiltrated part; it can be seen that the pr...

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Abstract

The invention provides a preparation method of a microwave thin film integrated circuit, which comprises the following steps of: after metallization treatment, attaching photoresist, selectively removing the photoresist to form a circuit pattern, selectively electroplating gold, and preparing an anti-etching TiW mask protective layer by utilizing a vacuum sputtering mode. And well removing the anti-etching metal mask protection layer in the non-pattern area by using a photoresist stripping process, and then sequentially removing other film layers according to a certain sequence, thereby obtaining the microwave thin film integrated circuit board. The preparation method provided by the invention can be used for the composite film containing the Ni layer, breaks through the limitation of the prior art, and is wider in applicability. Moreover, even if the electroplating gold seepage phenomenon occurs in the adhesive electroplating process, the qualified thin film circuit can be prepared by utilizing the preparation method disclosed by the invention. Meanwhile, according to the preparation method, the adhesiveness can be improved, and the problem that electroplating on a gold layer can reduce the adhesive force of a circuit and is not suitable for metallizing the polished ceramic substrate is solved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for preparing a microwave thin film integrated circuit. Background technique [0002] Compared with other types of circuits, microwave thin film circuits have the advantages of high interconnection density and high line precision. They can realize passive components such as small hole metallization, integrated resistors, capacitors and inductors, and manufacture high-power circuits. The entire packaging structure has With outstanding features such as system-level functions, it is widely used in microwave and millimeter wave circuits in the fields of communication and aerospace, and is a very potential microwave circuit substrate technology. [0003] Thin-film circuit substrates are passive components such as thin-film resistors, inductors, metallized holes, and interconnecting conductors prepared on substrate materials such as glass / ceramics by vacuum evaporation, sputterin...

Claims

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Application Information

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IPC IPC(8): H01L21/768C23C14/18C23C14/34C23F1/02C23F1/14C23F1/26C23F1/28C25D5/02C25D5/54
Inventor 程吉霖刘旭卢超聂源
Owner CHENGDU YAGUANG ELECTRONICS
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